JPS63107223A - Optical coupling semiconductor element for triac triggering - Google Patents

Optical coupling semiconductor element for triac triggering

Info

Publication number
JPS63107223A
JPS63107223A JP25410986A JP25410986A JPS63107223A JP S63107223 A JPS63107223 A JP S63107223A JP 25410986 A JP25410986 A JP 25410986A JP 25410986 A JP25410986 A JP 25410986A JP S63107223 A JPS63107223 A JP S63107223A
Authority
JP
Japan
Prior art keywords
voltage
triac
photothyristor
junction
optical coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25410986A
Other languages
Japanese (ja)
Other versions
JPH0575292B2 (en
Inventor
Akio Uenishi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP25410986A priority Critical patent/JPH0575292B2/ja
Publication of JPS63107223A publication Critical patent/JPS63107223A/en
Publication of JPH0575292B2 publication Critical patent/JPH0575292B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To widen the range of a load which can be controlled by connecting diodes which are short-circuited by resistances respectively to the cathodes of respective photothyristors and connecting gate resistances between the gate terminals of the photothyristor and the cathodes of the diodes.
CONSTITUTION: While a triac 103 is on, the voltage between the T2 and gate terminal of the triac 103 is abut the barrier layer voltage of the p-n junction plus α, but when an on current flows through a photothyristor 21 by about 1 mA, a forward voltage drop which is nearly as large as the carrier layer voltage of the p-n junction is generated across a diode 22 connected thereto in series. Consequently, the hold voltage of the photothyristor becomes ≥2 times the barrier layer voltage of the p-n junction on condition that the hold voltage is about 1 mA, so resetting is securely performed when the voltage is nearly as high as the voltage between the T2 and gate terminal of the triac 103. The same operation is performed even in the opposite polarity state.
COPYRIGHT: (C)1988,JPO&Japio
JP25410986A 1986-10-23 1986-10-23 Expired - Lifetime JPH0575292B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25410986A JPH0575292B2 (en) 1986-10-23 1986-10-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25410986A JPH0575292B2 (en) 1986-10-23 1986-10-23

Publications (2)

Publication Number Publication Date
JPS63107223A true JPS63107223A (en) 1988-05-12
JPH0575292B2 JPH0575292B2 (en) 1993-10-20

Family

ID=17260346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25410986A Expired - Lifetime JPH0575292B2 (en) 1986-10-23 1986-10-23

Country Status (1)

Country Link
JP (1) JPH0575292B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0492117A2 (en) * 1990-12-24 1992-07-01 Motorola, Inc. Current source with adjustable temperature variation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913422A (en) * 1982-07-14 1984-01-24 Matsushita Electric Ind Co Ltd Driving circuit of gate turn off thyristor
JPS5943630A (en) * 1982-09-02 1984-03-10 Sharp Corp Solid-state relay

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913422A (en) * 1982-07-14 1984-01-24 Matsushita Electric Ind Co Ltd Driving circuit of gate turn off thyristor
JPS5943630A (en) * 1982-09-02 1984-03-10 Sharp Corp Solid-state relay

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0492117A2 (en) * 1990-12-24 1992-07-01 Motorola, Inc. Current source with adjustable temperature variation

Also Published As

Publication number Publication date
JPH0575292B2 (en) 1993-10-20

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