JPS63152155A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS63152155A
JPS63152155A JP30067486A JP30067486A JPS63152155A JP S63152155 A JPS63152155 A JP S63152155A JP 30067486 A JP30067486 A JP 30067486A JP 30067486 A JP30067486 A JP 30067486A JP S63152155 A JPS63152155 A JP S63152155A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
sio
si
formed
film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30067486A
Inventor
Yoichi Tatewaki
Mitsuhiro Tsubakiyama
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To reduce an element isolation region and simultaneously prevent generation of damage in a substrate, by performing selective oxidation after forming the offset of an Si3N4 film wherein an SiO thin film is formed for an Si substrate.
CONSTITUTION: An SiO2 12, and Si3N4 13 and an SiO2 14 are stacked on a P-type Si substrate 11. A mask is formed, RIE is performed, an SiO2 thin film 15 is arranged, and an Si3N4 thin film 16 and an SiO2 film 17 are deposited. Then a sidewall 17' of SiO2 is formed by RIE, and the Si3N4 16 and the SiO2 15 are eliminated by etching. The SiO2 14 and the sidewall 17' are subjected to wet etching, and an offset 16' of the Si3N4 film is formed. Thus an offset of Si3N4 is formed which has the SiO2 thin film 15 as a buffer layer arround a prearranged element isolation region. After a P-type inversion protection layer 18 is formed by implanting ions, a field oxide film 19 is formed by wet oxidation. By this constitution, the element isolation region can be reduced, and damages do not generate in the substrate.
COPYRIGHT: (C)1988,JPO&Japio
JP30067486A 1986-12-16 1986-12-16 Manufacture of semiconductor device Pending JPS63152155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30067486A JPS63152155A (en) 1986-12-16 1986-12-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30067486A JPS63152155A (en) 1986-12-16 1986-12-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS63152155A true true JPS63152155A (en) 1988-06-24

Family

ID=17887706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30067486A Pending JPS63152155A (en) 1986-12-16 1986-12-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS63152155A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03156957A (en) * 1989-11-15 1991-07-04 Sanyo Electric Co Ltd Manufacture of semiconductor device
US5068202A (en) * 1988-12-15 1991-11-26 Sgs-Thomson Microelectronics S.R.L. Process for excavating trenches with a rounded bottom in a silicon substrate for making trench isolation structures
US5173444A (en) * 1990-09-18 1992-12-22 Sharp Kabushiki Kaisha Method for forming a semiconductor device isolation region
US7192840B2 (en) 2002-10-30 2007-03-20 Oki Electric Industry Co., Ltd. Semiconductor device fabrication method using oxygen ion implantation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068202A (en) * 1988-12-15 1991-11-26 Sgs-Thomson Microelectronics S.R.L. Process for excavating trenches with a rounded bottom in a silicon substrate for making trench isolation structures
JPH03156957A (en) * 1989-11-15 1991-07-04 Sanyo Electric Co Ltd Manufacture of semiconductor device
US5173444A (en) * 1990-09-18 1992-12-22 Sharp Kabushiki Kaisha Method for forming a semiconductor device isolation region
US7192840B2 (en) 2002-10-30 2007-03-20 Oki Electric Industry Co., Ltd. Semiconductor device fabrication method using oxygen ion implantation

Similar Documents

Publication Publication Date Title
JPH02260660A (en) Manufacture of mos type semiconductor device
JPS63318779A (en) Manufacture of semiconductor device
JPH03110852A (en) Semiconductor device and manufacture thereof
JPS6312160A (en) Method for forming island shaped soi channel stopper
JPS63137457A (en) Manufacture of semiconductor device
JPS63300526A (en) Manufacture of semiconductor device
JPH0493080A (en) Semiconductor device and manufacture thereof
JPS6174350A (en) Manufacture of semiconductor device
JPS5331964A (en) Production of semiconductor substrates
JPS5670644A (en) Manufacture of semiconductor integrated circuit
JPS62211938A (en) Manufacture of semiconductor device
JPS5575238A (en) Method of fabricating semiconductor device
JPS60241267A (en) Manufacture of semiconductor device
JPS62126672A (en) Manufacture of charge transfer device
JPH04208572A (en) Manufacture of semiconductor memory
JPH02288341A (en) Mis-type semiconductor device
JPH0368170A (en) Manufacture of thin film semiconductor element
JPH0412528A (en) Manufacture of semiconductor device
JPS6411343A (en) Manufacture of semiconductor device
JPH0396249A (en) Manufacture of semiconductor device
JPH0422170A (en) Manufacture of nonvolatile memory
JPS63151047A (en) Manufacture of mos type semiconductor device
JPH02203549A (en) Manufacture of semiconductor device
JPH02371A (en) Manufacture of semiconductor device
JPS54130883A (en) Production of semiconductor device