JPS63166220A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS63166220A
JPS63166220A JP31534886A JP31534886A JPS63166220A JP S63166220 A JPS63166220 A JP S63166220A JP 31534886 A JP31534886 A JP 31534886A JP 31534886 A JP31534886 A JP 31534886A JP S63166220 A JPS63166220 A JP S63166220A
Authority
JP
Japan
Prior art keywords
substrate
formed
thin film
temperature
asf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP31534886A
Other versions
JPH07120635B2 (en
Inventor
Hitoshi Ito
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61315348A priority Critical patent/JPH07120635B2/en
Publication of JPS63166220A publication Critical patent/JPS63166220A/en
Publication of JPH07120635B2 publication Critical patent/JPH07120635B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To form, with excellent controllability, an impurity diffusion layer whose surface concentration is sufficiently high, and whose junction depth is sufficiently shallow, and increase the density and the degree of integration of elements, by applying a thin film of arsenic, boron, phosphorus, etc., formed by chemical vapor growth to a diffusion source of solid phase diffusion.
CONSTITUTION: A substrate 13 to be treated in which an SiO2 film 22 for element insolation is formed on a semiconductor substrate 21 is mounted on the substrate holder 12 of a CVD equipment. In this state, Ar or N2 is introduced into a vessel 11, and the substrate temperature is set as a specified value. Then H2 gas is made to flow in the vessel 11, and a specified amount of AsF3 gas is made to flow after the temperature is stabilized. AsF3 is reduced by Si atoms of the substrate or hydrogen, and, as the result of this, a thin film 23 of As is formed only on the silicon surface. The substrate, on the silicon surface of which an As thin film 23 is formed, is subjected to flash annealing in an atmosphere of, for example, N2, and an As diffusion layer 24 can be formed thereby. Introduction quantity of As can be set with sufficient controllability, according to the thickness of the thin film 23, the temperature of flash annealing, etc.
COPYRIGHT: (C)1988,JPO&Japio
JP61315348A 1986-12-26 1986-12-26 A method of manufacturing a semiconductor device Expired - Lifetime JPH07120635B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61315348A JPH07120635B2 (en) 1986-12-26 1986-12-26 A method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61315348A JPH07120635B2 (en) 1986-12-26 1986-12-26 A method of manufacturing a semiconductor device

Publications (2)

Publication Number Publication Date
JPS63166220A true JPS63166220A (en) 1988-07-09
JPH07120635B2 JPH07120635B2 (en) 1995-12-20

Family

ID=18064331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61315348A Expired - Lifetime JPH07120635B2 (en) 1986-12-26 1986-12-26 A method of manufacturing a semiconductor device

Country Status (1)

Country Link
JP (1) JPH07120635B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0413982A1 (en) * 1989-07-27 1991-02-27 Junichi Nishizawa Impurity doping method with adsorbed diffusion source
JPH0391932A (en) * 1989-09-04 1991-04-17 Canon Inc Manufacture of semiconductor device
EP0430275A2 (en) * 1989-12-01 1991-06-05 Seiko Instruments Inc. Doping method of barrier region in semiconductor device
EP0430166A2 (en) * 1989-12-01 1991-06-05 Seiko Instruments Inc. Method of doping impurity into semiconductor films and patterned semiconductor strip
JPH03256368A (en) * 1990-03-06 1991-11-15 Seiko Instr Inc Photoelectric-conversion semiconductor device and its manufacture
US5124272A (en) * 1989-08-11 1992-06-23 Seiko Instruments, Inc. Method of producing field effect transistor
US5310698A (en) * 1990-12-21 1994-05-10 Siemens Aktiengesellschaft Process for producing an arsenic-doped smooth polycrystalline silicon layer for very large scale integrated circuits
US5366922A (en) * 1989-12-06 1994-11-22 Seiko Instruments Inc. Method for producing CMOS transistor
US5491107A (en) * 1993-01-21 1996-02-13 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US5514620A (en) * 1989-12-01 1996-05-07 Seiko Instruments Inc. Method of producing PN junction device
US5532185A (en) * 1991-03-27 1996-07-02 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
US5753530A (en) * 1992-04-21 1998-05-19 Seiko Instruments, Inc. Impurity doping method with diffusion source of boron-silicide film
US5792700A (en) * 1996-05-31 1998-08-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US5851909A (en) * 1989-08-11 1998-12-22 Seiko Instruments Inc. Method of producing semiconductor device using an adsorption layer
US5874352A (en) * 1989-12-06 1999-02-23 Sieko Instruments Inc. Method of producing MIS transistors having a gate electrode of matched conductivity type
US5925574A (en) * 1989-12-01 1999-07-20 Seiko Instruments Inc. Method of producing a bipolar transistor
WO2010003928A2 (en) * 2008-07-06 2010-01-14 Interuniversitair Microelektronica Centrum Vzw (Imec) Method for doping semiconductor structures and the semiconductor device thereof
US8906792B2 (en) 2012-04-27 2014-12-09 Tokyo Electron Limited Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533171A (en) * 1976-06-30 1978-01-12 Nec Corp Impurity diffusion method
JPS5961183A (en) * 1982-09-30 1984-04-07 Seiko Epson Corp Thin-film transistor and its manufacture
JPS60138974A (en) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd Manufacture of insulated gate type field effect transistor
JPS61145827A (en) * 1984-12-20 1986-07-03 Sanyo Electric Co Ltd Selective diffusion method
JPS61156858A (en) * 1984-12-28 1986-07-16 Nec Corp Manufacture of cmos fet
JPS61185922A (en) * 1985-02-13 1986-08-19 Nec Corp Phosphorus doping method
JPS61248276A (en) * 1985-04-26 1986-11-05 Nec Corp Cleaning mechanism of floppy disk

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS533171A (en) * 1976-06-30 1978-01-12 Nec Corp Impurity diffusion method
JPS5961183A (en) * 1982-09-30 1984-04-07 Seiko Epson Corp Thin-film transistor and its manufacture
JPS60138974A (en) * 1983-12-27 1985-07-23 Fuji Electric Corp Res & Dev Ltd Manufacture of insulated gate type field effect transistor
JPS61145827A (en) * 1984-12-20 1986-07-03 Sanyo Electric Co Ltd Selective diffusion method
JPS61156858A (en) * 1984-12-28 1986-07-16 Nec Corp Manufacture of cmos fet
JPS61185922A (en) * 1985-02-13 1986-08-19 Nec Corp Phosphorus doping method
JPS61248276A (en) * 1985-04-26 1986-11-05 Nec Corp Cleaning mechanism of floppy disk

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0413982A1 (en) * 1989-07-27 1991-02-27 Junichi Nishizawa Impurity doping method with adsorbed diffusion source
US5851909A (en) * 1989-08-11 1998-12-22 Seiko Instruments Inc. Method of producing semiconductor device using an adsorption layer
US5124272A (en) * 1989-08-11 1992-06-23 Seiko Instruments, Inc. Method of producing field effect transistor
JPH0391932A (en) * 1989-09-04 1991-04-17 Canon Inc Manufacture of semiconductor device
US5925574A (en) * 1989-12-01 1999-07-20 Seiko Instruments Inc. Method of producing a bipolar transistor
EP0430275A2 (en) * 1989-12-01 1991-06-05 Seiko Instruments Inc. Doping method of barrier region in semiconductor device
EP0430166A2 (en) * 1989-12-01 1991-06-05 Seiko Instruments Inc. Method of doping impurity into semiconductor films and patterned semiconductor strip
US5514620A (en) * 1989-12-01 1996-05-07 Seiko Instruments Inc. Method of producing PN junction device
US5338697A (en) * 1989-12-01 1994-08-16 Seiko Instruments Inc. Doping method of barrier region in semiconductor device
US5366922A (en) * 1989-12-06 1994-11-22 Seiko Instruments Inc. Method for producing CMOS transistor
US5874352A (en) * 1989-12-06 1999-02-23 Sieko Instruments Inc. Method of producing MIS transistors having a gate electrode of matched conductivity type
JPH03256368A (en) * 1990-03-06 1991-11-15 Seiko Instr Inc Photoelectric-conversion semiconductor device and its manufacture
US5310698A (en) * 1990-12-21 1994-05-10 Siemens Aktiengesellschaft Process for producing an arsenic-doped smooth polycrystalline silicon layer for very large scale integrated circuits
US5532185A (en) * 1991-03-27 1996-07-02 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
US5753530A (en) * 1992-04-21 1998-05-19 Seiko Instruments, Inc. Impurity doping method with diffusion source of boron-silicide film
US5491107A (en) * 1993-01-21 1996-02-13 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US5792700A (en) * 1996-05-31 1998-08-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
US6048781A (en) * 1996-05-31 2000-04-11 Micron Technology, Inc. Semiconductor processing method for providing large grain polysilicon films
WO2010003928A2 (en) * 2008-07-06 2010-01-14 Interuniversitair Microelektronica Centrum Vzw (Imec) Method for doping semiconductor structures and the semiconductor device thereof
WO2010003928A3 (en) * 2008-07-06 2010-05-06 Interuniversitair Microelektronica Centrum Vzw (Imec) Method for doping semiconductor structures and the semiconductor device thereof
JP2011527124A (en) * 2008-07-06 2011-10-20 アイメックImec Semiconductor structure doping method and semiconductor device
US8507337B2 (en) 2008-07-06 2013-08-13 Imec Method for doping semiconductor structures and the semiconductor device thereof
US8962369B2 (en) 2008-07-06 2015-02-24 Imec Method for doping semiconductor structures and the semiconductor device thereof
US8906792B2 (en) 2012-04-27 2014-12-09 Tokyo Electron Limited Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH07120635B2 (en) 1995-12-20

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term