JPS63181313A - Vapor phase crystal growth equipment - Google Patents

Vapor phase crystal growth equipment

Info

Publication number
JPS63181313A
JPS63181313A JP1277187A JP1277187A JPS63181313A JP S63181313 A JPS63181313 A JP S63181313A JP 1277187 A JP1277187 A JP 1277187A JP 1277187 A JP1277187 A JP 1277187A JP S63181313 A JPS63181313 A JP S63181313A
Authority
JP
Japan
Prior art keywords
tube
thermal expansion
adhered
coefficient
material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1277187A
Inventor
Yoichiro Ota
Tetsuya Yagi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1277187A priority Critical patent/JPS63181313A/en
Publication of JPS63181313A publication Critical patent/JPS63181313A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enable easily separating a reaction product by providing an adhered material separating tube made of a material which has the very small coefficient of thermal expansion and which makes a reaction product adhered inside a reaction tube easily separate at the time of crystal growth or by providing the reaction tube made of the adhered material separating tube.
CONSTITUTION: An adhered material separating tube 7 made of a material which has the smaller than that of quartz glass or almost zero coefficient of thermal expansion is provided inside a reaction tube 1. For the quality of the material for such an adhered material separating tube 7, β-quartz solid solution type crystallized glass is mentioned as an example. The coefficient of thermal expansion of the crystallized glass is (-3W0)×10-7 °C-1 at 30W380°C, (0W4)×10-7°C-1 at 30W800°C and is smaller than that of the quartz glass. For example, when GaAs crystal is grown by using this equipment, if the GaAs is assumed to be deposited on the wall of the tube, the coefficient of thermal expansion of the tube is approx. 66×10-7°C-1 and if the wall of the tube is cooled rapidly, the adhered GaAs is almost all separated from the wall of the tube by the difference of the coefficient of thermal expansion. This enables separating a reaction product automatically.
COPYRIGHT: (C)1988,JPO&Japio
JP1277187A 1987-01-22 1987-01-22 Vapor phase crystal growth equipment Pending JPS63181313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1277187A JPS63181313A (en) 1987-01-22 1987-01-22 Vapor phase crystal growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1277187A JPS63181313A (en) 1987-01-22 1987-01-22 Vapor phase crystal growth equipment

Publications (1)

Publication Number Publication Date
JPS63181313A true JPS63181313A (en) 1988-07-26

Family

ID=11814666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1277187A Pending JPS63181313A (en) 1987-01-22 1987-01-22 Vapor phase crystal growth equipment

Country Status (1)

Country Link
JP (1) JPS63181313A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547512A (en) * 1989-07-21 1996-08-20 Minnesota Mining And Manufacturing Company Continuous atomspheric pressure CVD coating of fibers
WO2005029566A1 (en) * 2003-09-19 2005-03-31 Hitachi Kokusai Electric Inc. Process for producing semiconductor device and substrate treating apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5547512A (en) * 1989-07-21 1996-08-20 Minnesota Mining And Manufacturing Company Continuous atomspheric pressure CVD coating of fibers
WO2005029566A1 (en) * 2003-09-19 2005-03-31 Hitachi Kokusai Electric Inc. Process for producing semiconductor device and substrate treating apparatus
US7955991B2 (en) 2003-09-19 2011-06-07 Hitachi Kokussai Electric Inc. Producing method of a semiconductor device using CVD processing
US8231731B2 (en) 2003-09-19 2012-07-31 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US8636882B2 (en) 2003-09-19 2014-01-28 Hitachi Kokusai Electric Inc. Producing method of semiconductor device and substrate processing apparatus

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