JPS63162598A - Ｇａ↓０．↓５Ｉｎ↓０．↓５Ｐ結晶の成長方法 - Google Patents
Ｇａ↓０．↓５Ｉｎ↓０．↓５Ｐ結晶の成長方法Info
- Publication number
- JPS63162598A JPS63162598A JP31088986A JP31088986A JPS63162598A JP S63162598 A JPS63162598 A JP S63162598A JP 31088986 A JP31088986 A JP 31088986A JP 31088986 A JP31088986 A JP 31088986A JP S63162598 A JPS63162598 A JP S63162598A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growth
- group
- flow rate
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 13
- 229910052738 indium Inorganic materials 0.000 claims abstract description 13
- 239000002019 doping agent Substances 0.000 claims abstract description 5
- 229910021478 group 5 element Inorganic materials 0.000 claims abstract 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 2
- 238000002109 crystal growth method Methods 0.000 claims 2
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 230000014509 gene expression Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 18
- 239000002994 raw material Substances 0.000 description 12
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31088986A JPS63162598A (ja) | 1986-12-25 | 1986-12-25 | Ｇａ↓０．↓５Ｉｎ↓０．↓５Ｐ結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31088986A JPS63162598A (ja) | 1986-12-25 | 1986-12-25 | Ｇａ↓０．↓５Ｉｎ↓０．↓５Ｐ結晶の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63162598A true JPS63162598A (ja) | 1988-07-06 |
| JPH053440B2 JPH053440B2 (enrdf_load_stackoverflow) | 1993-01-14 |
Family
ID=18010600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31088986A Granted JPS63162598A (ja) | 1986-12-25 | 1986-12-25 | Ｇａ↓０．↓５Ｉｎ↓０．↓５Ｐ結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63162598A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5190891A (en) * | 1990-06-05 | 1993-03-02 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating a semiconductor laser device in which the p-type clad layer and the active layer are grown at different rates |
-
1986
- 1986-12-25 JP JP31088986A patent/JPS63162598A/ja active Granted
Non-Patent Citations (3)
| Title |
|---|
| JOURNAL OF CRYSTAL GROWTH=1983 * |
| JOURNAL OF CRYSTAL GROWTH=1986 * |
| PAPER PRESENTED AT INT SYMP GAAS AND RELATED COMPOUNDS KARUIZAWA JAPAN=1985 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5190891A (en) * | 1990-06-05 | 1993-03-02 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating a semiconductor laser device in which the p-type clad layer and the active layer are grown at different rates |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH053440B2 (enrdf_load_stackoverflow) | 1993-01-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |