JPS6261257A - イオン注入装置 - Google Patents

イオン注入装置

Info

Publication number
JPS6261257A
JPS6261257A JP60199003A JP19900385A JPS6261257A JP S6261257 A JPS6261257 A JP S6261257A JP 60199003 A JP60199003 A JP 60199003A JP 19900385 A JP19900385 A JP 19900385A JP S6261257 A JPS6261257 A JP S6261257A
Authority
JP
Japan
Prior art keywords
ion
ion source
source
sources
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60199003A
Other languages
English (en)
Japanese (ja)
Other versions
JPH051588B2 (enrdf_load_stackoverflow
Inventor
Hideki Ishigaki
石垣　秀樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP60199003A priority Critical patent/JPS6261257A/ja
Publication of JPS6261257A publication Critical patent/JPS6261257A/ja
Publication of JPH051588B2 publication Critical patent/JPH051588B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
JP60199003A 1985-09-09 1985-09-09 イオン注入装置 Granted JPS6261257A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60199003A JPS6261257A (ja) 1985-09-09 1985-09-09 イオン注入装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60199003A JPS6261257A (ja) 1985-09-09 1985-09-09 イオン注入装置

Publications (2)

Publication Number Publication Date
JPS6261257A true JPS6261257A (ja) 1987-03-17
JPH051588B2 JPH051588B2 (enrdf_load_stackoverflow) 1993-01-08

Family

ID=16400482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60199003A Granted JPS6261257A (ja) 1985-09-09 1985-09-09 イオン注入装置

Country Status (1)

Country Link
JP (1) JPS6261257A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6253558U (enrdf_load_stackoverflow) * 1985-09-21 1987-04-02
WO2012068034A1 (en) * 2010-11-19 2012-05-24 Corning Incorporated Semiconductor structure made using improved multiple ion implantation process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787055A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Ion implantation device
JPS6044953A (ja) * 1983-08-20 1985-03-11 Fujitsu Ltd イオン注入装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787055A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Ion implantation device
JPS6044953A (ja) * 1983-08-20 1985-03-11 Fujitsu Ltd イオン注入装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6253558U (enrdf_load_stackoverflow) * 1985-09-21 1987-04-02
WO2012068034A1 (en) * 2010-11-19 2012-05-24 Corning Incorporated Semiconductor structure made using improved multiple ion implantation process
US8652952B2 (en) 2010-11-19 2014-02-18 Corning Incorporated Semiconductor structure made using improved multiple ion implantation process

Also Published As

Publication number Publication date
JPH051588B2 (enrdf_load_stackoverflow) 1993-01-08

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