JPS63140653U - - Google Patents

Info

Publication number
JPS63140653U
JPS63140653U JP3202087U JP3202087U JPS63140653U JP S63140653 U JPS63140653 U JP S63140653U JP 3202087 U JP3202087 U JP 3202087U JP 3202087 U JP3202087 U JP 3202087U JP S63140653 U JPS63140653 U JP S63140653U
Authority
JP
Japan
Prior art keywords
semiconductor region
photo sensor
conductivity type
type semiconductor
intrinsic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3202087U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3202087U priority Critical patent/JPS63140653U/ja
Publication of JPS63140653U publication Critical patent/JPS63140653U/ja
Pending legal-status Critical Current

Links

JP3202087U 1987-03-04 1987-03-04 Pending JPS63140653U (US07655688-20100202-C00010.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3202087U JPS63140653U (US07655688-20100202-C00010.png) 1987-03-04 1987-03-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3202087U JPS63140653U (US07655688-20100202-C00010.png) 1987-03-04 1987-03-04

Publications (1)

Publication Number Publication Date
JPS63140653U true JPS63140653U (US07655688-20100202-C00010.png) 1988-09-16

Family

ID=30838293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3202087U Pending JPS63140653U (US07655688-20100202-C00010.png) 1987-03-04 1987-03-04

Country Status (1)

Country Link
JP (1) JPS63140653U (US07655688-20100202-C00010.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096118A (ja) * 2005-09-29 2007-04-12 Seiko Epson Corp 半導体素子用電極の製造方法、トランジスタの製造方法、pinダイオードの製造方法、回路基板、電気光学装置、電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007096118A (ja) * 2005-09-29 2007-04-12 Seiko Epson Corp 半導体素子用電極の製造方法、トランジスタの製造方法、pinダイオードの製造方法、回路基板、電気光学装置、電子機器
JP4761199B2 (ja) * 2005-09-29 2011-08-31 セイコーエプソン株式会社 半導体素子用電極の製造方法、トランジスタの製造方法、およびpinダイオードの製造方法

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