JPS6290260A - Antiwear protective film for thermal head - Google Patents

Antiwear protective film for thermal head

Info

Publication number
JPS6290260A
JPS6290260A JP60228821A JP22882185A JPS6290260A JP S6290260 A JPS6290260 A JP S6290260A JP 60228821 A JP60228821 A JP 60228821A JP 22882185 A JP22882185 A JP 22882185A JP S6290260 A JPS6290260 A JP S6290260A
Authority
JP
Japan
Prior art keywords
protective film
film
thermal head
resistance
increases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60228821A
Other languages
Japanese (ja)
Inventor
Kunihiro Nagao
長尾 邦廣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP60228821A priority Critical patent/JPS6290260A/en
Publication of JPS6290260A publication Critical patent/JPS6290260A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Abstract

PURPOSE:To provide a thermal head enhanced in hardness and hardly generating a crack due to recrystallization and having excellent acid/alkali resistance, by providing the antiwear protective film for the thermal head based on Si, Al, O, N and M (wherein M is a rare earth element and especially at least one element selected from Y, La, Ce, Gd, Nd, Sm and Er). CONSTITUTION:An antiwear protective film for a thermal head is composed of an Si-Al-O-N-M type substance. Herein, M is at least one rare earth element pref. at least one element selected from Y, La, Ce, Gd, Dy, Yb, Nd, Sm and Er. More pref., said protective film is constituted of a substance represented by SiAlaObNcMd (wherein a=0.05-0.5, b=0.05-0.5, c=1.0-2.0 and d=0.01-0.2). If Al is too little, the fragility of the film increases and, if too much, heat conductivity increases and printing sharpness is reduced. O and N have the function of increasing the hardness of the film but, if they are too little, the film becomes flexible and, if too much, the film becomes porous and fragile. M enhances resistance against scratch and increases cracking resistance. Various characteristics are satisfied in a range imparted to a, b, c, d.

Description

【発明の詳細な説明】 〔技術分野〕 本発明はサーマルヘッド用耐摩耗性保護膜に関する。[Detailed description of the invention] 〔Technical field〕 The present invention relates to a wear-resistant protective film for a thermal head.

〔従来技術とその問題点〕[Prior art and its problems]

サーマルヘッドはコンピュータ、ワードプロセッサ、フ
ァクシミル等の印字ヘッドとして広く用いられている。
Thermal heads are widely used as print heads in computers, word processors, facsimiles, and the like.

サーマルヘッドはポリシリコン等の抵抗発熱体のドツト
を多数配列し、それらを選択的に通電することにより印
字リボンを用紙に熱転写して印字するように構成したも
のである。用紙はサーマルヘッドの面に摺接しながら移
送されるから、耐摩耗性が高い保護膜により抵抗発熱体
の表面を保設する必要がある。
The thermal head is constructed by arranging a large number of dots of resistive heating elements such as polysilicon, and selectively energizing them to thermally transfer a printing ribbon onto paper to print. Since the paper is transferred while sliding against the surface of the thermal head, it is necessary to protect the surface of the resistance heating element with a protective film having high wear resistance.

サーマルヘッドにおけるスポット状印字要素は第1図に
示されているように、下から順にアルミナ等の基板1、
蓄A8JTIのブレースガラス2、ポリシリコン等の発
熱体層3、i4極4.5、及び耐摩耗性保護膜6より成
る。図の7は発熱部となる。
As shown in FIG. 1, the spot-like printing elements in the thermal head are, in order from the bottom, a substrate 1 made of alumina, etc.
It consists of a brace glass 2 made of A8JTI, a heating layer 3 made of polysilicon or the like, an i4 pole 4.5, and a wear-resistant protective film 6. 7 in the figure is a heat generating part.

保護膜6には一般に硬度が高く、熱によるクラックが発
生せず、摩耗し難く、シかも湿気やアルカリ等に対して
安定なことが要求され、従来種々の材料が研究されてい
る。
The protective film 6 is generally required to have high hardness, not to crack due to heat, to be resistant to wear, and to be stable against moisture, alkali, etc., and various materials have been researched in the past.

従来使用されている耐摩耗性保護膜にはT a、 0.
、S I 0% A I、0m 、B、0% S i 
0XNy  等が知られている。しかし、これらの保9
膜には一長一短があって未だ充分に満足でない* TI
L、O,はビッカース硬度がやや低く (600〜80
0kf/mm” ) 、耐摩耗性に問題があり、また抵
抗発熱体を酸化する傾向があるのでs+o、7Δを耐摩
耗性保護膜の下に介在する必要があり、低温で再結晶化
し易く応力変化によるクランクが発生し易い欠点があり
、さらに抵抗発熱体の下地であるアルミナ基板及びグレ
ーズ層より熱膨張係数がかなり小さく熱パルスの印加で
クラックを生じ易い。一方、SiCは電気抵抗が低く、
電気化学的な反応により耐摩耗性が低下するので、si
o、等の膜を下層として形成する必要があり、またクラ
ックが発生し易い。またA 110g 、B4C等は内
部応力が大きくクラックが発生し易い。さらに、S ’
 Ox N yは熱膨張係数が下地よりもかなり小さく
、熱パルスの印加によりクラックを生じる問題がある。
Conventionally used wear-resistant protective films have T a, 0.
, S I 0% A I, 0m , B, 0% S i
0XNy etc. are known. However, these
The membrane has its advantages and disadvantages, and I am still not fully satisfied with it* TI
L, O, have slightly lower Vickers hardness (600-80
0kf/mm"), there is a problem with wear resistance, and there is a tendency to oxidize the resistance heating element, so it is necessary to interpose s+o, 7Δ under the wear-resistant protective film, and it is easy to recrystallize at low temperatures and stress SiC has the disadvantage of being prone to cracking due to changes in temperature, and also has a significantly smaller coefficient of thermal expansion than the alumina substrate and glaze layer underlying the resistance heating element, making it more likely to crack when a heat pulse is applied.On the other hand, SiC has a low electrical resistance;
Since wear resistance decreases due to electrochemical reactions, Si
It is necessary to form a film such as 0, etc. as a lower layer, and cracks are likely to occur. Further, A 110g, B4C, etc. have large internal stress and are likely to crack. Furthermore, S'
OxNy has a coefficient of thermal expansion that is considerably smaller than that of the underlying material, and there is a problem in that it may crack when a heat pulse is applied to it.

従って、耐摩耗性が高いだけでなく耐クラツク性、耐熱
疲労性にすぐれた保護膜が要請されている。
Therefore, there is a need for a protective film that not only has high wear resistance but also excellent crack resistance and thermal fatigue resistance.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、耐クラツク性が高く、耐熱疲労性にす
ぐれたサーマルヘッド用耐摩耗性保護膜を提供すること
である。
An object of the present invention is to provide a wear-resistant protective film for a thermal head that has high crack resistance and excellent thermal fatigue resistance.

〔発明の概要〕[Summary of the invention]

本発明のサーマルヘッド用耐摩耗性保護膜は81、AI
、0、N及びM(ここにMは希土類元素、特にYSLa
qCesGCNd、Sm5Er  の少なくとも一種)
を主成分とすることを特徴とする。より具体的には本発
明の保護膜は 5iAllLO,NcMd (ただしMは上記を同じ意味を有し、a==0.05〜
α5、b=Q、05〜α5、c=tO〜2.0及びd=
・Q、01〜Q、2)で表わされる組成を有する物質よ
り成ることを特徴とする。
The wear-resistant protective film for thermal heads of the present invention is 81, AI
, 0, N and M (where M is a rare earth element, especially YSLa
at least one of qCesGCNd, Sm5Er)
It is characterized by having as a main component. More specifically, the protective film of the present invention is 5iAllLO, NcMd (where M has the same meaning as above, and a==0.05~
α5, b=Q, 05~α5, c=tO~2.0 and d=
・It is characterized by being made of a substance having a composition represented by Q, 01 to Q, 2).

本発明の耐摩耗性保護膜はTa、01  よりも高い硬
度及び低い摩耗性を有し、熱膨張係数がアルミナ基板と
ほぼ同等であるため、耐クラツク性が高い。
The wear-resistant protective film of the present invention has higher hardness and lower wear resistance than Ta,01, and has a coefficient of thermal expansion almost equal to that of the alumina substrate, so it has high crack resistance.

〔発明の構成の詳細な説明〕[Detailed explanation of the structure of the invention]

本発明のサーマルヘッド用耐摩耗性保護膜は、S51−
Al−0−N−系の物!(ただしMは希土類元素の少な
くとも1種、好ましくはYN L a % Ce %G
d1D7%YbsNdSSmSErより選ばれた少なく
とも1橿)より成り、より好ましくはSIAlaObN
cMdで表わされ、a=α05〜0.5、b=l]、0
5〜α5、c=tO〜2.0及びd=0.01〜α2な
る含有割合を有する物質より構成される。AIは少な過
ぎると膜の脆さが増し、多過ぎると熱伝導率が増して印
字の鋭さが減じる。0、Nは膜の硬度を上げるが、少な
過ぎると暎が柔かくなり、多過ぎると多孔となり脆くな
る。Mは引掻きに対する抵抗性を向上し、耐クラツク性
を増す。しかし少な過ぎても多過ぎても引掻き強度は低
くなる。上記を総合すると、上記aXbz  Qz d
に対して与えた範囲で種々の特性が満足される。
The wear-resistant protective film for thermal heads of the present invention is S51-
Al-0-N- type thing! (However, M is at least one rare earth element, preferably YNL a % Ce % G
d1D7%YbsNdSSmSEr), more preferably SIAlaObN
expressed in cMd, a=α05~0.5, b=l], 0
5 to α5, c=tO to 2.0, and d=0.01 to α2. Too little AI increases the brittleness of the film, while too much AI increases thermal conductivity and reduces the sharpness of printing. 0 and N increase the hardness of the film, but too little will make the film soft, while too much will make it porous and brittle. M improves scratch resistance and increases crack resistance. However, if it is too small or too large, the scratch strength will be lowered. Putting the above together, the above aXbz Qz d
Various characteristics are satisfied within the range given for .

本発明の保護膜は例えばスパッタ法を用いて成(漢する
ことができる。この方法によるときは、成膜原料として
S I O! % A I2O3・313〜41Yt 
O3%L a!oll 、Ce2Q3 、G d 03
等の粉末を用い、これらち11.’i幻虚り一代ドナー
蓄申のソ1シヘ+で配へ1.− プ1)7してターゲッ
トとし、またArガス及び必要ならばざらにO,、N、
ガスを用い、RF?l!力を加えてターゲットをAr 
スパッタし、下地例えばアルミナ基板上にガラスグレー
ズ層を設けたものの上にS51−Al−0−N−系の保
護膜を成膜する。
The protective film of the present invention can be formed using, for example, a sputtering method. When using this method, SIO! % A I2O3.313-41Yt
O3%L a! oll , Ce2Q3 , G d 03
Using powders such as 11. 'i Illusion, first generation donor accumulation, so 1 shihe +, 1. - 1) 7 as a target, and Ar gas and if necessary coarsely O, N,
Using gas, RF? l! Apply force to Ar target
By sputtering, an S51-Al-0-N--based protective film is formed on a base, for example, an alumina substrate on which a glass glaze layer is provided.

〔実施例〕〔Example〕

S I O@ 、A 1101 、S 11N4 、Y
2O2を%/l/比9ニア:8:2の割合で混合し、タ
ーゲットとしたものを、投入電力t 5 KW SA 
r圧2P1%基板温度350℃でRFスパッタして4.
5μmの厚さに成膜して耐摩耗性膜とした。Arガスに
適宜01、N、を混入して反応性スパッタとし、組成の
調整をした。
S I O @ , A 1101 , S 11N4 , Y
2O2 was mixed at a ratio of %/l/ratio 9nia:8:2 and used as a target, the input power was t 5 KW SA
4. RF sputtering at r pressure 2P1% substrate temperature 350°C.
A film was formed to a thickness of 5 μm to obtain a wear-resistant film. The composition was adjusted by appropriately mixing 01 and N into Ar gas to obtain reactive sputtering.

得られた5iA1 aObNcY、  膜に対して種々
の試験を行った6a==α05〜α5、b=0.o5〜
α5、c=10〜2.0及びd=Q、01〜a、2のも
のは次の特性を示した。
The obtained 5iA1 aObNcY film was subjected to various tests. 6a==α05 to α5, b=0. o5~
α5, c=10-2.0 and d=Q, 01-a, 2 exhibited the following characteristics.

t ビッカース硬度は1600〜18001g/yym
!であり、T a 10 B  よりも硬い。
t Vickers hardness is 1600-18001g/yym
! and is harder than T a 10 B .

2 表面の引掻き強度は460gであり、T1206の
270yよりも大きい。なお、この引掻き強度はダイヤ
モンド針を用いた引掻き試験機(新来科学(株)製HE
IDON−14型)によって測定した。
2 The scratch strength of the surface is 460g, which is greater than 270y of T1206. This scratch strength was measured using a scratch tester using a diamond needle (HE manufactured by Shinraikagaku Co., Ltd.).
IDON-14 type).

h  球径12mmの白球にダイヤモンドペーストを付
着させた耐摩耗試験では30秒であり、’ra!o、 
 の7秒より長い。
h In an abrasion test using a white ball with a diameter of 12 mm and diamond paste attached, it was 30 seconds, and 'ra! o,
longer than 7 seconds.

4、熱パルスを加えても電子線回折でハローが見られず
、再結晶が生じていない。
4. Even when a heat pulse is applied, no halo is observed in electron diffraction, and no recrystallization has occurred.

5、  H,So、(90°C)、HNO3(50℃)
、Na0H(80°C)に1時間浸しても膜べりは起ら
ず化学的に安定であった。
5, H, So, (90°C), HNO3 (50°C)
, and was chemically stable without film deterioration even after being immersed in Na0H (80°C) for 1 hour.

6 比抵抗は1011Ω創以上であり、電気的に安定で
ある。
6. Specific resistance is 1011Ω or more and electrically stable.

Z 線熱膨眼係数が7.2 X f O−”であり、ア
ルミ基板の7.5 X 10−”及びグレーズの6.8
×10−6と近いため、熱疲労によるクラックが生じな
い。また、Yの代りにLa5Ces Gd5D y %
 Y b −、N d % S m SE rを用いて
も同様な効果が得られた。
The Z linear thermal expansion coefficient is 7.2 x f O-'', 7.5 x 10-'' for the aluminum substrate and 6.8 for the glaze.
Since the value is close to x10-6, no cracks occur due to thermal fatigue. Also, instead of Y, La5Ces Gd5D y %
Similar effects were obtained using Yb-, Nd% SmSEr.

〔作用効果〕[Effect]

上の実施例から明らかなように、本発明のサーマルヘッ
ド用耐保倣膜は、硬度が高く、引掻き強度も高く、再結
晶化によるクラックが発生し難く、耐酸・耐アルカリ性
にすぐれ、絶縁性も良く、また熱疲労によるクラックの
発生も少ないというすぐれた作用効果を有するものであ
る。
As is clear from the above examples, the anti-scanning film for thermal heads of the present invention has high hardness, high scratch strength, is resistant to cracking due to recrystallization, has excellent acid and alkali resistance, and has excellent insulation properties. It also has the excellent effect of reducing the occurrence of cracks due to thermal fatigue.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はサーマルヘッドの基本構造を示す断面図である
FIG. 1 is a sectional view showing the basic structure of a thermal head.

Claims (1)

【特許請求の範囲】 1、Si、Al、O、N及びM(ここにMは希土類元素
の少なくとも1種)を主たる構成元素としたサーマルヘ
ッド用耐摩耗性保護膜。 2、SiAl_aO_bN_cM_d(ただしa=0.
05〜0.5、b=0.05〜0.5、c=1.0〜2
.0及びd=0.01〜0.2、MはY、La、Ce、
Gd、Dy、Nd、Sm、Er及びYbの少なくとも1
種)で表わされる組成を有する前記第1項記載の耐摩耗
性保護膜。
[Claims] 1. A wear-resistant protective film for a thermal head whose main constituent elements are Si, Al, O, N, and M (where M is at least one rare earth element). 2, SiAl_aO_bN_cM_d (where a=0.
05~0.5, b=0.05~0.5, c=1.0~2
.. 0 and d=0.01-0.2, M is Y, La, Ce,
At least one of Gd, Dy, Nd, Sm, Er and Yb
2. The wear-resistant protective film according to item 1 above, having a composition represented by:
JP60228821A 1985-10-16 1985-10-16 Antiwear protective film for thermal head Pending JPS6290260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60228821A JPS6290260A (en) 1985-10-16 1985-10-16 Antiwear protective film for thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60228821A JPS6290260A (en) 1985-10-16 1985-10-16 Antiwear protective film for thermal head

Publications (1)

Publication Number Publication Date
JPS6290260A true JPS6290260A (en) 1987-04-24

Family

ID=16882386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60228821A Pending JPS6290260A (en) 1985-10-16 1985-10-16 Antiwear protective film for thermal head

Country Status (1)

Country Link
JP (1) JPS6290260A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62121069A (en) * 1985-11-21 1987-06-02 Mitsubishi Metal Corp Thermal recording head
US4862195A (en) * 1987-03-05 1989-08-29 Alps Electric Co., Ltd. Overcoating layer for thermal printing head
US4985712A (en) * 1988-10-31 1991-01-15 Kabushiki Kaisha Toshiba Thermal head
US6380687B1 (en) 1999-06-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. EL display device and electric device
US6384818B1 (en) 1996-09-27 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of fabricating the same
US6420200B1 (en) 1999-06-28 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6433487B1 (en) 1999-09-03 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. EL display device and manufacturing method thereof
US6440877B1 (en) 1999-06-28 2002-08-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6445005B1 (en) 1999-09-17 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. EL display device
US6452341B1 (en) 1999-06-21 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US6680577B1 (en) 1999-11-29 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic apparatus
US6689492B1 (en) 1999-06-04 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6774574B1 (en) 1999-06-23 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6830494B1 (en) 1999-10-12 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US6936846B2 (en) 2000-04-17 2005-08-30 Semiconductor Energy Laboratory Co., Ltd. Self-luminous device and electric machine using the same
US7115434B2 (en) 1999-10-13 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Method for precisely forming light emitting layers in a semiconductor device
US7408534B2 (en) 1998-06-17 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Reflective type semiconductor display device
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Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62121069A (en) * 1985-11-21 1987-06-02 Mitsubishi Metal Corp Thermal recording head
US4862195A (en) * 1987-03-05 1989-08-29 Alps Electric Co., Ltd. Overcoating layer for thermal printing head
US4985712A (en) * 1988-10-31 1991-01-15 Kabushiki Kaisha Toshiba Thermal head
US6765562B2 (en) 1996-09-27 2004-07-20 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of fabricating the same
US6384818B1 (en) 1996-09-27 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of fabricating the same
US7268777B2 (en) 1996-09-27 2007-09-11 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of fabricating the same
US7408534B2 (en) 1998-06-17 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Reflective type semiconductor display device
US9837451B2 (en) 1999-04-27 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus
US7147530B2 (en) 1999-06-04 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device and method of manufacturing the same
US9293726B2 (en) 1999-06-04 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US9178177B2 (en) 1999-06-04 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6689492B1 (en) 1999-06-04 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6844683B2 (en) 1999-06-21 2005-01-18 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US9659524B2 (en) 1999-06-21 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device including substrate having cavity, and method for fabricating the light-emitting device
US8941565B2 (en) 1999-06-21 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US7312572B2 (en) 1999-06-21 2007-12-25 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
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