JPS625662A - Soi type high withstand voltage ic - Google Patents

Soi type high withstand voltage ic

Info

Publication number
JPS625662A
JPS625662A JP14504685A JP14504685A JPS625662A JP S625662 A JPS625662 A JP S625662A JP 14504685 A JP14504685 A JP 14504685A JP 14504685 A JP14504685 A JP 14504685A JP S625662 A JPS625662 A JP S625662A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
region
type
formed
gt
lt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14504685A
Inventor
Mikiko Saito
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78639Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate

Abstract

PURPOSE:To increase the withstand voltage by forming an N<+> type high density region in a P-type semiconductor substrate directly under a drain diffused layer of a high withstand voltage transistor, forming an N<-> type low impurity density region in the offset gate region of the periphery of the region, and connecting the high density region with the drain region. CONSTITUTION:An N<+> type diffused region 12 is formed on a region corresponding to the portion formed with a drain region 3 of a P-type silicon substrate 1, and an N<-> type region of low impurity density is formed at the periphery. A silicon oxide film 2 is formed as an insulating film, the oxide film on an N<+> type region 12 is opened to form a polycrystalline silicon. Thereafter, boron is implanted to the semiconductor layer to form a P-type semiconductor layer, phosphorus is further diffused to form a drain 3 and a source 4. Then, a gate oxide film 5 is formed, a region 11 is formed by a phosphorus ion implanting method, a polycrystalline silicon is formed as a gate 6. Then, aluminum is deposited to form electrodes 9, 10. Thus, even if an insulating film is reduced in thickness, the concentration of an electric field does not occur to obtain a transistor having high drain withstand voltage.
JP14504685A 1985-07-01 1985-07-01 Soi type high withstand voltage ic Pending JPS625662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14504685A JPS625662A (en) 1985-07-01 1985-07-01 Soi type high withstand voltage ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14504685A JPS625662A (en) 1985-07-01 1985-07-01 Soi type high withstand voltage ic

Publications (1)

Publication Number Publication Date
JPS625662A true true JPS625662A (en) 1987-01-12

Family

ID=15376133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14504685A Pending JPS625662A (en) 1985-07-01 1985-07-01 Soi type high withstand voltage ic

Country Status (1)

Country Link
JP (1) JPS625662A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171671A (en) * 1986-09-24 1988-07-15 Exxon Research Engineering Co Manufacture of large area-two-dimensional arranged article of tightly packaged colloidal particle
US5138409A (en) * 1989-02-09 1992-08-11 Fujitsu Limited High voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance
JPH05232515A (en) * 1991-09-25 1993-09-10 Semiconductor Energy Lab Co Ltd Semiconductor integrated circuit and its production
EP0622850A1 (en) * 1993-04-30 1994-11-02 International Business Machines Corporation An electrostatic discharge protect diode for silicon-on-insulator technology
US5382818A (en) * 1993-12-08 1995-01-17 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode
US6004831A (en) * 1991-09-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a thin film semiconductor device
EP1231645A2 (en) * 2001-02-12 2002-08-14 Hanning Elektro-Werke GmbH &amp; Co. KG Thin film SOI semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171671A (en) * 1986-09-24 1988-07-15 Exxon Research Engineering Co Manufacture of large area-two-dimensional arranged article of tightly packaged colloidal particle
US5138409A (en) * 1989-02-09 1992-08-11 Fujitsu Limited High voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance
JPH05232515A (en) * 1991-09-25 1993-09-10 Semiconductor Energy Lab Co Ltd Semiconductor integrated circuit and its production
US6004831A (en) * 1991-09-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a thin film semiconductor device
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
EP0622850A1 (en) * 1993-04-30 1994-11-02 International Business Machines Corporation An electrostatic discharge protect diode for silicon-on-insulator technology
US5382818A (en) * 1993-12-08 1995-01-17 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode
EP1231645A2 (en) * 2001-02-12 2002-08-14 Hanning Elektro-Werke GmbH &amp; Co. KG Thin film SOI semiconductor device
EP1231645A3 (en) * 2001-02-12 2004-12-08 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thin film SOI semiconductor device

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