JPS6255563U - - Google Patents
Info
- Publication number
- JPS6255563U JPS6255563U JP14619285U JP14619285U JPS6255563U JP S6255563 U JPS6255563 U JP S6255563U JP 14619285 U JP14619285 U JP 14619285U JP 14619285 U JP14619285 U JP 14619285U JP S6255563 U JPS6255563 U JP S6255563U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- discharge
- grid
- workpiece
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Description
第１図はこの考案による周波数調整用エツチン
グ装置の実施例を示す図、第２図はシヤツタを備
えたこの考案の実施例を示す図、第３図はスパツ
タエツチングを施した弾性波素子の例を示す断面
図、第４図は従来のスパツタエツチングによる周
波数調整装置を示す図である。
１……素子形成基板、２……素子形成電極、１
１……ベルジヤー、１２……試料台、１３……被
加工試料、１４……接地電極、１５……放電用電
源、１６……ガス導入口、１７……排気口、２１
……放電電極、２２……格子状電極、２３……シ
ヤツタ板、２４……シヤツタ支持棒。
Fig. 1 shows an embodiment of the frequency adjustment etching device according to this invention, Fig. 2 shows an embodiment of this invention equipped with a shutter, and Fig. 3 shows an acoustic wave element subjected to sputter etching. FIG. 4 is a sectional view showing an example of a conventional frequency adjustment device using sputter etching. 1...Element formation substrate, 2...Element formation electrode, 1
DESCRIPTION OF SYMBOLS 1... Belgear, 12... Sample stand, 13... Sample to be processed, 14... Ground electrode, 15... Power source for discharge, 16... Gas inlet, 17... Exhaust port, 21
... discharge electrode, 22 ... grid electrode, 23 ... shutter plate, 24 ... shutter support rod.
Claims (1)
ツタエツチングを行い、その被加工試料の周波数
を調整するエツチング装置において、放電電極の
少なくとも一部は格子状電極とされ、この格子状
電極は放電領域と上記被加工試料との間に配置さ
れていることを特徴とする周波数調整用エツチン
グ装置。 In an etching device that performs sputter etching on a workpiece using gas plasma discharge and adjusts the frequency of the workpiece, at least a part of the discharge electrode is a grid-like electrode, and this grid-like electrode connects the discharge area and the above-mentioned An etching device for frequency adjustment, characterized in that it is placed between a sample to be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14619285U JPS6255563U (en) | 1985-09-24 | 1985-09-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14619285U JPS6255563U (en) | 1985-09-24 | 1985-09-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6255563U true JPS6255563U (en) | 1987-04-06 |
Family
ID=31058435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14619285U Pending JPS6255563U (en) | 1985-09-24 | 1985-09-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6255563U (en) |
-
1985
- 1985-09-24 JP JP14619285U patent/JPS6255563U/ja active Pending