JPS6313032A - Organic solvent soluble positive type photosensitive polyimide composition - Google Patents

Organic solvent soluble positive type photosensitive polyimide composition

Info

Publication number
JPS6313032A
JPS6313032A JP15690586A JP15690586A JPS6313032A JP S6313032 A JPS6313032 A JP S6313032A JP 15690586 A JP15690586 A JP 15690586A JP 15690586 A JP15690586 A JP 15690586A JP S6313032 A JPS6313032 A JP S6313032A
Authority
JP
Japan
Prior art keywords
polyimide
org
organic solvent
photosensitive polyimide
arom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15690586A
Other languages
Japanese (ja)
Other versions
JPH0644154B2 (en
Inventor
Kohei Nakajima
中島 紘平
Kazuaki Nishio
一章 西尾
Toshiya Koyama
俊哉 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Priority to JP61156905A priority Critical patent/JPH0644154B2/en
Publication of JPS6313032A publication Critical patent/JPS6313032A/en
Publication of JPH0644154B2 publication Critical patent/JPH0644154B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE:To obtain an org. solvent soluble positive type photosensitive polyimide compsn. which has high sensitivity and excellent heat resistance and dimensional stability and is industrially easily produceable by forming the photosensitive compsn. from a prescribed arom. polyimide and orthoquinone diazide compd. CONSTITUTION:The photosensitive polyimide compsn. is constituted of the org. solvent soluble arom. polyimide consisting of the condensation product of a biphenyl tetracarboxylic acid component and org. diamine component and the orthoquinone diazide compd. 2,3,3',4'-Biphenyl tetracarboxylic acid or the dianhydride thereof is more particularly preferable as the phenyl tetracarboxylic acid component in terms of solubility. The org. diamine compd. in which two amino groups are bonded to an arom. ring or arom. heterocycle directly or via one methylene group is more preferable as the org. diamine component in terms of heat resistance. The amt. of the diazide compd. to be compounded is 0.2-30pts.wt., more particularly preferably 1-20pts.wt. per 100pts.wt. polyimide.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高感度で、耐熱性及び寸法安定性に優れると
共に貯蔵安定性にも優れ、且つ工業的に製造容易であり
、更に電気的及び機械的性質も優れた、有ll&溶媒可
溶性のポジ型感光性ポリイミド組成物に関するもので、
本発明のポジ型感光性ポリイミド組成物は、特に、半導
体、抵抗体等の電子部品のパフシベーシヲン膜、多層集
積回路の眉間絶縁膜、プリント回路の半田付は保護膜、
液晶用配向膜、メモリー素子のα線遮蔽膜、電解コンデ
ンサのwA縁膜、エツチングレジスト等の形成材料とし
て好適に使用することができ、その他、ポリイミドの公
知の用途への適用が可能である。
[Detailed Description of the Invention] [Industrial Application Field] The present invention has high sensitivity, excellent heat resistance and dimensional stability, excellent storage stability, and is industrially easy to manufacture. It also relates to a positive-working photosensitive polyimide composition that is soluble in solvents and has excellent mechanical properties.
The positive photosensitive polyimide composition of the present invention is particularly suitable for use as a puffed basis film for electronic components such as semiconductors and resistors, as an insulating film between the eyebrows of multilayer integrated circuits, as a protective film for soldering of printed circuits, and as a protective film for soldering of printed circuits.
It can be suitably used as a forming material for alignment films for liquid crystals, α-ray shielding films for memory devices, wA edge films for electrolytic capacitors, etching resists, etc., and can be applied to other known uses of polyimide.

〔従来の技術及びその問題点〕[Conventional technology and its problems]

芳香族ポリイミドは、その耐熱性、電気的特性、機械的
特性等から電子部品への応用に適した有機材料である。
Aromatic polyimide is an organic material suitable for application to electronic components due to its heat resistance, electrical properties, mechanical properties, etc.

更に、芳香族ポリイミドに感光性を付与すれば、作業工
程の合理化がなされるため、感光性の付与について各種
の検討がなされてきた。
Furthermore, if aromatic polyimide is imparted with photosensitivity, the working process will be streamlined, and therefore various studies have been made on imparting photosensitivity.

芳香族ポリイミドに感光性を付与する方法としては、芳
香族ポリイミドは一般に有機溶媒に難溶であるので、感
光性を付与するための可溶性前駆体を用いる方法が知ら
れている。
As a method for imparting photosensitivity to aromatic polyimide, since aromatic polyimide is generally poorly soluble in organic solvents, a method using a soluble precursor for imparting photosensitivity is known.

例えば、特開昭54−116216号公報及び特開昭5
4−116217号公報に記載されている架橋性基を可
溶性前駆体に化学的に結合する方法や、特開昭54−1
45794号公報及び特開昭57−168942号公報
に記載されている架橋性単量体を混合する方法等がある
For example, JP-A-54-116216 and JP-A-5
4-116217, a method of chemically bonding a crosslinkable group to a soluble precursor, and JP-A No. 54-1
There are methods of mixing crosslinkable monomers as described in JP-A-45794 and JP-A-57-168942.

しかし、上記の何れの方法も、光加工後、加熱処理によ
りイミド閉環を行う必要があり、その際、イミド閉環に
伴う脱水と架橋性基成分の揮散による体積収縮とによっ
て、膜厚の損失及び寸法精度の低下が起きることは避け
られない欠点である。
However, in any of the above methods, it is necessary to perform imide ring closure by heat treatment after photoprocessing, and at that time, loss of film thickness and volume shrinkage due to dehydration accompanying imide ring closure and volatilization of crosslinkable group components. A reduction in dimensional accuracy is an unavoidable drawback.

更に、加熱処理工程は、他の電子部品或いは有機材料の
劣化を招く可能性もある。
Furthermore, the heat treatment process may also lead to deterioration of other electronic components or organic materials.

上述のイミド閉環に伴う体積収縮による寸法精度の劣化
を防ぐために、可溶性ポリイミドに架橋性基を化学的に
結合した感光性ポリイミドが、特開昭58−29821
号公報及び特開昭61−59334号公報に提案されて
いる。
In order to prevent the deterioration of dimensional accuracy due to the volume shrinkage caused by the above-mentioned imide ring closure, a photosensitive polyimide in which a crosslinkable group is chemically bonded to a soluble polyimide was disclosed in JP-A-58-29821.
This method has been proposed in Japanese Patent Application Laid-open No. 61-59334.

しかし、これらの感光性ポリイミドも、高温時の架橋性
基連敗に伴う体積収縮による寸法精度の劣化は避けられ
ず、また、架橋性基導入のために煩雑な工程を必要とす
る。更に、前者(特開昭58−29821号公報)のポ
リイミドは、光硬化性に劣る。
However, these photosensitive polyimides also inevitably suffer from deterioration in dimensional accuracy due to volume shrinkage due to continuous loss of crosslinkable groups at high temperatures, and also require complicated steps to introduce crosslinkable groups. Furthermore, the polyimide of the former (Japanese Unexamined Patent Publication No. 58-29821) has poor photocurability.

また、比較的低分子の架橋性アルキル基をポリイミドに
直接結合した感光性ポリイミドが、特開昭58−191
T号公報及び特開昭60−155277号公報に提案さ
れている。
In addition, a photosensitive polyimide in which a relatively low-molecular-weight crosslinkable alkyl group is directly bonded to polyimide was published in JP-A-58-191.
This method has been proposed in Publication No. T and Japanese Unexamined Patent Publication No. 60-155277.

しかし、これらの感光性ポリイミドは、体積収縮による
寸法精度の劣化は少ないが、光硬化性に劣るという欠点
を有する。
However, although these photosensitive polyimides have little deterioration in dimensional accuracy due to volumetric shrinkage, they have the disadvantage of poor photocurability.

従って、本発明の目的は、高感度で、耐熱性及び寸法安
定性に優れ、・且つ工業的に製造容易である、有機溶媒
可溶性のポジ型感光性ポリイミド組成物を提供すること
にある。
Therefore, an object of the present invention is to provide an organic solvent-soluble positive photosensitive polyimide composition that has high sensitivity, excellent heat resistance and dimensional stability, and is easy to manufacture industrially.

〔問題点を解決するための手段〕[Means for solving problems]

本発明者等は、種々検討した結果、ビフェニルテトラカ
ルボン酸成分と有機ジアミン成分との重縮合物からなる
有機溶媒可溶性ポリイミドに、オルトキノンジアジド化
合物を添加した組成物が、架橋性基を有するポリイミド
や架橋性添加物を含まないにも拘わらすポジ型の高い感
光性を有し、前記目的を達成し得るものであることを知
見した。
As a result of various studies, the present inventors have found that a composition in which an orthoquinone diazide compound is added to an organic solvent-soluble polyimide consisting of a polycondensate of a biphenyltetracarboxylic acid component and an organic diamine component is a polyimide having a crosslinkable group. It has been found that the film has high positive photosensitivity even though it does not contain crosslinking additives, and can achieve the above object.

本発明は、上記知見に基づきなされたもので、ビフェニ
ルテトラカルボン酸成分と有機ジアミン成分との重縮合
物からなる有機溶媒可溶性の芳香族ポリイミドと、オル
トキノンジアジド化合物とからなる、有機溶媒可溶性の
ポジ型感光性ポリイミド組成物を提供するものである。
The present invention was made based on the above findings, and consists of an organic solvent-soluble aromatic polyimide made of a polycondensate of a biphenyltetracarboxylic acid component and an organic diamine component, and an organic solvent-soluble positive polyimide made of an orthoquinone diazide compound. The present invention provides a type photosensitive polyimide composition.

以下に本発明の有機溶媒可溶性のポジ型感光性ポリイミ
ド組成物について詳述する。
The organic solvent-soluble positive-working photosensitive polyimide composition of the present invention will be described in detail below.

本発明のポジ型感光性ポリイミド組成物を構成する有機
溶媒可溶性のポリイミドは、ビフェニルテトラカルボン
酸成分と有機ジアミン成分とを公知の方法で重合・イミ
ド化することにより得ることができる。
The organic solvent-soluble polyimide constituting the positive photosensitive polyimide composition of the present invention can be obtained by polymerizing and imidizing a biphenyltetracarboxylic acid component and an organic diamine component by a known method.

上記有機溶媒可溶性のポリイミドの製造に用いられる上
記ビフェニルテトラカルボン酸成分としては、具体的に
は3.3″、4,4°−ビフェニルテトラカルボン酸又
はその二無水物、2.2’ 。
The biphenyltetracarboxylic acid component used in the production of the organic solvent-soluble polyimide is specifically 3.3'', 4,4°-biphenyltetracarboxylic acid or its dianhydride, 2.2'.

3.3° −ビフェニルテトラカルボン酸又はその二無
水物、2,3.3”、4° −ビフェニルテトラカルボ
ン酸又はその二無水物等が挙げられ、これらの内でも、
2,3.3″、4° −ビフェニルテトラカルボン酸又
はその二無水物がポリマーの溶解性の上から特に好まし
い。
Examples include 3.3°-biphenyltetracarboxylic acid or its dianhydride, 2,3.3'', 4°-biphenyltetracarboxylic acid or its dianhydride, and among these,
2,3.3'', 4°-biphenyltetracarboxylic acid or its dianhydride is particularly preferred from the viewpoint of polymer solubility.

また、上記有機溶媒可溶性のポリイミドの製造に用いら
れる上記有機ジアミン成分としては、耐熱性の観点から
、2つのアミノ基が芳香族環又は芳香族複素環に直接又
は1つのメチレン基を介して結合している有機ジアミン
化合物が好ましく、かかる有機ジアミン化合物の例とし
ては、下記式で示されるもの等が挙げられる。
In addition, in the organic diamine component used in the production of the organic solvent-soluble polyimide, from the viewpoint of heat resistance, two amino groups are bonded to the aromatic ring or aromatic heterocycle directly or through one methylene group. An organic diamine compound having the following formula is preferable, and examples of such an organic diamine compound include those represented by the following formula.

これらの有機ジアミン化合物の内でも、多環芳香族ジア
ミン化合物がポリマーの溶解性の上から特に好ましい。
Among these organic diamine compounds, polycyclic aromatic diamine compounds are particularly preferred from the viewpoint of polymer solubility.

また、上記の有機ジアミン化合物は、ポリイミドの耐熱
性に悪影響を与えない範囲内で、アルキル基、アルコキ
シル基、ヒドロキシル基等の置換基を有していても差し
支えない。
Further, the organic diamine compound described above may have a substituent such as an alkyl group, an alkoxyl group, or a hydroxyl group within a range that does not adversely affect the heat resistance of the polyimide.

上記有機ジアミン成分としては、上記有機ジアミン化合
物を単独で使用しても良く、又2種以上併用しても良い
As the organic diamine component, the organic diamine compounds described above may be used alone or in combination of two or more.

更に、ポリイミドの接着性を向上させるために、耐熱性
を低下させない範囲で、上記有機ジアミン成分として、
シロキサン構造を有する脂肪族性の化合物を上記有機ジ
アミン化合物と併用することもできる。かかる化合物の
好ましい例としては、下記式で示される化合物等が挙げ
られる。
Furthermore, in order to improve the adhesiveness of polyimide, as the organic diamine component, within a range that does not reduce the heat resistance,
An aliphatic compound having a siloxane structure can also be used in combination with the above organic diamine compound. Preferred examples of such compounds include compounds represented by the following formulas.

CH3CH。CH3CH.

本発明で用いられる上記有機溶媒可溶性のポリイミドは
、ポリイミド0.5g/N−メチル−2−ピロリドン1
00+slの濃度の溶液として30℃において測定した
対数粘度が0.1〜3.0特に0.2〜2.0の範囲内
にあるものが好ましい。
The organic solvent-soluble polyimide used in the present invention is 0.5 g of polyimide/1 1 N-methyl-2-pyrrolidone.
It is preferable that the logarithmic viscosity measured at 30°C as a solution having a concentration of 00+sl is in the range of 0.1 to 3.0, particularly 0.2 to 2.0.

本発明で用いられる上記有機溶媒可溶性のポリイミドの
製造について更に詳述すると、前記重縮合物を合成する
際の前記ビフェニルテトラカルボン酸成分と前記を機ジ
アミン成分との使用割合は略等モルである。そして、両
成分を、100℃以上の高温において一段階で重合・イ
ミド化することにより合成できる。また、比較的低温に
おいて、先ず重合反応を行わせ、次いでイミド化反応を
行わせる二段階反応によっても合成できる。
To explain in more detail the production of the organic solvent-soluble polyimide used in the present invention, the proportions of the biphenyltetracarboxylic acid component and the diamine component used in synthesizing the polycondensate are approximately equimolar. . Then, both components can be synthesized by polymerizing and imidizing them in one step at a high temperature of 100° C. or higher. Alternatively, it can be synthesized by a two-step reaction in which a polymerization reaction is first performed and then an imidization reaction is performed at a relatively low temperature.

また、本発明の感光性ポリイミド組成物を構成するオル
トキノンジアジド化合物としては、分子中にオルトキノ
ンジアジド基を1個又は2個以上含有する化合物であれ
ば良く、例えば、オルトベンゾキノンジアジド化合物、
オルトナフトキノンジアジド化合物、オルトキノリンキ
ノンジアジド化合物等が挙げられ、特にオルトナフトキ
ノンジアジド化合物が好ましい。
Further, the orthoquinonediazide compound constituting the photosensitive polyimide composition of the present invention may be any compound containing one or two or more orthoquinonediazide groups in the molecule, such as orthobenzoquinonediazide compounds,
Examples include ortho-naphthoquinone diazide compounds, ortho-quinoline quinone diazide compounds, and ortho-naphthoquinone diazide compounds are particularly preferred.

上記オルトキノンジアジド化合物は、通常、オルトキノ
ンジアジドスルホン酸エステル或いはオルトキノンジア
ジドスルホン酸アミドとして用いられることが好ましい
The above-mentioned orthoquinonediazide compound is usually preferably used as an orthoquinonediazide sulfonic acid ester or an orthoquinonediazide sulfonic acid amide.

これらのオルトキノンジ7ジドスルホン酸エステル或い
はオルトキノンジアジドスルホン酸アミドは、通常、オ
ルトキノンジアジドスルホン酸クロライドと、水酸基又
はアミノ基を有する化合物との縮合反応によって得られ
る。
These orthoquinone di7didosulfonic acid esters or orthoquinonediazide sulfonic acid amide are usually obtained by a condensation reaction between orthoquinonediazide sulfonic acid chloride and a compound having a hydroxyl group or an amino group.

上記オルトキノンジアジドスルホン酸クロライドを構成
するオルトキノンジアジドスルホン酸成分としては、例
えば、1,2−ナフトキノン−2−ジアジド−4−スル
ホン酸、1,2−ナフトキノン−2−ジアジド−5−ス
ルホン酸等を挙げることができる。
Examples of the orthoquinonediazide sulfonic acid component constituting the orthoquinonediazide sulfonic acid chloride include 1,2-naphthoquinone-2-diazide-4-sulfonic acid, 1,2-naphthoquinone-2-diazide-5-sulfonic acid, etc. can be mentioned.

また、上記水酸基又はアミノ基を有する化合物としては
、例えば、エチレングリコール、フェノール、0−クレ
ゾール、m−クレゾール、p−クレゾール、カテコール
、ヒドロキノン、2.4−ジヒドロキシベンゾフェノン
、2,3.4−)ジヒドロキシベンゾフェノン・2・ 
2゛・ 4・ 4゜−テトラヒドロキシベンゾフェノン
、2.2−ビス(4−ヒドロキシフェニル)プロパン、
4゜4° −ジヒドロキシジフェニルスルホン、エタノ
ールアミン、アニリン、2−ヒドロキシアニリン、3−
ヒドロキシアニリン、4−ヒドロキシアニリン等を挙げ
ることができる。
In addition, examples of the above-mentioned compounds having a hydroxyl group or an amino group include ethylene glycol, phenol, 0-cresol, m-cresol, p-cresol, catechol, hydroquinone, 2,4-dihydroxybenzophenone, 2,3,4-) Dihydroxybenzophenone 2.
2゛・4・4゜-tetrahydroxybenzophenone, 2.2-bis(4-hydroxyphenyl)propane,
4゜4゜-dihydroxydiphenylsulfone, ethanolamine, aniline, 2-hydroxyaniline, 3-
Hydroxyaniline, 4-hydroxyaniline, etc. can be mentioned.

上記オルトキノンジアジド化合物の配合量は、前記有機
溶媒可溶性ポリイミド100重量部に対して0.2〜3
0重量部、特に1〜20重量部とするのが好ましい、配
合量が0.2重量部より少ないと、得られる組成物の感
度が低くなり、また30重量部より多いと、得られる組
成物により形成される膜の性質が低下する。
The blending amount of the orthoquinone diazide compound is 0.2 to 3 parts by weight based on 100 parts by weight of the organic solvent-soluble polyimide.
The amount is preferably 0 parts by weight, especially 1 to 20 parts by weight. If the amount is less than 0.2 parts by weight, the sensitivity of the resulting composition will be low, and if it is more than 30 parts by weight, the sensitivity of the resulting composition will decrease. The properties of the film formed are deteriorated.

而して、本発明のポジ型感光性ポリイミド組成物は、レ
リーフパターンの形成材料として使用する場合、有機溶
媒に溶解された溶液として用いられる。この有機溶媒と
しては、N、N−ジメチルホルムアミド、N、N−ジメ
チルアセトアミド、N−メチル−2−ピロリドン、N−
ビニル−2−ピロリドン、ジメチルスルホキシド、ヘキ
サメチレンホスホアミド、m−クレゾール等を挙げるこ
とができ、更に、キシレン、エチルセロソルブ、ジグラ
イム、ジオキサン等と上記有機溶媒との混合溶媒を用い
ることもできる。上記のポジ型感光性ポリイミド組成物
の有機溶媒溶液の好ましいポリマー濃度は2〜40重量
%である。
When the positive photosensitive polyimide composition of the present invention is used as a relief pattern forming material, it is used as a solution dissolved in an organic solvent. Examples of the organic solvent include N,N-dimethylformamide, N,N-dimethylacetamide, N-methyl-2-pyrrolidone, N-
Vinyl-2-pyrrolidone, dimethyl sulfoxide, hexamethylene phosphoamide, m-cresol, etc. can be mentioned, and mixed solvents of xylene, ethyl cellosolve, diglyme, dioxane, etc. and the above organic solvents can also be used. The preferred polymer concentration of the organic solvent solution of the positive photosensitive polyimide composition described above is 2 to 40% by weight.

上記のポジ型感光性ポリイミド組成物の有機溶媒溶液は
、例えば、前記の酸成分とジアミン成分とを重合・イミ
ド化反応させて得られた反応溶液を貧溶媒に滴下し、前
記有機溶媒可溶性のポリイミドを析出乾燥させた後、該
ポリイミドを上記ポリマー濃度で、上記を機溶媒に、前
記オルトキノンジアジド化合物と共に溶解させることに
より調製することができる。また、150℃以上の温度
で1段階で重合・イミド化反応を行った場合には、反応
溶液を冷却後、該反応溶液に前記オルトキノンジアジド
化合物を添加することによっても調製することができる
The organic solvent solution of the above-mentioned positive photosensitive polyimide composition can be prepared by, for example, dropping a reaction solution obtained by polymerizing and imidizing the acid component and the diamine component into a poor solvent. After the polyimide is precipitated and dried, the polyimide can be prepared by dissolving the polyimide at the above polymer concentration in an organic solvent together with the orthoquinone diazide compound. Furthermore, when the polymerization/imidization reaction is carried out in one step at a temperature of 150° C. or higher, it can also be prepared by adding the orthoquinonediazide compound to the reaction solution after cooling the reaction solution.

上記のポジ型感光性ポリイミド組成物の有機溶媒溶液に
は、支持体との接着性を向上させるために、適宜、接着
助剤を添加することができる。かかる接着助剤としては
、例えば、γ−メタクリルオキシプロピルトリメトキシ
シラン、T−アミノプロピルトリエトキシシラン、γ−
グリシドキシプロピルトリメトキシシラン、r−(2−
アミノエチル)アミノプロピルメチルジメトキシシラン
等を挙げることができる。
An adhesion aid may be appropriately added to the organic solvent solution of the positive photosensitive polyimide composition described above in order to improve the adhesion to the support. Such adhesion aids include, for example, γ-methacryloxypropyltrimethoxysilane, T-aminopropyltriethoxysilane, γ-
Glycidoxypropyltrimethoxysilane, r-(2-
Examples include aminoethyl)aminopropylmethyldimethoxysilane.

本発明のポジ型感光性ポリイミド組成物によれば、上記
の如くポジ型感光性ポリイミド組成物のを機溶媒溶液を
調製することにより次のようにしてポジ型レリーフパタ
ーンを形成することができる。
According to the positive photosensitive polyimide composition of the present invention, a positive relief pattern can be formed in the following manner by preparing a solution of the positive photosensitive polyimide composition in a solvent as described above.

即ち、先ず、上記のポジ型感光性ポリイミド組成物の有
機溶媒溶液を基板に塗布し、これを乾燥して有Il溶媒
を除去する。基板への塗布は、例えば回転塗布機で行う
ことができる。塗膜の乾燥は150℃以下、好ましくは
100℃以下で行うと良い、この際減圧はしてもしなく
ても良い、乾燥後、塗膜にポジ型のフォトマスクを置き
、紫外線、可視光線、電子線、X線等の活性光線を照射
する。
That is, first, an organic solvent solution of the positive photosensitive polyimide composition described above is applied to a substrate, and this is dried to remove the Il-containing solvent. Coating onto the substrate can be performed using, for example, a rotary coater. The coating film should be dried at a temperature of 150°C or lower, preferably 100°C or lower. At this time, reduced pressure may or may not be applied. After drying, a positive photomask is placed on the coating film and exposed to ultraviolet rays, visible light, Irradiate with actinic rays such as electron beams and X-rays.

次いで、露光部分を現像液で洗い流すことによりポリイ
ミドのポジ型レリーフパターンを得る。
Next, a positive relief pattern of polyimide is obtained by washing away the exposed area with a developer.

上記の現像液としては、プロピルアミン、ブチルアミン
、モノエタノールアミン等の1級有機アミン化合物、エ
チレンジアミン、トリメチレンジアミン等の1級有機ジ
アミン化合物、ヒドラジン等を単独で又は2種以上混合
して使用することが好ましい。また、これらのアミン化
合物に、メタノール、エタノール、2−プロパツール、
エチレングリコール、エチルセロソルブ、ブチルセロソ
ルブ、ジエチレングリコール、エチルカルピトール、ブ
チルカルピトール、水等のポリイミドの非溶媒や、N−
メチル−2−ピロリドン、N、N−ジメチルホルムアミ
ド、N、N−ジメチルアセトアミド、ヘキサメチレンホ
スホアミド等のポリイミドの溶媒を混合したものを用い
ることもできる。
As the above developer, primary organic amine compounds such as propylamine, butylamine, and monoethanolamine, primary organic diamine compounds such as ethylenediamine and trimethylenediamine, hydrazine, etc. are used alone or in combination of two or more. It is preferable. In addition, these amine compounds include methanol, ethanol, 2-propanol,
Polyimide nonsolvents such as ethylene glycol, ethyl cellosolve, butyl cellosolve, diethylene glycol, ethyl carpitol, butyl carpitol, water, and N-
It is also possible to use a mixture of polyimide solvents such as methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, and hexamethylenephosphoamide.

上記現像は、現像液温度が0〜150℃の範囲で行うこ
とが好ましい。
The above-mentioned development is preferably performed at a developer temperature in the range of 0 to 150°C.

上記の如くして得られたポリイミドのポジ型レリーフパ
ターンは、そのまま前記の各種用途に使用可能であるが
、塗膜中に残存する微量の溶媒を除去するために200
℃程度の温度で加熱処理することが好ましい、上記ポジ
型レリーフパターンは、架橋性基を有するポリイミドや
架橋性添加物を含まない本発明のポジ型感光性ポリイミ
ド組成物により形成されているため、高温時の架橋性基
揮散に伴う体積収縮が起こる慣れがなく、用途によって
は400℃程度まで加熱処理することも可能である。
The polyimide positive relief pattern obtained as described above can be used as it is for the various purposes mentioned above, but in order to remove trace amounts of solvent remaining in the coating film,
The above-mentioned positive relief pattern, which is preferably heat-treated at a temperature of about °C, is formed from the positive photosensitive polyimide composition of the present invention that does not contain a polyimide having a crosslinkable group or a crosslinkable additive. It is not accustomed to volume shrinkage due to volatilization of crosslinking groups at high temperatures, and depending on the application, heat treatment can be performed up to about 400°C.

【実施例〕【Example〕

以下に、本発明の組成物を構成する有機溶媒可溶性のポ
リイミドの製造を示す製造例、及び本発明の実施例を挙
げる。
Below, production examples showing the production of organic solvent-soluble polyimide constituting the composition of the present invention and examples of the present invention are listed.

製造例1 窒素気流下で、2,3.3’ 、4° −ビフェニルテ
トラカルボン酸二無水物6.721g及びビス(4−(
4’−アミノフェノキシ)フェニル〕スルホン10.0
62 gをN−メチル−2−ピロリドン(NMP)80
+*lに溶解し、180℃の反応温度で5時間攪拌して
、重合・イミド化反応を行った。この反応溶液をメタノ
ール中に滴下し、ポリイミドを析出させ、濾別して、ポ
リイミド粉末を得た。このポリイミド粉末の対数粘度(
濃度:ポリイミド粉末0.5 g/NMP 100+*
l、測定温度:30℃)は0.77であった。
Production Example 1 Under a nitrogen stream, 6.721 g of 2,3.3′,4°-biphenyltetracarboxylic dianhydride and bis(4-(
4'-Aminophenoxy)phenyl]sulfone 10.0
62 g of N-methyl-2-pyrrolidone (NMP) 80
+*l and stirred at a reaction temperature of 180° C. for 5 hours to perform a polymerization/imidization reaction. This reaction solution was dropped into methanol to precipitate polyimide, which was filtered to obtain polyimide powder. Logarithmic viscosity of this polyimide powder (
Concentration: Polyimide powder 0.5 g/NMP 100+*
l, measurement temperature: 30°C) was 0.77.

製造例2及び3 製造例1におけるポリイミド合成条件を、それぞれ下記
表−1に示す条件に代えた以外は製造例1と同様にして
下記表−1に示す対数粘度を有するポリイミドをそれぞ
れ得た。
Production Examples 2 and 3 Polyimides having the logarithmic viscosities shown in Table 1 below were obtained in the same manner as Production Example 1 except that the polyimide synthesis conditions in Production Example 1 were changed to the conditions shown in Table 1 below.

実施例l 5iO1を表面に被覆したガラス基板上にシランカプラ
ー(信越化学■製KBM603 : 6− (2−アミ
ノエチル)アミノプロピルトリメトキシシラン〕の0.
3%2−プロパツール溶液を2500r、p、m、で3
0秒間回転塗布した。このカプラー溶液塗布基板を、室
温で3分間風乾した後、150℃で10分間加熱処理し
、基板へのカプラー処理を行った。
Example 1 A silane coupler (KBM603 manufactured by Shin-Etsu Chemical ■: 6-(2-aminoethyl)aminopropyltrimethoxysilane) was coated on a glass substrate whose surface was coated with 5iO1.
3% 2-propertool solution at 2500 r, p, m, 3
Spin coating was performed for 0 seconds. This coupler solution-coated substrate was air-dried at room temperature for 3 minutes and then heat-treated at 150° C. for 10 minutes to perform coupler treatment on the substrate.

一方、製造例1で得られたポリイミド粉末1.4g及び
下記表−2に示すオルトキノンジアジド化合物0.14
gをNMP8.6gに溶解した後、1μmのフィルター
により濾過し、本発明のポジ型感光性ポリイミド組成物
の有機溶媒溶液を得た。
On the other hand, 1.4 g of the polyimide powder obtained in Production Example 1 and 0.14 g of the orthoquinonediazide compound shown in Table 2 below.
g was dissolved in 8.6 g of NMP and filtered through a 1 μm filter to obtain an organic solvent solution of the positive photosensitive polyimide composition of the present invention.

得られた溶液を、上記のカプラー処理を行ったガラス基
板上にスピナーを用いて2500r、p、m。
The obtained solution was applied to the above-described coupler-treated glass substrate using a spinner at 2500 r, p, m.

で30秒間回転塗布し、次いで、この塗膜を70℃で3
0分間加熱乾燥して、3.0μm厚の塗膜を得た。この
塗膜にテストマスク(凸版印刷■製、トソパンテストチ
ャートN)を介して250W高圧水銀灯の光(ミカサ■
製、マスクアライメント。
The coating was then spin-coated for 30 seconds at 70°C.
It was dried by heating for 0 minutes to obtain a coating film with a thickness of 3.0 μm. Light from a 250W high-pressure mercury lamp (Mikasa ■) was applied to this coating film through a test mask (Toppan Printing ■, Tosopan Test Chart N).
Manufacture, mask alignment.

装置MA−10型使用)型子用7秒間照射した。露光面
での紫外線強度は35On+*波長域で6.5mW/−
(@オーク製作所型、紫外線照度計UV−MOlにより
測定)であり、即ち50mj/−露光した。露光後、5
0℃に加温したモノエタノールアミンにより現像し、次
いで、室温のモノエタノールアミン引き続き室温の2−
プロパツールを用いて洗浄して、ポジ型レリーフパター
ンを得た。得られたポジ型レリーフパターンで識別でき
る最小のマスクパターンを解像度と定義すると、このパ
ターンの解像度は6μmであり、シャープな端面を持っ
ていた。また、現像後の塗膜厚は2.2μmであった。
The mold was irradiated for 7 seconds. The UV intensity on the exposed surface is 6.5mW/- in the 35On+* wavelength range.
(Measured using an ultraviolet illuminance meter UV-MOI, model @Oak Seisakusho), that is, exposed to 50 mj/-. After exposure, 5
Development with monoethanolamine warmed to 0°C followed by room temperature monoethanolamine followed by room temperature 2-
A positive relief pattern was obtained by cleaning using a propatool. Defining the resolution as the minimum mask pattern that can be identified in the positive relief pattern obtained, this pattern had a resolution of 6 μm and had a sharp end surface. Moreover, the coating film thickness after development was 2.2 μm.

次いで、このパターンを150℃で30分間加熱した後
、200℃で30分間加熱し、パターン中の残溶媒を除
去したところ、膜厚は1.9μmとなった0次いで、こ
のパターンを窒素気流下で300℃で30分間加熱した
後、400℃で30分間加熱したところ、膜厚は1.8
μmであった。400℃で加熱後もこのパターン膜は変
形、ぼやけ等が見られず、良好な耐熱性を有していた。
Next, this pattern was heated at 150°C for 30 minutes and then at 200°C for 30 minutes to remove residual solvent in the pattern, resulting in a film thickness of 1.9 μm.Next, this pattern was heated under a nitrogen stream. After heating at 300°C for 30 minutes, and then heating at 400°C for 30 minutes, the film thickness was 1.8
It was μm. Even after heating at 400° C., this patterned film showed no deformation, blurring, etc., and had good heat resistance.

実施例2〜7 下記表−2に示す配合組成とした以外は実施例1と同様
にして、本発明のポジ型感光性ポリイミド組成物の有m
溶媒溶液をそれぞれ得た。これらの溶液を用いて、下記
表−3に示す塗布回転数とし且つ下記表−3に示す現像
液を用いた以外は実施例1と同様な方法でパターン形成
及び加熱処理をそれぞれ行った。このパターン形成及び
加熱処理の結果を下記表−3に示す、実施例2〜7の何
れにおいても、シャープな端面を持つポジ型しリープパ
ターンが得られ、又400℃迄の加熱処理を経てもパタ
ーン膜は何れも変形、ぼやけ等が見られず、良好な耐熱
性を有していた。
Examples 2 to 7 Positive-working photosensitive polyimide compositions of the present invention were prepared in the same manner as in Example 1 except that the composition shown in Table 2 below was used.
Solvent solutions were obtained respectively. Using these solutions, pattern formation and heat treatment were performed in the same manner as in Example 1, except that the coating rotation speeds shown in Table 3 below were used and the developer shown in Table 3 below was used. The results of this pattern formation and heat treatment are shown in Table 3 below. In all of Examples 2 to 7, a positive leap pattern with sharp end faces was obtained, and even after heat treatment up to 400°C, None of the patterned films showed any deformation, blurring, etc., and had good heat resistance.

従来の感光性ポリイミド組成物は、100mJ/−以上
の露光を要したのに比べ、本発明のポジ型感光性ポリイ
ミド組成物は、下記表−3に示す結果から明らかなよう
に、50mJ/cdという少ない露光量でパターンが得
られるという高感度なものであり、また高温過程を経て
も膜厚変化が少なく、寸法安定性に優れることが判る。
While conventional photosensitive polyimide compositions required exposure of 100 mJ/cd or more, the positive photosensitive polyimide composition of the present invention required exposure of 50 mJ/cd, as is clear from the results shown in Table 3 below. It is highly sensitive in that a pattern can be obtained with a small amount of exposure, and it is also found that there is little change in film thickness even after going through a high temperature process, and that it has excellent dimensional stability.

〔発明の効果〕〔Effect of the invention〕

本発明のポジ型感光性ポリイミド組成物は、架橋性基を
有するポリイミドや架橋性添加物を含まないにも拘わら
ず高感度であり、且つ、架橋性基を有するポリイミドや
架橋性添加物を含まないため、耐熱性及び寸法安定性に
優れると共に貯蔵安定性にも優れ、且つ工業的に製造容
易であり、更に電気的及び機械的性質も優れたものであ
り、特に、半導体、抵抗体等の電子部品のパッシベーシ
ョン膜、多層集積回路の眉間絶縁膜、プリント回路の半
田付は保護膜、液晶用配向膜、メモリー素子のα線遮蔽
膜、電解コンデンサの絶縁膜、エツチングレジスト等の
形成材料として好適に使用することができる。
The positive photosensitive polyimide composition of the present invention has high sensitivity even though it does not contain a polyimide having a crosslinkable group or a crosslinkable additive, and it also contains a polyimide having a crosslinkable group or a crosslinkable additive. Therefore, it has excellent heat resistance and dimensional stability, as well as excellent storage stability, and is easy to manufacture industrially. Furthermore, it has excellent electrical and mechanical properties, and is particularly useful for semiconductors, resistors, etc. Suitable as a forming material for passivation films for electronic components, glabellar insulating films for multilayer integrated circuits, protective films for soldering of printed circuits, alignment films for liquid crystals, alpha-ray shielding films for memory devices, insulating films for electrolytic capacitors, etching resists, etc. It can be used for.

Claims (1)

【特許請求の範囲】[Claims] ビフェニルテトラカルボン酸成分と有機ジアミン成分と
の重縮合物からなる有機溶媒可溶性の芳香族ポリイミド
と、オルトキノンジアジド化合物とからなる、有機溶媒
可溶性のポジ型感光性ポリイミド組成物。
An organic solvent soluble positive photosensitive polyimide composition comprising an organic solvent soluble aromatic polyimide comprising a polycondensate of a biphenyltetracarboxylic acid component and an organic diamine component, and an orthoquinone diazide compound.
JP61156905A 1986-07-03 1986-07-03 Organic solvent-soluble positive photosensitive polyimide composition Expired - Lifetime JPH0644154B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61156905A JPH0644154B2 (en) 1986-07-03 1986-07-03 Organic solvent-soluble positive photosensitive polyimide composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61156905A JPH0644154B2 (en) 1986-07-03 1986-07-03 Organic solvent-soluble positive photosensitive polyimide composition

Publications (2)

Publication Number Publication Date
JPS6313032A true JPS6313032A (en) 1988-01-20
JPH0644154B2 JPH0644154B2 (en) 1994-06-08

Family

ID=15637953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61156905A Expired - Lifetime JPH0644154B2 (en) 1986-07-03 1986-07-03 Organic solvent-soluble positive photosensitive polyimide composition

Country Status (1)

Country Link
JP (1) JPH0644154B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0424940A2 (en) 1989-10-27 1991-05-02 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition
WO1991010699A1 (en) * 1990-01-18 1991-07-25 Nippon Steel Chemical Co., Ltd. Resin for protecting semiconductors
JPH05197148A (en) * 1991-08-14 1993-08-06 Internatl Business Mach Corp <Ibm> Photosensitive polyamic alkyl ester composition and using method thereof
JP2814308B2 (en) * 1992-09-24 1998-10-22 パーキン―エルマー コーポレーション Viscous electrophoretic polymer media and methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213315A (en) * 1975-07-18 1977-02-01 Gaf Corp Photoresist composition
JPS559539A (en) * 1978-07-07 1980-01-23 Asahi Chem Ind Co Ltd Heat resistant paste for photoforming
JPS59108031A (en) * 1982-12-13 1984-06-22 Ube Ind Ltd Photosensitive polyimide
JPS6094424A (en) * 1983-10-28 1985-05-27 Mitsui Toatsu Chem Inc Polymer
JPS6157620A (en) * 1984-08-30 1986-03-24 Ube Ind Ltd Photosensitive polyimide soluble in organic solvent

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213315A (en) * 1975-07-18 1977-02-01 Gaf Corp Photoresist composition
JPS559539A (en) * 1978-07-07 1980-01-23 Asahi Chem Ind Co Ltd Heat resistant paste for photoforming
JPS59108031A (en) * 1982-12-13 1984-06-22 Ube Ind Ltd Photosensitive polyimide
JPS6094424A (en) * 1983-10-28 1985-05-27 Mitsui Toatsu Chem Inc Polymer
JPS6157620A (en) * 1984-08-30 1986-03-24 Ube Ind Ltd Photosensitive polyimide soluble in organic solvent

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0424940A2 (en) 1989-10-27 1991-05-02 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition
WO1991010699A1 (en) * 1990-01-18 1991-07-25 Nippon Steel Chemical Co., Ltd. Resin for protecting semiconductors
JPH05197148A (en) * 1991-08-14 1993-08-06 Internatl Business Mach Corp <Ibm> Photosensitive polyamic alkyl ester composition and using method thereof
JP2814308B2 (en) * 1992-09-24 1998-10-22 パーキン―エルマー コーポレーション Viscous electrophoretic polymer media and methods

Also Published As

Publication number Publication date
JPH0644154B2 (en) 1994-06-08

Similar Documents

Publication Publication Date Title
US7026080B2 (en) Positive photosensitive polyimide resin composition
KR101588364B1 (en) Method for producing polyhydroxyimide and positive photosensitive resin composition containing polyhydroxyimide obtained by the production method
EP2902846B1 (en) Positive photosensitive resin composition
KR20140057961A (en) Positive polyamide varnish and polyimide film
JP2524240B2 (en) Positive photosensitive polyamideimide composition
JP2787531B2 (en) Photosensitive resin composition and protective film for electronic parts
JP2022054416A (en) Photosensitive resin composition
EP0137655B1 (en) Radiation-sensitive polymer composition
JP4771412B2 (en) Photosensitive resin and method for producing the same
JPS6313032A (en) Organic solvent soluble positive type photosensitive polyimide composition
JPH0336861B2 (en)
JP2674415B2 (en) Photosensitive resin composition and protective film for electronic parts
KR20140057957A (en) Positive polyamide varnish and polyimide film
JP2637400B2 (en) Organic solvent soluble photosensitive polyimide composition for relief pattern formation
CN113994257A (en) Photosensitive polyimide resin composition
JP2009126938A (en) Polymer and positive photosensitive resin composition
JPH03115461A (en) Photosensitive resin composition
JP6003663B2 (en) Positive photosensitive resin composition
JP2614526B2 (en) Production method of positive photosensitive polyamide-imide resin
KR20140074117A (en) Blockers of moisture-absorption, Positive polyamide varnish containing the same and polyimide film
JPS62299846A (en) Photosensitive polyimide pattern forming method
KR20140057959A (en) Positive polyamide varnish and polyimide film
JP2524241B2 (en) Positive photosensitive polyamideimide composition
JPH0833657B2 (en) Photosensitive polyimide composition
JPS6399235A (en) Photosensitive polyimide composition