JPS63142845U - - Google Patents

Info

Publication number

JPS63142845U

JPS63142845U JP3634987U JP3634987U JPS63142845U JP S63142845 U JPS63142845 U JP S63142845U JP 3634987 U JP3634987 U JP 3634987U JP 3634987 U JP3634987 U JP 3634987U JP S63142845 U JPS63142845 U JP S63142845U

Authority

JP

Japan

Prior art keywords

insulating film

bonding pad

semiconductor device

type semiconductor

polysilicon film

Prior art date

1987-03-12

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 239000004065 semiconductor Substances 0.000 claims description 8
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
• 229920005591 polysilicon Polymers 0.000 claims description 3
• 238000002955 isolation Methods 0.000 claims description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• 229910052681 coesite Inorganic materials 0.000 description 1
• 229910052906 cristobalite Inorganic materials 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 239000000377 silicon dioxide Substances 0.000 description 1
• 235000012239 silicon dioxide Nutrition 0.000 description 1
• 229910052682 stishovite Inorganic materials 0.000 description 1
• 229910052905 tridymite Inorganic materials 0.000 description 1