JPS63132171A - Semiconductor type acceleration detector - Google Patents

Semiconductor type acceleration detector

Info

Publication number
JPS63132171A
JPS63132171A JP61277991A JP27799186A JPS63132171A JP S63132171 A JPS63132171 A JP S63132171A JP 61277991 A JP61277991 A JP 61277991A JP 27799186 A JP27799186 A JP 27799186A JP S63132171 A JPS63132171 A JP S63132171A
Authority
JP
Japan
Prior art keywords
acceleration
signal
output
sensor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61277991A
Other languages
Japanese (ja)
Inventor
Chiaki Mizuno
千昭 水野
Masato Imai
正人 今井
Toshitaka Yamada
山田 利貴
Hirohito Shioya
塩屋 博仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP61277991A priority Critical patent/JPS63132171A/en
Priority to DE8787113466T priority patent/DE3780242T2/en
Priority to EP19910112438 priority patent/EP0454190A3/en
Priority to EP87113466A priority patent/EP0261555B1/en
Priority to EP19910112458 priority patent/EP0456285A3/en
Priority to US07/098,050 priority patent/US4829822A/en
Priority to KR1019870010447A priority patent/KR900005635B1/en
Publication of JPS63132171A publication Critical patent/JPS63132171A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00Details of instruments
    • G01P1/003Details of instruments used for damping
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

PURPOSE:To recognize the abnormal state of an acceleration sensor by receiving the output of the acceleration sensor which uses a semiconductor chip, and outputting, for example, an absolute value in a front-rear direction and comparing it with the signal of a predictive abnormal area. CONSTITUTION:The signal of potential difference corresponding to acceleration which is generated between output terminals (a) and (b) of the acceleration sensor of a bridge circuit composed of a semiconductor chip is amplified A1 and A2 differentially, the output (c) is applied to one terminal of a differential amplifier A3, and a reference voltage is applied to the plus terminal. This circuit 14 inverts the input (c) when the input (c) is smaller than a reference value to obtain an output (e), which is further amplified A4 to obtain an acceleration detection signal. An abnormality detecting circuit 15 applies a reference voltage Vr1 to the plus terminal of a comparator C1, Vr2 to the minus terminal of C2, and the signal (c) to the other-terminal sides, and both outputs are applied together to the input side of an amplifying circuit 16. When the sensor 11 is destroyed, c>Vr1 and when the sensor is in fault, c<Vr2, and an output signal is at 'L' in both cases and the abnormality of the sensor 11 is securely discriminated and recognized.

Description

【発明の詳細な説明】 [産業上の利用分野] この発明は、例えば自動車のアンチスキッド制御装置に
効果的に信頼性をもって用いることができるようにする
半導体式加速度検出装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor acceleration detection device which allows for effective and reliable use, for example, in an anti-skid control device of a motor vehicle.

[従来の技術] 加速度検出素子として半導体を使用することが知られて
いる。第4図は半導体を用いた加速度検出素子の構成例
を示しているもので、シリコン等の半導体基板をビーム
状に切り出して半導体カンチレバー51を形成し、この
カンチレバー51の肉薄部511にピエゾ抵抗膜52を
添着させるようにする。
[Prior Art] It is known to use a semiconductor as an acceleration detection element. FIG. 4 shows a configuration example of an acceleration detecting element using a semiconductor. A semiconductor cantilever 51 is formed by cutting a semiconductor substrate such as silicon into a beam shape, and a piezoresistive film is formed on a thin part 511 of the cantilever 51. 52 is attached.

ここで、上記カンチレバー51の自由振動端には重り5
3が設けられているもので、加速度が作用したときにこ
のカンチレバー51が曲がるようになり、その曲がりの
程度によって上記ピエゾ抵抗膜52の抵抗値が変化され
るようになっている。
Here, a weight 5 is attached to the free vibration end of the cantilever 51.
3, the cantilever 51 bends when acceleration is applied, and the resistance value of the piezoresistive film 52 changes depending on the degree of bending.

上記ピエゾ抵抗[52による抵抗素子は、例えば定電流
電源に接続されたブリッジ回路を構成する抵抗素子とし
て使用されるものであり、カンチレバー51に作用する
加速度の量に対応した電気的な信号、具体的には加速度
量に対応した、第5図で示されるような直線性に富む電
圧信号が取出されるようにしている。
The piezoresistance element [52] is used, for example, as a resistance element constituting a bridge circuit connected to a constant current power supply, and it generates an electrical signal corresponding to the amount of acceleration acting on the cantilever 51, specifically Specifically, a highly linear voltage signal as shown in FIG. 5, which corresponds to the amount of acceleration, is extracted.

このような半導体を利用した加速度検出素子にあっては
、例えば金属線歪計等に比較して歪感度出力が高い長所
を有するものであるが、破壊強度を向上させることが困
難であり、機械的な強い衝撃が加わった場合に破壊され
るおそれがある。
Acceleration detection elements using such semiconductors have the advantage of high strain sensitivity output compared to, for example, metal wire strain meters, but it is difficult to improve the breaking strength and mechanical There is a risk of destruction if a strong impact is applied.

このような加速度検出素子は、例えば自動車用のアンチ
スキッド検出装置を構成する場合に効果的に使用される
。このような制御装置は、例えば路面状況の悪い道路上
で急制動をかけた場合に起こる車輪のロック現象を防止
するために用いられる。そして、この装置にあっては車
輪の回転速度センサ、および車体に作用する加速度を検
出する加速度センサからの検出情報を用いて、制動動作
時の実際の車速を演算する。ここで、制動動作時にもし
車輪がスリップして、この車輪がロック状態となった場
合には、車体に予め予測されている減速度が生じない。
Such an acceleration detection element is effectively used, for example, when constructing an anti-skid detection device for an automobile. Such a control device is used, for example, to prevent a wheel lock phenomenon that occurs when sudden braking is applied on a road with poor road surface conditions. This device calculates the actual vehicle speed during the braking operation using detection information from the wheel rotational speed sensors and the acceleration sensor that detects the acceleration acting on the vehicle body. Here, if a wheel slips during the braking operation and becomes locked, the previously predicted deceleration of the vehicle body will not occur.

加速度センサは、この車体の減速状態を検出しているも
ので、制動動作をしているにもかかほわらず、予測され
る減速度が作用していない場合には、車輪に作用してい
る制動力を減じ、車輪が容易に回転されるようにしてこ
の車輪のロック状態を解除させる。すなわち、加速度セ
ンサによって車輪のロック状態が監視されるようになり
、スリップの発生を検知して制動力を制御し、最も効果
的な制動動作が実行されるようにしているものである。
The acceleration sensor detects the deceleration state of the vehicle body, and if the predicted deceleration is not acting even though braking is in progress, it indicates that the deceleration is acting on the wheels. To release a locked state of a wheel by reducing braking force and making the wheel easily rotate. That is, the locked state of the wheels is monitored by the acceleration sensor, and the occurrence of slip is detected and the braking force is controlled to ensure that the most effective braking operation is performed.

このようなアンチスキッド制御装置を構成する場合、車
体の動作状態を観測するセンサ類に障害が発生した場合
、例えば半導体加速度検出素子のカンチレバーが破壊し
たような場合、これを直ちに認識し安全サイドミに処理
させるようにすることが重要である。
When configuring such an anti-skid control device, if a failure occurs in the sensors that observe the operating state of the vehicle body, for example, if the cantilever of the semiconductor acceleration detection element breaks, this will be immediately recognized and safety measures will be taken. It is important to let it be processed.

従来のこの種加速度検出装置における検出信号の処理回
路は、一般的に加速度センサからの検出信号を増幅する
よう構成されているものであり、例えば過大入力とセン
サ素子の破壊状態とを識別することができないものであ
った。
The detection signal processing circuit in a conventional acceleration detection device of this type is generally configured to amplify the detection signal from the acceleration sensor, and is used to distinguish between excessive input and a broken state of the sensor element, for example. It was impossible.

[発明が解決しようとする問題点] この発明は上記のような点に鑑みなされたもので、例え
ば検出素子が破壊されたような場合、この検出素子を用
いた加速度センサからの自力信号に基づいて、例えば過
大入力状態と確実にこの破壊を識別することができるよ
うにし、例えば信頼性の高い自動車用アンチスキッド制
御装置が構成されるようにする半導体式加速度検出装置
を提供しようとするものである。
[Problems to be Solved by the Invention] This invention has been made in view of the above-mentioned points. Therefore, it is an object of the present invention to provide a semiconductor acceleration detection device that can reliably distinguish between an excessive input state and this destruction, and which can be used to configure a highly reliable anti-skid control device for an automobile. be.

[問題点を解決するための手段] すなわち、この発明に係る半導体式加速度検出装置にあ
っては、半導体によって構成されるようにした加速度検
出素子に加速度センサを構成するものであり、このセン
サからの検出信号は絶対値回路に供給し、例えば前後方
向の加速度をそれぞれ絶対値として出力されるようにす
る。そして、この検出信号を予め予測される異常領域の
信号と比較し、上記センサの異常状態が認識されるよう
にしているものである。
[Means for Solving the Problems] That is, in the semiconductor acceleration detection device according to the present invention, an acceleration sensor is configured in an acceleration detection element made of a semiconductor, and from this sensor. The detection signal is supplied to an absolute value circuit so that, for example, acceleration in the longitudinal direction is output as an absolute value. Then, this detection signal is compared with a signal of a previously predicted abnormal area, and the abnormal state of the sensor is recognized.

[作用] すなわち、例えば加速度検出素子が機械的な衝撃等によ
って破壊されたような場合、加速度検出センサからは、
正常な加速度検出信号の存在範囲外の異常状態の信号が
検出信号として出力されるようになる。このような状態
となると、予め予測される設定値に基づいて異常状態が
検出されるものであり、このような異常状態の検出に伴
って、加速度検出信号の出力が、例えば阻止状態とされ
るようになるものである。
[Operation] In other words, for example, if the acceleration detection element is destroyed by mechanical impact, etc., the acceleration detection sensor will
An abnormal state signal outside the range of normal acceleration detection signals is output as a detection signal. When such a state occurs, an abnormal state is detected based on a set value predicted in advance, and with the detection of such an abnormal state, the output of the acceleration detection signal is set to a blocked state, for example. This is what happens.

[発明の実施例] 以下14図面を参照してこの発明の一実施例を説明する
。第1図はその概略的な構成を示すもので、加速度セン
サ11は前述した半導体加速度検出素子による抵抗素子
を含むブリッジ回路によって構成され、このブリッジ回
路には定電流回路12からの定電流電源が供給設定され
ている。
[Embodiment of the Invention] An embodiment of the invention will be described below with reference to 14 drawings. FIG. 1 shows its schematic configuration. The acceleration sensor 11 is composed of a bridge circuit including a resistive element made of the semiconductor acceleration detection element described above, and this bridge circuit is connected to a constant current power supply from a constant current circuit 12. Supply is set.

このような加速度センサ11からは、作用した加速度の
量に対応した値の電圧信号が出力されるものであり、こ
の検出信号は増幅回路13で絶対値回路14に供給され
るようになる。また、上記加速度センサ11からの出力
信号は異常検出回路15で常時監視されている。そして
、この異常検出回路15で上記センサ11からの検出信
号に異常が検出された場合には、上記絶対値回路14に
指令を与え、例えば加速度検出信号を特定されるレベル
に設定させ、センサ異常を認識させるようにするもので
ある。
Such an acceleration sensor 11 outputs a voltage signal having a value corresponding to the amount of applied acceleration, and this detection signal is supplied to an absolute value circuit 14 by an amplifier circuit 13. Further, the output signal from the acceleration sensor 11 is constantly monitored by an abnormality detection circuit 15. When the abnormality detection circuit 15 detects an abnormality in the detection signal from the sensor 11, a command is given to the absolute value circuit 14 to set the acceleration detection signal to a specified level, and detect the sensor abnormality. This is to make people aware of this.

第2図は上記のような装置をより具体化して示したもの
で、加速度センサ11構成するブリッジ回路の出力端a
およびb点間に、加速度の量に対応した電位差の信号が
発生し、この検出信号がアンプA1および2によって構
成されるインスツルメント差動増幅回路13によって増
幅される。そして、この増幅回路13からの出力部分C
からの加速度検出信号は、差動アンプA3によって構成
される絶対値回路14に供給する。ここで、上記アンプ
A3の(−)側端子に上記増幅された検出信号が供給さ
れるものであり、上記アンプA3の(+)が端子には、
抵抗R1およびR2で設定される基準電圧が供給設定さ
れるようにしている。そして、この絶対値回路14にあ
っては、入力信号が上記基準電圧より低い状態で、その
入力信号を反転増幅するようになるもので、例えばOG
の状態におけるセンサからの検出信号に基づく絶対値回
路I4への入力信号レベルに対応して基r$雷電圧設定
することによって、負方向の検出信号が反転されて出力
eに現れるようになる。すなわち、作用された加速度と
この絶対値回路14から検出出力との関係は、第3図に
示すようになり、そしてこの絶対値回路14からの出力
信号は、アンプA4によって構成される増幅回路18を
介して、加速度検出信号として出力さ鶴るようになる。
FIG. 2 shows the above-mentioned device in more detail, with the output terminal a of the bridge circuit constituting the acceleration sensor 11.
A signal with a potential difference corresponding to the amount of acceleration is generated between points A1 and B, and this detection signal is amplified by an instrument differential amplifier circuit 13 constituted by amplifiers A1 and A2. Then, the output portion C from this amplifier circuit 13
The acceleration detection signal from is supplied to an absolute value circuit 14 constituted by a differential amplifier A3. Here, the amplified detection signal is supplied to the (-) terminal of the amplifier A3, and the (+) terminal of the amplifier A3 is
A reference voltage set by resistors R1 and R2 is supplied and set. The absolute value circuit 14 inverts and amplifies the input signal when the input signal is lower than the reference voltage.
By setting the basic r$ lightning voltage in accordance with the input signal level to the absolute value circuit I4 based on the detection signal from the sensor in the state, the detection signal in the negative direction is inverted and appears at the output e. That is, the relationship between the applied acceleration and the detected output from the absolute value circuit 14 is as shown in FIG. It will be output as an acceleration detection signal via the .

異常検出回路15は、第1および第2のコンパレータC
1およびC2によって構成されている。このコンパレー
タC1およびC2には、抵抗R3〜R5によって設定さ
れる第1および第2の基$電圧VrlおよびVr2が供
給設定されるもので、第1のコンパレータCtの(+)
端子に第1の基準電圧Vrlが供給され、第2のコンパ
レータC2の(−)端子に第2の基準電圧Vr2が供給
されるようにする。そして、上記第1および第2のコン
パレータC1およびC2の(−)端子および(+)端子
に、上記増幅回路13からの検出信号を供給するもので
あり、このコンパレータC1およびC2からの出力信号
は、一括して増幅回路16の入力端に供給するものであ
る。
The abnormality detection circuit 15 includes first and second comparators C
1 and C2. First and second base voltages Vrl and Vr2 set by resistors R3 to R5 are supplied to the comparators C1 and C2, and the (+)
The first reference voltage Vrl is supplied to the terminal, and the second reference voltage Vr2 is supplied to the (-) terminal of the second comparator C2. The detection signal from the amplifier circuit 13 is supplied to the (-) and (+) terminals of the first and second comparators C1 and C2, and the output signals from the comparators C1 and C2 are , are collectively supplied to the input terminal of the amplifier circuit 16.

すなわち、第1のコンパレータC1にあっては、端子C
の信号が第1の基準電圧Vrlより高い状態でその出力
がローレベルとなるものであり、第2のコンパレータC
2にあっては、端子Cの電位が第2の基準電圧Vr2よ
り低い状態で、その出力がローレベルとされるようにな
る。したがって、端子Cの電圧が第1および第2の基準
電圧VrlとVr2との間に存在しない異常状態では、
第1および第2のコンパレータC1およびC1の出力の
いずれかがローレベルとなるものである。ここで、コン
パレータの出力はNPN hランジスタのオーブンコレ
クタで構成される。
That is, in the first comparator C1, the terminal C
When the signal of the second comparator C is higher than the first reference voltage Vrl, its output becomes low level.
2, the output becomes low level when the potential of the terminal C is lower than the second reference voltage Vr2. Therefore, in an abnormal state where the voltage at terminal C does not exist between the first and second reference voltages Vrl and Vr2,
Either of the outputs of the first and second comparators C1 and C1 becomes low level. Here, the output of the comparator is configured with an oven collector of an NPN h transistor.

すなわち、加速度センサ11を構成する半導体検出素子
が破壊して、例えば出力aがローレベルになったものと
すると、インスツルメント差動増幅回路13のの出力C
が!81の基準電圧Vrlよりもハイレベルとなり、こ
の異常検出回路15からの出力ラインdの信号はローレ
ベルとなる。また、センサ11部の障害発生でその出力
端子aが異常にハイレベルとなると、インスツルメント
差動増幅回路13の出力Cがローレベルとなり、この電
位が第2の基準電圧Vr2より低い値となって、異常検
出回路15からの出力dはローレベルとなる。
That is, if the semiconductor detection element constituting the acceleration sensor 11 is destroyed and, for example, the output a becomes low level, the output C of the instrument differential amplifier circuit 13
but! The signal on the output line d from the abnormality detection circuit 15 becomes low level. Furthermore, if a fault occurs in the sensor 11 and its output terminal a goes to an abnormally high level, the output C of the instrument differential amplifier circuit 13 goes to a low level, and this potential becomes a value lower than the second reference voltage Vr2. Therefore, the output d from the abnormality detection circuit 15 becomes low level.

したがって、加速度検出センサ11部分の検出素子に破
壊が生じたような状態となると、異常検出回路15から
の出力信号がローレベルとなって、センサ11の破壊を
認知するようになり、この加速度検出装置からの出力信
号を異常電圧領域に設定させるようになるものである。
Therefore, when the detection element of the acceleration detection sensor 11 is damaged, the output signal from the abnormality detection circuit 15 becomes low level, and the destruction of the sensor 11 is recognized. This allows the output signal from the device to be set in the abnormal voltage range.

[発明の効果] 以上のようにこの発明に係る半導体式の加速度検出装置
によれば、例えば半導体加速度センサに破壊が生じたよ
うな場合にあって、そのセンサの異常状態が確実に且つ
容易に識別認識できるようになるものであり、例えばこ
の加速度検出装置を自動車用のアンチスキッド制御装置
に利用したような場合にあって、その信頼性が確実に得
られるようになるものである。
[Effects of the Invention] As described above, according to the semiconductor acceleration detection device according to the present invention, for example, in the case where a semiconductor acceleration sensor is damaged, the abnormal state of the sensor can be reliably and easily detected. This enables identification and recognition, and for example, when this acceleration detection device is used in an anti-skid control device for an automobile, its reliability can be ensured.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例に係る半導体式加速度検出
装置の概略的な構成を示す図、第2図は上記装置をより
詳細にして示した回路構成図、第3図は上記検出装置の
加速度検出出力の状態を説明する図、第4図は半導体に
よる加速度検出素子の構成を示す図、第5図は上記検出
素子からの検出信号の状態を説明する図である。 11・・・加速度検出センサ、12・・・定電流回路、
13・・・増幅回路、14・・・絶対値回路、15・・
・異常検出回路、C’l、C2・・・コンパレータ。 出願人代理人 弁理士 鈴 江 武 3第1図 第2図 第3図 節4図 yyn4し一入力 第 5 図
FIG. 1 is a diagram showing a schematic configuration of a semiconductor acceleration detection device according to an embodiment of the present invention, FIG. 2 is a circuit diagram showing the above device in more detail, and FIG. 3 is a diagram showing the above detection device. FIG. 4 is a diagram illustrating the configuration of a semiconductor acceleration detection element, and FIG. 5 is a diagram illustrating the state of a detection signal from the detection element. 11... Acceleration detection sensor, 12... Constant current circuit,
13...Amplification circuit, 14...Absolute value circuit, 15...
- Abnormality detection circuit, C'l, C2... comparator. Applicant's agent Patent attorney Takeshi Suzue 3 Figure 1 Figure 2 Figure 3 Section 4 Figure yyn4shi1 input Figure 5

Claims (1)

【特許請求の範囲】 半導体チップからなる検出片に歪検出素子を設定した検
出素子を備え、加速度に対応した電気的な出力信号を発
生する加速度センサと、 この加速度センサからの検出出力信号が供給され、設定
された基準値の一方側の信号を反転出力させるようにす
る絶対値回路と、 上記加速度センサの異常状態で発生される信号を検出す
る異常検出回路と、 この異常検出回路で異常状態が検出された状態で、上記
絶対値回路からの出力を異常領域に設定させる手段と、 を具備したことを特徴とする半導体加速度検出装置。
[Claims] An acceleration sensor that includes a detection element in which a strain detection element is set on a detection piece made of a semiconductor chip, and that generates an electrical output signal corresponding to acceleration, and a detection output signal from the acceleration sensor is supplied. an absolute value circuit that inverts and outputs a signal on one side of the set reference value, and an abnormality detection circuit that detects a signal generated when the acceleration sensor is in an abnormal state. A semiconductor acceleration detection device comprising: means for setting the output from the absolute value circuit to an abnormal region in a state in which the absolute value circuit is detected.
JP61277991A 1986-09-22 1986-11-21 Semiconductor type acceleration detector Pending JPS63132171A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP61277991A JPS63132171A (en) 1986-11-21 1986-11-21 Semiconductor type acceleration detector
DE8787113466T DE3780242T2 (en) 1986-09-22 1987-09-15 SEMICONDUCTOR ACCELEROMETER.
EP19910112438 EP0454190A3 (en) 1986-09-22 1987-09-15 Semiconductor accelerometer
EP87113466A EP0261555B1 (en) 1986-09-22 1987-09-15 Semiconductor accelerometer
EP19910112458 EP0456285A3 (en) 1986-09-22 1987-09-15 Semiconductor accelerometer
US07/098,050 US4829822A (en) 1986-09-22 1987-09-17 Semiconductor accelerometer
KR1019870010447A KR900005635B1 (en) 1986-09-22 1987-09-21 Semiconductor accelerometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61277991A JPS63132171A (en) 1986-11-21 1986-11-21 Semiconductor type acceleration detector

Publications (1)

Publication Number Publication Date
JPS63132171A true JPS63132171A (en) 1988-06-04

Family

ID=17591102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61277991A Pending JPS63132171A (en) 1986-09-22 1986-11-21 Semiconductor type acceleration detector

Country Status (1)

Country Link
JP (1) JPS63132171A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0592205A1 (en) * 1992-10-07 1994-04-13 Nec Corporation Semiconductor sensor with fault detecting circuit
JPH06194379A (en) * 1992-12-25 1994-07-15 Mitsubishi Electric Corp Semiconductor acceleration detector
GB2368400A (en) * 2000-07-07 2002-05-01 Hino Jidosha Kabushiki Kaisha Acceleration sensor fault detector
JP2010223332A (en) * 2009-03-24 2010-10-07 Hitachi Plant Technologies Ltd Shaft-seal device for high-speed rotation apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0592205A1 (en) * 1992-10-07 1994-04-13 Nec Corporation Semiconductor sensor with fault detecting circuit
US5440234A (en) * 1992-10-07 1995-08-08 Nec Corporation Fault detecting circuit incorporated in semiconductor sensor and effective against any fault having influence on output voltage of a circuit component of the sensor
JPH06194379A (en) * 1992-12-25 1994-07-15 Mitsubishi Electric Corp Semiconductor acceleration detector
GB2368400A (en) * 2000-07-07 2002-05-01 Hino Jidosha Kabushiki Kaisha Acceleration sensor fault detector
GB2368400B (en) * 2000-07-07 2004-06-16 Hino Jidosha Kabushiki Kaisha Sensor fault detector
JP2010223332A (en) * 2009-03-24 2010-10-07 Hitachi Plant Technologies Ltd Shaft-seal device for high-speed rotation apparatus

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