JPS6287955A - パタ−ン形成法 - Google Patents

パタ−ン形成法

Info

Publication number
JPS6287955A
JPS6287955A JP60229308A JP22930885A JPS6287955A JP S6287955 A JPS6287955 A JP S6287955A JP 60229308 A JP60229308 A JP 60229308A JP 22930885 A JP22930885 A JP 22930885A JP S6287955 A JPS6287955 A JP S6287955A
Authority
JP
Japan
Prior art keywords
sensitivity
chlorinated
rate
chlorination
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60229308A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0357469B2 (https=
Inventor
Yoshiki Suzuki
鈴木 淑希
Nobuyuki Yoshioka
信行 吉岡
Noriaki Ishio
石尾 則明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60229308A priority Critical patent/JPS6287955A/ja
Publication of JPS6287955A publication Critical patent/JPS6287955A/ja
Publication of JPH0357469B2 publication Critical patent/JPH0357469B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60229308A 1985-10-14 1985-10-14 パタ−ン形成法 Granted JPS6287955A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60229308A JPS6287955A (ja) 1985-10-14 1985-10-14 パタ−ン形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60229308A JPS6287955A (ja) 1985-10-14 1985-10-14 パタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS6287955A true JPS6287955A (ja) 1987-04-22
JPH0357469B2 JPH0357469B2 (https=) 1991-09-02

Family

ID=16890105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60229308A Granted JPS6287955A (ja) 1985-10-14 1985-10-14 パタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS6287955A (https=)

Also Published As

Publication number Publication date
JPH0357469B2 (https=) 1991-09-02

Similar Documents

Publication Publication Date Title
US3987215A (en) Resist mask formation process
US4286049A (en) Method of forming a negative resist pattern
JP3020320B2 (ja) リソグラフィ−用ペリクル
JPS5949536A (ja) 微細パタ−ン形成方法
JPH0344291B2 (https=)
JPS59104127A (ja) 微細パタ−ン形成方法
JPH01154050A (ja) パターン形成方法
JPS6287955A (ja) パタ−ン形成法
JP2867479B2 (ja) レジストパターンの形成方法
KR100512544B1 (ko) 현상 방법, 패턴 형성 방법과, 이들을 이용한 포토마스크또는 반도체 장치의 제조 방법
US4746596A (en) Method for microfabrication of pattern on substrate using X-ray sensitive resist
JPS60220340A (ja) 感光性樹脂組成物及びパタ−ン形成方法
JPH0310297B2 (https=)
JPH0310298B2 (https=)
JPS6287954A (ja) パタ−ン形成法
JPS58105142A (ja) 遠紫外線感応性レジスト材料及びその使用方法
JPH0143300B2 (https=)
JPS6155663B2 (https=)
Hori et al. H2 plasma development of X-ray imaged patterns on plasma-polymerized resists
JPS59121042A (ja) ネガ型レジスト組成物
JP2006073967A (ja) 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
JPS62127737A (ja) 現像液
JPS60220341A (ja) 感光性ホトレジスト組成物及びパタ−ン形成方法
JPS60114857A (ja) 乾式現像用感光性組成物
JPS6363564B2 (https=)

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

EXPY Cancellation because of completion of term