JPS6262559A - 入力保護回路 - Google Patents

入力保護回路

Info

Publication number
JPS6262559A
JPS6262559A JP60202347A JP20234785A JPS6262559A JP S6262559 A JPS6262559 A JP S6262559A JP 60202347 A JP60202347 A JP 60202347A JP 20234785 A JP20234785 A JP 20234785A JP S6262559 A JPS6262559 A JP S6262559A
Authority
JP
Japan
Prior art keywords
polysilicon resistor
layer
protection circuit
type
input protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60202347A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518467B2 (en:Method
Inventor
Toshio Wada
和田　俊男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP60202347A priority Critical patent/JPS6262559A/ja
Publication of JPS6262559A publication Critical patent/JPS6262559A/ja
Publication of JPH0518467B2 publication Critical patent/JPH0518467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP60202347A 1985-09-12 1985-09-12 入力保護回路 Granted JPS6262559A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60202347A JPS6262559A (ja) 1985-09-12 1985-09-12 入力保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60202347A JPS6262559A (ja) 1985-09-12 1985-09-12 入力保護回路

Publications (2)

Publication Number Publication Date
JPS6262559A true JPS6262559A (ja) 1987-03-19
JPH0518467B2 JPH0518467B2 (en:Method) 1993-03-12

Family

ID=16456027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60202347A Granted JPS6262559A (ja) 1985-09-12 1985-09-12 入力保護回路

Country Status (1)

Country Link
JP (1) JPS6262559A (en:Method)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
JP2015061205A (ja) * 2013-09-19 2015-03-30 三菱電機株式会社 増幅器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108267A (en) * 1980-01-31 1981-08-27 Nec Corp Insulated-gate field-effect semiconductor device
JPS5815277A (ja) * 1981-07-21 1983-01-28 Toshiba Corp 入力保護回路
JPS599955A (ja) * 1982-07-07 1984-01-19 Nec Corp 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56108267A (en) * 1980-01-31 1981-08-27 Nec Corp Insulated-gate field-effect semiconductor device
JPS5815277A (ja) * 1981-07-21 1983-01-28 Toshiba Corp 入力保護回路
JPS599955A (ja) * 1982-07-07 1984-01-19 Nec Corp 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980741A (en) * 1989-02-10 1990-12-25 General Electric Company MOS protection device
JP2015061205A (ja) * 2013-09-19 2015-03-30 三菱電機株式会社 増幅器

Also Published As

Publication number Publication date
JPH0518467B2 (en:Method) 1993-03-12

Similar Documents

Publication Publication Date Title
US4509067A (en) Semiconductor integrated circuit devices with protective means against overvoltages
JP2638462B2 (ja) 半導体装置
US3512058A (en) High voltage transient protection for an insulated gate field effect transistor
EP1187214A2 (en) Semiconductor device with a protection against ESD
US4963970A (en) Vertical MOSFET device having protector
GB1209271A (en) Improvements in semiconductor devices
US4261004A (en) Semiconductor device
US4739438A (en) Integrated circuit with an improved input protective device
JPH03180074A (ja) 半導体装置
US4990984A (en) Semiconductor device having protective element
JPS6262559A (ja) 入力保護回路
JP3412393B2 (ja) 半導体装置
EP0087155B1 (en) Means for preventing the breakdown of an insulation layer in semiconductor devices
JPH07105495B2 (ja) 絶縁ゲート型半導体装置
JP3217484B2 (ja) 高耐圧半導体装置
JPH07147384A (ja) 半導体装置
JPH0518468B2 (en:Method)
JP2776569B2 (ja) 半導体装置
JP4506424B2 (ja) 保護回路
JP3387622B2 (ja) 半導体装置の保護回路
JPH0346273A (ja) 入力保護装置
JPH0551183B2 (en:Method)
JPH0237112B2 (en:Method)
JPH02297966A (ja) 集積回路装置の電界効果トランジスタ保護構造
JP2996346B2 (ja) Ｍｏｓ集積回路