JPS63155742A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS63155742A
JPS63155742A JP30178986A JP30178986A JPS63155742A JP S63155742 A JPS63155742 A JP S63155742A JP 30178986 A JP30178986 A JP 30178986A JP 30178986 A JP30178986 A JP 30178986A JP S63155742 A JPS63155742 A JP S63155742A
Authority
JP
Japan
Prior art keywords
sih
step
tungsten silicide
film
lpcvd method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30178986A
Inventor
Akihiro Sakamoto
Original Assignee
Oki Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Ind Co Ltd filed Critical Oki Electric Ind Co Ltd
Priority to JP30178986A priority Critical patent/JPS63155742A/en
Publication of JPS63155742A publication Critical patent/JPS63155742A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To form an excellent tungsten silicide film on a base having a step by setting a forming temperature to 390W430°C in an LPCVD method using WF6 and SiH4 as source gas.
CONSTITUTION: When a polycrystalline silicon film 14 is formed by an LPCVD method on a substrate 11 having steps of oxide films 12, 13, phosphorus is thermally diffused with POCl3 as source gas, and then a tungsten silicide film 15 is formed at the forming temperature of 390°C or higher by an LPCVD method in which WF6 and SiH4 are used as source gases, the film 15 has high density even at the step. However, since the forming temperature becomes high, the thermal decomposition of the SiH4 becomes vigorous. Since the resistivity is increased at the time of forming the tungsten silicide as compared with the time at 360°C, the increase of the resistivity can be suppressed by reducing the flow rate of the SiH4 in the amount that the reaction of the SiH4 gas becomes vigorous. As a result, the increase in the wiring resistance due to an abnormal oxidation of the step or a disconnection in an oxidizing step is eliminated, thereby realizing a semiconductor element having excellent electric characteristics.
COPYRIGHT: (C)1988,JPO&Japio
JP30178986A 1986-12-19 1986-12-19 Manufacture of semiconductor element Pending JPS63155742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30178986A JPS63155742A (en) 1986-12-19 1986-12-19 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30178986A JPS63155742A (en) 1986-12-19 1986-12-19 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS63155742A true JPS63155742A (en) 1988-06-28

Family

ID=17901195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30178986A Pending JPS63155742A (en) 1986-12-19 1986-12-19 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS63155742A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116115A (en) * 1995-06-26 1997-05-02 Hyundai Electron Ind Co Ltd Manufacture of capacitor of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09116115A (en) * 1995-06-26 1997-05-02 Hyundai Electron Ind Co Ltd Manufacture of capacitor of semiconductor device

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