JPS63169729A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS63169729A JPS63169729A JP221587A JP221587A JPS63169729A JP S63169729 A JPS63169729 A JP S63169729A JP 221587 A JP221587 A JP 221587A JP 221587 A JP221587 A JP 221587A JP S63169729 A JPS63169729 A JP S63169729A
- Authority
- JP
- Japan
- Prior art keywords
- block
- wafer
- blocks
- temperature
- wafer holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 8
- 235000012431 wafers Nutrition 0.000 claims 5
- 238000005530 etching Methods 0.000 abstract description 11
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔座業上の利用分野〕
本発明に、液体に用いないでエツチングを行うドライエ
ツチング装置、爵にエツチングすべきウェーハを加熱保
持するウェーハホルダに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of practical application] The present invention relates to a dry etching apparatus that performs etching without using a liquid, and a wafer holder that heats and holds a wafer to be etched.
第3図(mlは従来のドライエツチング装置のウェーハ
ホルダにウェーハ葡保持させ友平面図、同凶(b)は同
図(a)のA−A断面図である。第3図(a) 、 (
blにおいて、ウェーハホルダ1711mのウェーハ1
0を保持し、このウェーハ葡所望の測温に保つためのホ
ルダ本体部6と、この本体部6に備壌バイア゛2ヶ通し
て接続され1本体内部に熱交換剤勿通して加熱する温度
コントローラ7とからできている〇〔発明がS決しよう
とする間鴨点〕
上述のとおり、従来のドライエツチング装置のウェーハ
ホルダに、1個のウェーハを保持し、かつ、このホルダ
営均−な温度に保つように温純コントローラでもって制
御していた。しかし、ドライエツチング装置では、7ラ
ズマ発生用の1憾構造に基いて、ウェーハ面内において
エツチング込度の不均一【生じ、エツチング形状か不均
一になるため、所望のエツチング形状が得られないとい
う欠点があり九〇
〔問題点1#大するための手段〕
上記問題点に対し本発明では、エツチング速度はウェー
ハ温度の関数であることから、エツチング速度の遅いウ
ェーハの領域は温度を高くシ、エツチング速度の速い領
域に温度音像くするように温度側#を行うのである。そ
の丸め、ウェーハホルダを少くとも21161のブロッ
クに分け、各ブロックには独立に温度制御できる温度コ
ントローラを設ける0よって、電極構造に基づくウエー
ノS面内の速度の不拘−t%ブロック間の温度差でもっ
て吸収させ、ウェーハ面内でのエツチング速度【均一に
している。FIG. 3 (ml is a plan view of a wafer held by a wafer holder of a conventional dry etching apparatus, and FIG. 3(b) is a sectional view taken along line A-A in FIG. 3(a). FIG. 3(a), (
In bl, wafer 1 of wafer holder 1711m
A holder main body part 6 is used to maintain the temperature of the wafer at the desired temperature, and a holder main body part 6 is connected to the main body part 6 through two vias. 〇 [The point where the invention is about to be decided] As mentioned above, one wafer is held in the wafer holder of the conventional dry etching equipment, and this holder is It was controlled by a warm controller to maintain the temperature. However, with dry etching equipment, the etching depth is non-uniform within the wafer surface based on the structure for generating lasma, and the etching shape becomes non-uniform, making it difficult to obtain the desired etching shape. There are 90 drawbacks [Means to increase problem 1#] To solve the above problem, in the present invention, since the etching rate is a function of the wafer temperature, the area of the wafer where the etching rate is slow is raised to a high temperature. The temperature side # is performed so that the temperature sound image is placed in the area where the etching rate is high. For rounding, the wafer holder is divided into at least 21161 blocks, and each block is provided with a temperature controller that can independently control the temperature. Therefore, the speed in the wafer S plane based on the electrode structure is independent - t% temperature difference between blocks. This makes the etching rate uniform within the wafer surface.
つぎに本発明を実施例により睨−する〇第1図(a)に
本発明の一実施例に係るウェーノ・ホルダの平面凶、同
図(b)H同図(a)のA−A断面図である。これらの
図において、ウェーハホルダ本体部は%2重の同心円に
よって、円形の中央ブロックla、その外側の環状の中
間ブロックlb、さらにその外側の外側ブロック1cの
3個のブロックに分けられ、中央ブロック1m、中間ブ
ロックlb、および外側ブロック1cのそれぞれには。Next, the present invention will be examined with reference to embodiments. Fig. 1(a) shows a plane view of a wafer holder according to an embodiment of the present invention, and Fig. 1(b) shows a cross section taken along line A-A in Fig. 1(a). It is a diagram. In these figures, the wafer holder main body is divided into three blocks by double concentric circles: a circular central block la, an annular intermediate block lb outside the central block la, and an outer block 1c outside the central block la. 1m, each of the intermediate block lb and the outer block 1c.
温度コントローラ3が付設され%循環パイプ2を通して
各ブl:l #/りに熱交換剤ケ循積させ、各ブロック
の温度を独立に制御するO
第2図(a) 、 (b)は不発ゆjの他の実施例に係
るウェーハホルダの平面1りと断面図である。第27(
a)。A temperature controller 3 is attached, and a heat exchange agent is circulated and accumulated in each block through a circulation pipe 2, and the temperature of each block is controlled independently. FIG. 7 is a plan view and a cross-sectional view of a wafer holder according to another embodiment of the invention. 27th (
a).
(b)において、不例のウェーハホルダ本体部は、第1
図の例と同様に311のブロックに分けられているが1
円形の中央ブロック4aはホルダ外形の円の中心よシず
れた位置にtoD%その外側に同心環状の中間ブロック
4bがあり、さらにその外側の領域全部を占める外側ブ
ロック4Cとなっている〇しかして、各ブロックに會ユ
それぞれ、独立に色度制御可能なIa!:Jントローラ
3が熱交換循環パイプ2で嶺絖されており、誤1図の例
における電憧(A遺と違った電極構造に対応して、ウェ
ーへ面内エツチング速に’e均一化する。In (b), the anomalous wafer holder main body is the first
As in the example in the figure, it is divided into 311 blocks, but 1
The circular central block 4a has a concentric annular intermediate block 4b outside it at a position offset from the center of the circle of the holder outline, and an outer block 4C that occupies the entire outer area. , chromaticity can be controlled independently for each block. :The J controller 3 is connected to the heat exchange circulation pipe 2, and the electric conduction in the example in Figure 1 is incorrect (corresponding to the electrode structure different from A), the in-plane etching speed is made uniform across the wafer. .
嬉1凶(a)μ本発明の一実施例に係るウェーハホルダ
の平面1.同凶(b)#二同図(ωのA−A断面図。
第2(9)(ω)言勧呼中−−一本発明の他の実施例に
係るウェーハホルダの平面図、同図(b)#:r同肉(
mlのA−入断面図、第3図(a) 、 (b)+!従
来のドライエツチング装置に係るウェーハホルダの平面
図と断面図である0
1 & e 4 a・・・・・・中央ブロック、lb、
4b・・・・・・中間ブロックs lc、46・・・・
・・外側ブロック、2・・・・・・熱交換剤循環パイプ
、3,7・・・・・・温度コントローラ、6・・・・・
・ホルダ本体W、10・・・・・・ウェーハ。
第 1図
消20Advantages and disadvantages (a) μ Plane of wafer holder according to an embodiment of the present invention 1. Same figure (b) #2 Same figure (A-A cross-sectional view of ω. 2nd (9) (ω) Recommendation--1 Plan view of a wafer holder according to another embodiment of the present invention, same figure (b) #: r same meat (
ml A- cross-sectional view, Figure 3 (a), (b) +! 0 1 & e 4 a . . . center block, lb, which are a plan view and a sectional view of a wafer holder related to a conventional dry etching apparatus
4b... Intermediate block s lc, 46...
...Outer block, 2...Heat exchange agent circulation pipe, 3,7...Temperature controller, 6...
・Holder body W, 10...Wafer. Figure 1 erased 20
Claims (1)
ホルダを備えたドライエッチング装置において、前記ウ
ェーハホルダ本体部は、前記ウェーハの一枚を保持する
領域が少くとも2個のブロックに分けられ、前記各ブロ
ックには独立に温度制御できる温度コントローラが付設
されていることを特徴とするドライエッチング装置。In a dry etching apparatus equipped with a wafer holder that holds and heats a wafer to be etched, the wafer holder main body has an area for holding one wafer divided into at least two blocks, and a region for holding one of the wafers is divided into at least two blocks. is a dry etching device characterized by being equipped with a temperature controller that can independently control the temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP221587A JPS63169729A (en) | 1987-01-07 | 1987-01-07 | Dry etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP221587A JPS63169729A (en) | 1987-01-07 | 1987-01-07 | Dry etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63169729A true JPS63169729A (en) | 1988-07-13 |
Family
ID=11523130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP221587A Pending JPS63169729A (en) | 1987-01-07 | 1987-01-07 | Dry etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63169729A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03290928A (en) * | 1990-04-06 | 1991-12-20 | Fuji Electric Co Ltd | Method for processing |
US5766498A (en) * | 1992-11-19 | 1998-06-16 | Hitachi, Ltd. | Anisotropic etching method and apparatus |
-
1987
- 1987-01-07 JP JP221587A patent/JPS63169729A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03290928A (en) * | 1990-04-06 | 1991-12-20 | Fuji Electric Co Ltd | Method for processing |
US5766498A (en) * | 1992-11-19 | 1998-06-16 | Hitachi, Ltd. | Anisotropic etching method and apparatus |
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