JPS6292323A - Dry etching method - Google Patents

Dry etching method

Info

Publication number
JPS6292323A
JPS6292323A JP23267585A JP23267585A JPS6292323A JP S6292323 A JPS6292323 A JP S6292323A JP 23267585 A JP23267585 A JP 23267585A JP 23267585 A JP23267585 A JP 23267585A JP S6292323 A JPS6292323 A JP S6292323A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
pt layer
gas
pt
layer
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23267585A
Inventor
Tadahiko Murata
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To prevent the formation of a horn shape in the re-adhesion of a Pt layer by using a gas for chlorine series as the principal ingredient as an etching gas in the reactive ion etching of the Pt layer.
CONSTITUTION: A Ti layer 2 and a Pt layer 3 are shaped onto a substrate 1. An Au film 4 is formed selectively onto the Pt film 3. When the Pt layer 3 is etched selectively by employing the Au film 4, a chlorine group gas is used as the principal ingredient as an etching gas. The chlorine group gas consists of at least one kind of Cl2, Cl4, SiCl4, CCl2F2 and CClF2. Accordingly, the formation of a horn shape in the re-adhesion of the Pt layer 3 is prevented.
COPYRIGHT: (C)1987,JPO&Japio
JP23267585A 1985-10-17 1985-10-17 Dry etching method Pending JPS6292323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23267585A JPS6292323A (en) 1985-10-17 1985-10-17 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23267585A JPS6292323A (en) 1985-10-17 1985-10-17 Dry etching method

Publications (1)

Publication Number Publication Date
JPS6292323A true true JPS6292323A (en) 1987-04-27

Family

ID=16943029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23267585A Pending JPS6292323A (en) 1985-10-17 1985-10-17 Dry etching method

Country Status (1)

Country Link
JP (1) JPS6292323A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0284734A (en) * 1987-10-27 1990-03-26 Nec Corp Manufacture of semiconductor device
JPH07130712A (en) * 1993-11-02 1995-05-19 Nec Corp Method for etching pt-based alloy
US5426331A (en) * 1993-03-19 1995-06-20 Nec Corporation Semiconductor device with multi-layered heat-resistive electrode in titanium-titanium nitride-plantinum-gold system
US5618754A (en) * 1994-12-22 1997-04-08 Nec Corporation Method of fabricating a semiconductor device having an Au electrode
EP0795896A2 (en) * 1996-03-15 1997-09-17 ROHM Co., Ltd. Dry etching method
US5679213A (en) * 1993-11-08 1997-10-21 Fujitsu Limited Method for patterning a metal film
US5840200A (en) * 1996-01-26 1998-11-24 Matsushita Electronics Corporation Method of manufacturing semiconductor devices
US5976394A (en) * 1996-04-17 1999-11-02 Samsung Electronics Co., Ltd. Method for dry-etching a platinum thin film

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0284734A (en) * 1987-10-27 1990-03-26 Nec Corp Manufacture of semiconductor device
US5426331A (en) * 1993-03-19 1995-06-20 Nec Corporation Semiconductor device with multi-layered heat-resistive electrode in titanium-titanium nitride-plantinum-gold system
JPH07130712A (en) * 1993-11-02 1995-05-19 Nec Corp Method for etching pt-based alloy
US5679213A (en) * 1993-11-08 1997-10-21 Fujitsu Limited Method for patterning a metal film
US5618754A (en) * 1994-12-22 1997-04-08 Nec Corporation Method of fabricating a semiconductor device having an Au electrode
US5840200A (en) * 1996-01-26 1998-11-24 Matsushita Electronics Corporation Method of manufacturing semiconductor devices
EP0795896A2 (en) * 1996-03-15 1997-09-17 ROHM Co., Ltd. Dry etching method
EP0795896A3 (en) * 1996-03-15 1999-06-02 Plasma System Corporation Dry etching method
US5976394A (en) * 1996-04-17 1999-11-02 Samsung Electronics Co., Ltd. Method for dry-etching a platinum thin film

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