JPS6259828A - Electrostatic capacity type pressure sensor - Google Patents

Electrostatic capacity type pressure sensor

Info

Publication number
JPS6259828A
JPS6259828A JP19960485A JP19960485A JPS6259828A JP S6259828 A JPS6259828 A JP S6259828A JP 19960485 A JP19960485 A JP 19960485A JP 19960485 A JP19960485 A JP 19960485A JP S6259828 A JPS6259828 A JP S6259828A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
silicon
diaphragm
joined
formed
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19960485A
Inventor
Kimihiro Nakamura
Mitsuru Tamai
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To improve the accuracy of the performance of a pressure sensor and to stabilize it by forming a corrosion-resisting thin film on a silicon substrate.
CONSTITUTION: The corrosion-resisting thin film 3b of Si3N4 or SiO2 is formed on silicon crystal 3c in an atmospheric furnace. Then, an etching mask is formed of, for example, SiO2, Si3N4, etc., on the reverse surface of the silicon substrate 3c and then an etching treatment is carried out. Then, the obtained silicon diaphragm 3 is joined with a silicon base 5 which is made of homogeneous silicon to thickness larger than that of the silicon diaphragm 3 by using an adhesive 4. Further, this silicon base 5 is joined with a substrate 7 by using glass with a low fusion point as an adhesive 8. Further, insulating glass 1 is joined with the upper part of the silicon diaphragm 3 by an electrostatic joining method. Consequently, a diaphragm with good size accuracy is formed and the performance of the sensor is made highly accurate and stabilized.
COPYRIGHT: (C)1987,JPO&Japio
JP19960485A 1985-09-11 1985-09-11 Electrostatic capacity type pressure sensor Pending JPS6259828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19960485A JPS6259828A (en) 1985-09-11 1985-09-11 Electrostatic capacity type pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19960485A JPS6259828A (en) 1985-09-11 1985-09-11 Electrostatic capacity type pressure sensor

Publications (1)

Publication Number Publication Date
JPS6259828A true true JPS6259828A (en) 1987-03-16

Family

ID=16410620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19960485A Pending JPS6259828A (en) 1985-09-11 1985-09-11 Electrostatic capacity type pressure sensor

Country Status (1)

Country Link
JP (1) JPS6259828A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02249936A (en) * 1989-03-23 1990-10-05 Toyoda Mach Works Ltd Capacity type pressure sensor
EP0478093A2 (en) * 1987-08-06 1992-04-01 United Technologies Corporation Method of producing capacitive pressure sensors
JP2832894B2 (en) * 1988-07-26 1998-12-09 日立建機株式会社 Pressure sensor and a manufacturing method thereof, as well as hydraulic equipment including a pressure sensor,
JP2009533866A (en) * 2006-04-13 2009-09-17 エルブイセンサーズ・インコーポレイテッドLv Sensors, Inc Capacitive micro-electro-mechanical sensor with a single crystal silicon electrode
US20100314701A1 (en) * 2007-10-30 2010-12-16 Yamatake Corporation Pressure sensor and manufacturing method thereof
JP2012083162A (en) * 2010-10-08 2012-04-26 Yokogawa Electric Corp Oscillation type pressure sensor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0478093A2 (en) * 1987-08-06 1992-04-01 United Technologies Corporation Method of producing capacitive pressure sensors
EP0478093A3 (en) * 1987-08-06 1992-04-15 Hamilton Standard Controls, Inc. Method of producing capacitive pressure sensors
JP2832894B2 (en) * 1988-07-26 1998-12-09 日立建機株式会社 Pressure sensor and a manufacturing method thereof, as well as hydraulic equipment including a pressure sensor,
JPH02249936A (en) * 1989-03-23 1990-10-05 Toyoda Mach Works Ltd Capacity type pressure sensor
JP2009533866A (en) * 2006-04-13 2009-09-17 エルブイセンサーズ・インコーポレイテッドLv Sensors, Inc Capacitive micro-electro-mechanical sensor with a single crystal silicon electrode
US20100314701A1 (en) * 2007-10-30 2010-12-16 Yamatake Corporation Pressure sensor and manufacturing method thereof
JP2012083162A (en) * 2010-10-08 2012-04-26 Yokogawa Electric Corp Oscillation type pressure sensor

Similar Documents

Publication Publication Date Title
US4672354A (en) Fabrication of dielectrically isolated fine line semiconductor transducers and apparatus
JPS6218075A (en) Photoelectric conversion device
JPS62207917A (en) Vibration and acceleration sensor
JPS63274047A (en) Electron emitting element
JPS58137317A (en) Thin-film piezoelectric compound oscillator
JPS58130529A (en) Semiconductor etching method
JPS6068711A (en) Piezoelectric thin film resonator
JPH04147642A (en) Vacuum/electrostatic chuck
JPS63196080A (en) Semiconductor force sensor and tactile sensor using same
JPS5696865A (en) Manufacture of semiconductor device
JPS63228710A (en) Semiconductor device
JPH02303048A (en) Semiconductor device and manufacture thereof
JPS57130431A (en) Manufacture of semiconductor device
JPH03179778A (en) Insulating board for forming thin film semiconductor
JPH01187983A (en) Manufacture of photodiode
JPH0355822A (en) Manufacture of substrate for forming semiconductor element
DE3445774A1 (en) Method for fabricating a capacitive semiconductor pressure pick-up
JPS53135263A (en) Production of semiconductor device
JPS57204165A (en) Manufacture of charge coupling element
JPS5842251A (en) Manufacture of semiconductor device
JPS59106133A (en) Integrated circuit device
JPS63276276A (en) Manufacture of semiconductor device
JPS61247051A (en) Manufacture of semiconductor device
JPS6181649A (en) Manufacture of semiconductor device
JPH049770A (en) Semiconductor strain-sensitive sensor and manufacture thereof