JPS63150912A - 薄膜生成装置 - Google Patents

薄膜生成装置

Info

Publication number
JPS63150912A
JPS63150912A JP29663686A JP29663686A JPS63150912A JP S63150912 A JPS63150912 A JP S63150912A JP 29663686 A JP29663686 A JP 29663686A JP 29663686 A JP29663686 A JP 29663686A JP S63150912 A JPS63150912 A JP S63150912A
Authority
JP
Japan
Prior art keywords
reaction
container
substrate
gas
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29663686A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0588537B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Noboru Arima
昇 有馬
Nobuyoshi Ogino
荻野　信義
Hiroshi Kimura
博至 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd, Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP29663686A priority Critical patent/JPS63150912A/ja
Priority to US07/126,784 priority patent/US4926793A/en
Priority to EP87117846A priority patent/EP0270991B1/en
Priority to DE3789424T priority patent/DE3789424T2/de
Publication of JPS63150912A publication Critical patent/JPS63150912A/ja
Publication of JPH0588537B2 publication Critical patent/JPH0588537B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP29663686A 1986-12-15 1986-12-15 薄膜生成装置 Granted JPS63150912A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP29663686A JPS63150912A (ja) 1986-12-15 1986-12-15 薄膜生成装置
US07/126,784 US4926793A (en) 1986-12-15 1987-11-30 Method of forming thin film and apparatus therefor
EP87117846A EP0270991B1 (en) 1986-12-15 1987-12-02 Apparatus for forming thin film
DE3789424T DE3789424T2 (de) 1986-12-15 1987-12-02 Vorrichtung um dünne Schichten herzustellen.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29663686A JPS63150912A (ja) 1986-12-15 1986-12-15 薄膜生成装置

Publications (2)

Publication Number Publication Date
JPS63150912A true JPS63150912A (ja) 1988-06-23
JPH0588537B2 JPH0588537B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-12-22

Family

ID=17836108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29663686A Granted JPS63150912A (ja) 1986-12-15 1986-12-15 薄膜生成装置

Country Status (1)

Country Link
JP (1) JPS63150912A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63300512A (ja) * 1987-05-30 1988-12-07 Komatsu Ltd 気相成長装置
US20080152803A1 (en) * 2005-02-17 2008-06-26 Franck Lamouroux Method For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates
JP2009179885A (ja) * 2003-02-12 2009-08-13 Jtekt Corp アモルファス炭素膜の成膜装置
JP2011528753A (ja) * 2008-07-23 2011-11-24 イオンボント アクチェンゲゼルシャフト オルテン ワークピース上に反応ガス混合物から層を析出するためのｃｖｄ反応器
CN102586759A (zh) * 2011-01-11 2012-07-18 北京北方微电子基地设备工艺研究中心有限责任公司 一种气体输送系统及应用该系统的半导体处理设备
JP2015133405A (ja) * 2014-01-14 2015-07-23 日立金属株式会社 半導体製造装置
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置
CN105339522A (zh) * 2014-06-12 2016-02-17 深圳市大富精工有限公司 一种真空镀膜设备以及真空镀膜的方法
CN105378143A (zh) * 2014-06-12 2016-03-02 深圳市大富精工有限公司 一种真空镀膜设备、数据线支架以及镀膜方法
CN106245111A (zh) * 2016-10-10 2016-12-21 无锡宏纳科技有限公司 低压化学气相沉淀腔的晶圆支撑结构
JP2017212243A (ja) * 2016-05-23 2017-11-30 大陽日酸株式会社 反応装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63300512A (ja) * 1987-05-30 1988-12-07 Komatsu Ltd 気相成長装置
JP2009179885A (ja) * 2003-02-12 2009-08-13 Jtekt Corp アモルファス炭素膜の成膜装置
US8491963B2 (en) 2005-02-17 2013-07-23 Snecma Propulsion Solide Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
US20080152803A1 (en) * 2005-02-17 2008-06-26 Franck Lamouroux Method For the Densification of Thin Porous Substrates By Means of Vapour Phase Chemical Infiltration and Device For Loading Such Substrates
US8163088B2 (en) * 2005-02-17 2012-04-24 Snecma Propulsion Solide Method of densifying thin porous substrates by chemical vapor infiltration, and a loading device for such substrates
JP2011528753A (ja) * 2008-07-23 2011-11-24 イオンボント アクチェンゲゼルシャフト オルテン ワークピース上に反応ガス混合物から層を析出するためのｃｖｄ反応器
CN102586759A (zh) * 2011-01-11 2012-07-18 北京北方微电子基地设备工艺研究中心有限责任公司 一种气体输送系统及应用该系统的半导体处理设备
JP2015133405A (ja) * 2014-01-14 2015-07-23 日立金属株式会社 半導体製造装置
JP2015145317A (ja) * 2014-01-31 2015-08-13 ヤマハ株式会社 カーボンナノチューブの製造装置
CN105339522A (zh) * 2014-06-12 2016-02-17 深圳市大富精工有限公司 一种真空镀膜设备以及真空镀膜的方法
CN105378143A (zh) * 2014-06-12 2016-03-02 深圳市大富精工有限公司 一种真空镀膜设备、数据线支架以及镀膜方法
JP2017212243A (ja) * 2016-05-23 2017-11-30 大陽日酸株式会社 反応装置
CN106245111A (zh) * 2016-10-10 2016-12-21 无锡宏纳科技有限公司 低压化学气相沉淀腔的晶圆支撑结构

Also Published As

Publication number Publication date
JPH0588537B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-12-22

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