JPS6258550B2 - - Google Patents
Info
- Publication number
- JPS6258550B2 JPS6258550B2 JP56000162A JP16281A JPS6258550B2 JP S6258550 B2 JPS6258550 B2 JP S6258550B2 JP 56000162 A JP56000162 A JP 56000162A JP 16281 A JP16281 A JP 16281A JP S6258550 B2 JPS6258550 B2 JP S6258550B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor layer
- opaque
- layer
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000010409 thin film Substances 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56000162A JPS57114292A (en) | 1981-01-06 | 1981-01-06 | Thin film image pickup element |
| US06/336,991 US4471371A (en) | 1981-01-06 | 1982-01-04 | Thin film image pickup element |
| US06/582,642 US4517733A (en) | 1981-01-06 | 1984-02-22 | Process for fabricating thin film image pick-up element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56000162A JPS57114292A (en) | 1981-01-06 | 1981-01-06 | Thin film image pickup element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57114292A JPS57114292A (en) | 1982-07-16 |
| JPS6258550B2 true JPS6258550B2 (de) | 1987-12-07 |
Family
ID=11466338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56000162A Granted JPS57114292A (en) | 1981-01-06 | 1981-01-06 | Thin film image pickup element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57114292A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59126666A (ja) * | 1983-01-10 | 1984-07-21 | Seiko Epson Corp | 固体イメ−ジセンサ |
| JPH0612811B2 (ja) * | 1983-04-04 | 1994-02-16 | セイコーエプソン株式会社 | 光電変換装置の製造方法 |
| JPS59188168A (ja) * | 1983-04-08 | 1984-10-25 | Seiko Epson Corp | 光電変換装置 |
| JPS6182466A (ja) * | 1984-09-29 | 1986-04-26 | Toshiba Corp | 光センサ |
| JPH0620568U (ja) * | 1992-02-29 | 1994-03-18 | 株式会社ノーリツ | 排水トラップ用のエクステンション装置 |
| FR2954831B1 (fr) * | 2009-12-30 | 2013-02-08 | Commissariat Energie Atomique | Dispositif imageur pixelise integre a transduction par diamant et procede de realisation |
-
1981
- 1981-01-06 JP JP56000162A patent/JPS57114292A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57114292A (en) | 1982-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4517733A (en) | Process for fabricating thin film image pick-up element | |
| US4471371A (en) | Thin film image pickup element | |
| US5101255A (en) | Amorphous photoelectric conversion device with avalanche | |
| JPH0120592B2 (de) | ||
| JPH04154165A (ja) | 半導体装置 | |
| JPH0436470B2 (de) | ||
| JPS6258550B2 (de) | ||
| JPS62124769A (ja) | 密着型イメ−ジセンサ | |
| US5976906A (en) | Method for manufacturing a solid state image sensing device | |
| JPS6292364A (ja) | 半導体デバイスおよびその製造方法 | |
| JPS6258551B2 (de) | ||
| JPS6062155A (ja) | イメ−ジセンサ | |
| JP2525780B2 (ja) | 積層型固体撮像装置 | |
| JPH01291460A (ja) | 固体撮像装置 | |
| JP3451833B2 (ja) | 固体撮像装置及び固体撮像装置の製造方法 | |
| JPS6320384B2 (de) | ||
| JPS63164270A (ja) | 積層型固体撮像装置 | |
| JPH04259257A (ja) | 光電変換装置 | |
| JPS61251068A (ja) | 固体撮像素子 | |
| JPH01192166A (ja) | 受光素子 | |
| JPH05145110A (ja) | 光電変換装置及びその駆動方法 | |
| JPH0628308B2 (ja) | イメ−ジセンサ | |
| JPH0513803A (ja) | 光電変換装置 | |
| JPH0576770B2 (de) | ||
| JPH08191143A (ja) | 光電変換装置 |