JPS63155742A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS63155742A JPS63155742A JP30178986A JP30178986A JPS63155742A JP S63155742 A JPS63155742 A JP S63155742A JP 30178986 A JP30178986 A JP 30178986A JP 30178986 A JP30178986 A JP 30178986A JP S63155742 A JPS63155742 A JP S63155742A
- Authority
- JP
- Japan
- Prior art keywords
- tungsten silicide
- sih4
- film
- increase
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 23
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 23
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims abstract 5
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 2
- 230000002159 abnormal effect Effects 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 239000011574 phosphorus Substances 0.000 abstract description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 abstract 2
- 229910019213 POCl3 Inorganic materials 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は半導体素子の製造方法に係シ、特に電極や配
線材料として用いられるタングステンシリサイドの形成
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of forming tungsten silicide used as an electrode or wiring material.
（従来の技術）
従来、ＬＰＧＶＤ装置でタングステンシリサイドを形成
する場合、形成温度を３６０℃としたプロセスが一般的
となっている。それは、セミコンダクｐ −ｒ７− Ａ
／ Ｙ （Ｓｅｍ１ｃｏｎｄｕｃｔｏｒ Ｗｏｒｌｄ
） １９８５−９ｐ８３−８８の図３に示されているよ
うに、３８０’Ｃ近辺よシ上では反応系の５ｉＨａ
反応が支配的になるため、タングステンシリサイド９の
シリコン成分が増大し、抵抗率が増大してしまうからで
ある。(Prior Art) Conventionally, when forming tungsten silicide using an LPGVD apparatus, a process in which the formation temperature is 360° C. is common. It is Semiconductor p-r7-A
/ Y (Sem1conductor World
) As shown in Figure 3 of 1985-9 p83-88, 5iHa of the reaction system is
This is because the reaction becomes dominant and the silicon component of the tungsten silicide 9 increases, resulting in an increase in resistivity.
したがって、低抵抗材料を形成することを目的として、
３６０°Ｃの形成温度が最も一般的となった。Therefore, with the aim of forming a low resistance material,
Formation temperatures of 360°C have become the most common.
（発明が解決しようとする問題点）
しかし、上記従来の３６０℃で形成する方法においては
、第３図に示すように、段差を有する下地１上にタング
ステンシリサイド＠２を形成すると、段差部で膜の密度
が小さい領域３が発生する問題点があった。そして、こ
のように低密度領域３が発生すると、第４図に示すよう
にタングステンシリサイド膜２上に酸化膜（例えばイオ
ン注入時のマスクとして使用される）５を形成する際に
、前記低密度領域３が異常に酸化され、配線抵抗の増大
や甚だしい場合には断線に至るという問題点があった。(Problems to be Solved by the Invention) However, in the conventional method of forming at 360° C., as shown in FIG. There is a problem in that a region 3 where the film density is low occurs. When the low-density region 3 is generated in this way, when forming the oxide film 5 (for example, used as a mask during ion implantation) on the tungsten silicide film 2, as shown in FIG. There is a problem in that the region 3 is abnormally oxidized, leading to an increase in wiring resistance and, in extreme cases, to disconnection.
この発明は上記の点に鑑みなされたもので、段差を有す
る下地上にも、良質の酸化プロセスにも充分耐え得る優
れたタングステンシリサイド膜を形成できるタングステ
ンシリサイド形成法を有する半導体素子の製造方法を提
供することを目的とする。This invention was made in view of the above points, and provides a method for manufacturing a semiconductor device using a tungsten silicide formation method that can form an excellent tungsten silicide film that can withstand high-quality oxidation processes even on a substrate with steps. The purpose is to provide.
（問題点を解決するだめの手段）
この発明は、ＷＦａとＳｉＨ４をソースガスに用いるＬ
ＰＣＶＤ法でタングステンシリサイドを形成する方法に
おいて、形成温度を３９０〜４３０°Ｃとするものであ
る。(Another Means to Solve the Problem) This invention is based on an LSI using WFa and SiH4 as source gas.
In a method of forming tungsten silicide by PCVD, the formation temperature is 390 to 430°C.
（作 用）
形成温度を３９０〜４３０℃にすると、段差部でも密度
の大きなタングステンシリサイドが形成される。しかし
、４００℃付近のプロセスでは、従来技術の説明の項で
も述べたように、３６０℃の時よシも抵抗率の増加があ
るが、Ｓｉ：Ｆ（４ガスの反応が活発になる分だけ、Ｓ
ｉＨ４流量を減らしてやることによシ容易に抵抗率の
増加は抑えられる。(Function) When the formation temperature is set to 390 to 430°C, tungsten silicide with a high density is formed even in the step portion. However, in the process at around 400°C, as mentioned in the explanation of the prior art, there is an increase in resistivity compared to when the temperature is 360°C. , S
The increase in resistivity can be easily suppressed by reducing the iH4 flow rate.
そして、前記のように段差部でも密度が太きくなった結
果、酸化プロセスが追加されても、配線抵抗の増大や断
線が生じることはない。As a result of the increased density even in the stepped portions as described above, even if an oxidation process is added, no increase in wiring resistance or disconnection will occur.
（実施例） μ下この発明の一実施例を第１図を参照して説明する。(Example) An embodiment of the present invention will now be described with reference to FIG.
第１図（ａ）は、シリコン基板ｌｌ上に１０００〜５０
００Ａの酸化膜１２を熱酸化によシ形成し、レソストを
用いた通常のホトリン法でライン・アンド・ス被−スを
有するように異方性エツチングを行い、再度、シリコン
基板１１が露出した部分に熱酸化によシ酸化膜１３を１
００〜５００人形成したものである。In Figure 1(a), 1000 to 50
An oxide film 12 of 00A was formed by thermal oxidation, and anisotropic etching was performed using a normal photolithography method using a photoresist so as to have line and space coverage, and the silicon substrate 11 was exposed again. An oxide film 13 is formed on the part by thermal oxidation.
It was created by 00 to 500 people.
このようにして酸化膜１２．１３の段差を有する基板ｌ
ｌ上にＬＰＣＶＤ法で多結晶シリコン膜１４を５００〜
３０００Ａ形成し、それにＰＯＣ１３ａ をソースガ
スにしてリンを１〜５ Ｅ ２Ｑ ｃｍ−３熱拡散する
（第１図（ｂ））。In this way, the substrate l having the steps of the oxide films 12 and 13 is
A polycrystalline silicon film 14 with a thickness of 500~
3000A is formed, and 1 to 5 E 2 Q cm -3 of phosphorus is thermally diffused therein using POC13a as a source gas (FIG. 1(b)).
しかる後、酸化膜１２．１３による段差が反映した前記
多結晶シリコン膜１４上に、ＷＦ’６とＳｉＨ。Thereafter, WF'6 and SiH are deposited on the polycrystalline silicon film 14 reflecting the step difference caused by the oxide films 12 and 13.
をソースガスとしたＬＰＣＶＤ法によシ、３９０℃以上
の形成温度でタングステンシリサイド膜１５を２０００
〜３０００Ａ形成する（第１図（Ｃ））。この時、形成
温度を３９０℃以上とすることによシ、タングステンシ
リサイド膜１５は段差部においても密度が高くなる。な
お、形成温度を３９０℃以上とすれば、段差部でも密度
を高くできるという効果を充分に得られるが、形成温度
が高温になる程、５ｉｎ４ の熱分解が活発になシ、
ＷＦｓとの反応が安定せず、膜厚、組成（ＳｉとＷの比
）共に再現性の良いタングステンシリサイド膜１５が得
られない。したがって、４００℃付近で（３９０〜４３
０℃）で形成するが最適と考えられる。The tungsten silicide film 15 is formed at a temperature of 2,000° C. or higher using the LPCVD method using as a source gas.
~3000A is formed (Fig. 1(C)). At this time, by setting the formation temperature to 390° C. or higher, the density of the tungsten silicide film 15 is increased even in the step portion. Note that if the forming temperature is 390°C or higher, the effect of increasing the density even in the step part can be sufficiently obtained, but the higher the forming temperature, the more active the thermal decomposition of 5in4 becomes.
The reaction with WFs is not stable, and a tungsten silicide film 15 with good reproducibility in both film thickness and composition (ratio of Si and W) cannot be obtained. Therefore, at around 400℃ (390 to 43
0°C) is considered optimal.
以上のように、上記の方法によれば、段差部においても
密度の高いタングステンシリサイド膜１５が得られた。As described above, according to the above method, a tungsten silicide film 15 with high density was obtained even in the step portion.
したがって、その後、酸化工程が存在しても、配線抵抗
の増大や断線が生じることは防止される。Therefore, even if there is an oxidation step thereafter, an increase in wiring resistance and disconnection are prevented.
第２図は、下地に段差を有したものと、フラットのもの
にそれぞれタングステンシリサイド［全２５０ＯＡ形成
した後に、９５０℃ドライ０２ 雰囲気で３０分間酸
化した時の単位面積当シの配線抵抗の比（段差有り／フ
ラット）を３６０℃と４００℃の形成温度で比較して示
す。ただし、タングステンシリサイド膜の組成（Ｓｉ／
Ｗ） ハ、３６０℃では２．４２ 、２．７０を、４
００℃では２．５１ 、２．７５であるものを用いてい
る。この図よシ、形成温度を４００℃とすれば、形成温
度３６０℃よシ段差を有する場合における配線抵抗の増
大が抑えられていることが分る。Figure 2 shows the ratio of wiring resistance per unit area when tungsten silicide was formed on the base with steps and on the flat base, respectively. A comparison of formation temperatures of 360°C and 400°C is shown. However, the composition of the tungsten silicide film (Si/
W) C, at 360℃, 2.42, 2.70, 4
At 00°C, those having values of 2.51 and 2.75 are used. This figure shows that when the formation temperature is 400.degree. C., the increase in wiring resistance in the case where there is a step difference is suppressed when the formation temperature is 360.degree.
なお、４００℃付近のプロセスでは、従来技術の説明の
項でも述べたように、タングステンシリサイドそのもの
の形成時に、３６０℃の時よりも抵抗率の増加があるが
、５ｉｎ４ ガスの反応が活発になる分だけ、ｓ ｕ
ｉ４ 流量を減らしてやることによって容易に抵抗率
の増加を抑えることができる。In addition, in the process at around 400°C, as mentioned in the explanation of the prior art, when forming the tungsten silicide itself, the resistivity increases compared to the process at 360°C, but the reaction of the 5in4 gas becomes more active. Minutes, s u
i4 The increase in resistivity can be easily suppressed by reducing the flow rate.
（発明の効果）
以上詳述したように、この発明の方法によれば、段差部
におけるタングステンシリサイド膜の低密度化が抑えら
れ、酸化工程で、段差部が異常酸化を起して配線抵抗が
増大したフ断線に至ることが無くなり、電気特性の優れ
た半導体素子の実現が可能となる。(Effects of the Invention) As detailed above, according to the method of the present invention, the density reduction of the tungsten silicide film at the step portion is suppressed, and the step portion undergoes abnormal oxidation during the oxidation process, resulting in an increase in wiring resistance. This eliminates the occurrence of increased disconnection, making it possible to realize a semiconductor element with excellent electrical characteristics.
第１図はこの発明の半導体素子の製造方法の一実施例を
示す工程断面図、第２図は段差を有する下地とフラット
の下地上にタングステンシリサイド膜を形成した場合の
配線抵抗の比を２つの形成温度で示す特性図、第３図お
よび第４図は従来の問題点を説明するための従来素子の
断面図である。
１１・・・シリコン基板、１２．１３・・・酸化膜、］
４・・・多結晶シリコン膜、１５・・・タングステンシ
リサイド膜。
イＸ弘す５系キの断ｄ口６り
第３図FIG. 1 is a process cross-sectional view showing an embodiment of the method for manufacturing a semiconductor device of the present invention, and FIG. 2 shows the ratio of wiring resistance when a tungsten silicide film is formed on a base with steps and a flat base. Characteristic diagrams shown at different forming temperatures, FIGS. 3 and 4 are cross-sectional views of conventional elements for explaining the problems of the conventional elements. 11...Silicon substrate, 12.13...Oxide film,]
4... Polycrystalline silicon film, 15... Tungsten silicide film. Figure 3
Claims (1)
の製造方法において、 タングステンシリサイドは、ＷＦ＿６とＳｉＨ＿４をソ
ースガスに用いるＬＰＣＶＤ法で、形成温度を３９０〜
４３０℃として形成することを特徴とする半導体素子の
製造方法。[Claims] In a method for manufacturing a semiconductor device that includes a tungsten silicide forming step, tungsten silicide is formed by a LPCVD method using WF_6 and SiH_4 as source gases at a temperature of 390 to 390°C.
A method for manufacturing a semiconductor device, characterized in that it is formed at a temperature of 430°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30178986A JPS63155742A (en) | 1986-12-19 | 1986-12-19 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30178986A JPS63155742A (en) | 1986-12-19 | 1986-12-19 | Manufacture of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63155742A true JPS63155742A (en) | 1988-06-28 |
Family
ID=17901195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30178986A Pending JPS63155742A (en) | 1986-12-19 | 1986-12-19 | Manufacture of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63155742A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116115A (en) * | 1995-06-26 | 1997-05-02 | Hyundai Electron Ind Co Ltd | Manufacture of capacitor for semiconductor element |
-
1986
- 1986-12-19 JP JP30178986A patent/JPS63155742A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116115A (en) * | 1995-06-26 | 1997-05-02 | Hyundai Electron Ind Co Ltd | Manufacture of capacitor for semiconductor element |
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