JPS6310229B2 - - Google Patents

Info

Publication number
JPS6310229B2
JPS6310229B2 JP16979085A JP16979085A JPS6310229B2 JP S6310229 B2 JPS6310229 B2 JP S6310229B2 JP 16979085 A JP16979085 A JP 16979085A JP 16979085 A JP16979085 A JP 16979085A JP S6310229 B2 JPS6310229 B2 JP S6310229B2
Authority
JP
Japan
Prior art keywords
wire
temperature
single crystal
pure
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16979085A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6230863A (ja
Inventor
Yukio Ooba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO KINZOKU ZAIRYO GIJUTSU KENKYU SHOCHO
Original Assignee
KAGAKU GIJUTSUCHO KINZOKU ZAIRYO GIJUTSU KENKYU SHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO KINZOKU ZAIRYO GIJUTSU KENKYU SHOCHO filed Critical KAGAKU GIJUTSUCHO KINZOKU ZAIRYO GIJUTSU KENKYU SHOCHO
Priority to JP16979085A priority Critical patent/JPS6230863A/ja
Publication of JPS6230863A publication Critical patent/JPS6230863A/ja
Publication of JPS6310229B2 publication Critical patent/JPS6310229B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP16979085A 1985-08-02 1985-08-02 純Mo単結晶線の製造法 Granted JPS6230863A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16979085A JPS6230863A (ja) 1985-08-02 1985-08-02 純Mo単結晶線の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16979085A JPS6230863A (ja) 1985-08-02 1985-08-02 純Mo単結晶線の製造法

Publications (2)

Publication Number Publication Date
JPS6230863A JPS6230863A (ja) 1987-02-09
JPS6310229B2 true JPS6310229B2 (enrdf_load_stackoverflow) 1988-03-04

Family

ID=15892928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16979085A Granted JPS6230863A (ja) 1985-08-02 1985-08-02 純Mo単結晶線の製造法

Country Status (1)

Country Link
JP (1) JPS6230863A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63241149A (ja) * 1987-03-30 1988-10-06 Toshiba Corp モリブデン巨大粒または単結晶およびその製造方法

Also Published As

Publication number Publication date
JPS6230863A (ja) 1987-02-09

Similar Documents

Publication Publication Date Title
US7922812B2 (en) Method for growing single crystals of metals
US4140570A (en) Method of growing single crystal silicon by the Czochralski method which eliminates the need for post growth annealing for resistivity stabilization
JP2005015917A (ja) 高融点金属線状材およびその製造方法
JP4808835B2 (ja) X線管用途のための陰極用ワイヤ・フィラメント
JPS6310229B2 (enrdf_load_stackoverflow)
US3694269A (en) Method for solid state growth of iron single crystals
US1461140A (en) Method of treating filaments for incandescent electric lamps
Veigel et al. Preparation of High‐Purity Thorium by the Iodide Process
JPH0367994B2 (enrdf_load_stackoverflow)
US3075120A (en) Lamp, filamentary wire and method of making said wire
JP2832241B2 (ja) ▲ii▼―▲vi▼族化合物半導体結晶の製造方法
US2076381A (en) Process for manufacturing metal bodies
JP2602857B2 (ja) 半導体結晶基板の改善方法
JPH048906B2 (enrdf_load_stackoverflow)
JP2612033B2 (ja) シリコン単結晶育成方法
CN110129701A (zh) 一种难熔金属再结晶退火的方法
JPS58120591A (ja) 単結晶の製造方法
JPS63198335A (ja) シリコン基板の製造方法
GB1314854A (en) Process for improving after initial crystal growth the light emissive properties of a monocrystal
JPS63241149A (ja) モリブデン巨大粒または単結晶およびその製造方法
JP2612019B2 (ja) 単結晶引上装置
JPH05102167A (ja) シリコンの熱処理方法
JPH02254285A (ja) モリブデンルツボとそのモリブデンルツボ用素材の製造方法
US1461100A (en) Method of treating filaments for incandescent electric lamps
JPH10303138A (ja) Soi基板の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term