JPS6290260A - Antiwear protective film for thermal head - Google Patents

Antiwear protective film for thermal head

Info

Publication number
JPS6290260A
JPS6290260A JP22882185A JP22882185A JPS6290260A JP S6290260 A JPS6290260 A JP S6290260A JP 22882185 A JP22882185 A JP 22882185A JP 22882185 A JP22882185 A JP 22882185A JP S6290260 A JPS6290260 A JP S6290260A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
thermal head
protective film
antiwear
increases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22882185A
Inventor
Kunihiro Nagao
Original Assignee
Tdk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L49/00Solid state devices not provided for in groups H01L27/00 - H01L47/00 and H01L51/00 and not provided for in any other subclass; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L49/02Thin-film or thick-film devices

Abstract

PURPOSE:To provide a thermal head enhanced in hardness and hardly generating a crack due to recrystallization and having excellent acid/alkali resistance, by providing the antiwear protective film for the thermal head based on Si, Al, O, N and M (wherein M is a rare earth element and especially at least one element selected from Y, La, Ce, Gd, Nd, Sm and Er). CONSTITUTION:An antiwear protective film for a thermal head is composed of an Si-Al-O-N-M type substance. Herein, M is at least one rare earth element pref. at least one element selected from Y, La, Ce, Gd, Dy, Yb, Nd, Sm and Er. More pref., said protective film is constituted of a substance represented by SiAlaObNcMd (wherein a=0.05-0.5, b=0.05-0.5, c=1.0-2.0 and d=0.01-0.2). If Al is too little, the fragility of the film increases and, if too much, heat conductivity increases and printing sharpness is reduced. O and N have the function of increasing the hardness of the film but, if they are too little, the film becomes flexible and, if too much, the film becomes porous and fragile. M enhances resistance against scratch and increases cracking resistance. Various characteristics are satisfied in a range imparted to a, b, c, d.
JP22882185A 1985-10-16 1985-10-16 Antiwear protective film for thermal head Pending JPS6290260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22882185A JPS6290260A (en) 1985-10-16 1985-10-16 Antiwear protective film for thermal head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22882185A JPS6290260A (en) 1985-10-16 1985-10-16 Antiwear protective film for thermal head

Publications (1)

Publication Number Publication Date
JPS6290260A true true JPS6290260A (en) 1987-04-24

Family

ID=16882386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22882185A Pending JPS6290260A (en) 1985-10-16 1985-10-16 Antiwear protective film for thermal head

Country Status (1)

Country Link
JP (1) JPS6290260A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62121069A (en) * 1985-11-21 1987-06-02 Mitsubishi Metal Corp Thermal recording head
US4862195A (en) * 1987-03-05 1989-08-29 Alps Electric Co., Ltd. Overcoating layer for thermal printing head
US4985712A (en) * 1988-10-31 1991-01-15 Kabushiki Kaisha Toshiba Thermal head
US6380687B1 (en) 1999-06-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. EL display device and electric device
US6384818B1 (en) 1996-09-27 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of fabricating the same
US6420200B1 (en) 1999-06-28 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6433487B1 (en) 1999-09-03 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. EL display device and manufacturing method thereof
US6440877B1 (en) 1999-06-28 2002-08-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6445005B1 (en) 1999-09-17 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. EL display device
US6452341B1 (en) 1999-06-21 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US6680577B1 (en) 1999-11-29 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic apparatus
US6689492B1 (en) 1999-06-04 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6774574B1 (en) 1999-06-23 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6830494B1 (en) 1999-10-12 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US6936846B2 (en) 2000-04-17 2005-08-30 Semiconductor Energy Laboratory Co., Ltd. Self-luminous device and electric machine using the same
US7115434B2 (en) 1999-10-13 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Method for precisely forming light emitting layers in a semiconductor device
US7408534B2 (en) 1998-06-17 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Reflective type semiconductor display device
US9293726B2 (en) 1999-06-04 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US9837451B2 (en) 1999-04-27 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus

Cited By (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62121069A (en) * 1985-11-21 1987-06-02 Mitsubishi Metal Corp Thermal recording head
US4862195A (en) * 1987-03-05 1989-08-29 Alps Electric Co., Ltd. Overcoating layer for thermal printing head
US4985712A (en) * 1988-10-31 1991-01-15 Kabushiki Kaisha Toshiba Thermal head
US7268777B2 (en) 1996-09-27 2007-09-11 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of fabricating the same
US6384818B1 (en) 1996-09-27 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of fabricating the same
US6765562B2 (en) 1996-09-27 2004-07-20 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of fabricating the same
US7408534B2 (en) 1998-06-17 2008-08-05 Semiconductor Energy Laboratory Co., Ltd. Reflective type semiconductor display device
US9837451B2 (en) 1999-04-27 2017-12-05 Semiconductor Energy Laboratory Co., Ltd. Electronic device and electronic apparatus
US9293726B2 (en) 1999-06-04 2016-03-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
US9178177B2 (en) 1999-06-04 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US7147530B2 (en) 1999-06-04 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence display device and method of manufacturing the same
US6689492B1 (en) 1999-06-04 2004-02-10 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6452341B1 (en) 1999-06-21 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US7466293B2 (en) 1999-06-21 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US7312572B2 (en) 1999-06-21 2007-12-25 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US7821200B2 (en) 1999-06-21 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US9659524B2 (en) 1999-06-21 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device including substrate having cavity, and method for fabricating the light-emitting device
US6844683B2 (en) 1999-06-21 2005-01-18 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
US8941565B2 (en) 1999-06-21 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. EL display device, driving method thereof, and electronic equipment provided with the EL display device
EP2372682A2 (en) 1999-06-23 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Active matrix EL display device
US7982222B2 (en) 1999-06-23 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6774574B1 (en) 1999-06-23 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6777887B2 (en) 1999-06-23 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US7358531B2 (en) 1999-06-23 2008-04-15 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US7548027B2 (en) 1999-06-28 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6380687B1 (en) 1999-06-28 2002-04-30 Semiconductor Energy Laboratory Co., Ltd. EL display device and electric device
US6958251B2 (en) 1999-06-28 2005-10-25 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device using a printing method
US6552496B2 (en) 1999-06-28 2003-04-22 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US7256422B2 (en) 1999-06-28 2007-08-14 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6774573B2 (en) 1999-06-28 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic device
US6872672B2 (en) 1999-06-28 2005-03-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US7342251B2 (en) 1999-06-28 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6420200B1 (en) 1999-06-28 2002-07-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US6440877B1 (en) 1999-06-28 2002-08-27 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
EP2262031A2 (en) 1999-06-28 2010-12-15 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device
US6555969B2 (en) 1999-09-03 2003-04-29 Semiconductor Energy Laboratory Co., Ltd. EL display device and manufacturing method thereof
US6433487B1 (en) 1999-09-03 2002-08-13 Semiconductor Energy Laboratory Co., Ltd. EL display device and manufacturing method thereof
US8198806B2 (en) 1999-09-03 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. EL display device and manufacturing method thereof
US7710028B2 (en) 1999-09-03 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. EL display device having pixel electrode with projecting portions and manufacturing method thereof
US8358063B2 (en) 1999-09-03 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. EL display device and manufacturing method thereof
US7427834B2 (en) 1999-09-03 2008-09-23 Semiconductor Energy Laboratory Co., Ltd. Display device with anode contacting input-output wiring through opening in insulating film
US8735900B2 (en) 1999-09-17 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. EL display device
EP2259322A2 (en) 1999-09-17 2010-12-08 Semiconductor Energy Laboratory Co., Ltd. EL display device
US7952103B2 (en) 1999-09-17 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. EL display device and method for manufacturing the same
US9059049B2 (en) 1999-09-17 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. EL display device
US9431470B2 (en) 1999-09-17 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Display device
US8183571B2 (en) 1999-09-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. EL display device and method for manufacturing the same
US9735218B2 (en) 1999-09-17 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. EL display device and method for manufacturing the same
US6894312B2 (en) 1999-09-17 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. EL display device
US8450745B2 (en) 1999-09-17 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. EL display device
US7518146B2 (en) 1999-09-17 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. EL display device including color filter and light shielding film
US6445005B1 (en) 1999-09-17 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. EL display device
US6830494B1 (en) 1999-10-12 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US7115434B2 (en) 1999-10-13 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Method for precisely forming light emitting layers in a semiconductor device
US6680577B1 (en) 1999-11-29 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic apparatus
US7061186B2 (en) 1999-11-29 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. EL display device and electronic apparatus
EP2256718A2 (en) 1999-11-29 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. El display device and electronic apparatus
US6936846B2 (en) 2000-04-17 2005-08-30 Semiconductor Energy Laboratory Co., Ltd. Self-luminous device and electric machine using the same
US7142781B2 (en) 2000-04-17 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Self-luminous device and electric machine using the same

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