JPS63162538U - - Google Patents

Info

Publication number

JPS63162538U

JPS63162538U JP5435887U JP5435887U JPS63162538U JP S63162538 U JPS63162538 U JP S63162538U JP 5435887 U JP5435887 U JP 5435887U JP 5435887 U JP5435887 U JP 5435887U JP S63162538 U JPS63162538 U JP S63162538U

Authority

JP

Japan

Prior art keywords

impurity diffusion

integrated circuit

semiconductor integrated

circuit device

diffusion layer

Prior art date

1987-04-09

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

• Espacenet
• Global Dossier
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• 239000004065 semiconductor Substances 0.000 claims description 4
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
• 229920005591 polysilicon Polymers 0.000 claims description 2
• 238000009792 diffusion process Methods 0.000 claims 4
• 239000012535 impurity Substances 0.000 claims 4
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• 238000010586 diagram Methods 0.000 description 1
• 230000005611 electricity Effects 0.000 description 1
• 238000002955 isolation Methods 0.000 description 1
• 230000003071 parasitic effect Effects 0.000 description 1
• 230000003068 static effect Effects 0.000 description 1