JPS6250811B2 - - Google Patents

Info

Publication number
JPS6250811B2
JPS6250811B2 JP13648380A JP13648380A JPS6250811B2 JP S6250811 B2 JPS6250811 B2 JP S6250811B2 JP 13648380 A JP13648380 A JP 13648380A JP 13648380 A JP13648380 A JP 13648380A JP S6250811 B2 JPS6250811 B2 JP S6250811B2
Authority
JP
Japan
Prior art keywords
intensity
transparent
amplitude
projected
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13648380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5762052A (en
Inventor
Masato Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Kogaku KK filed Critical Nippon Kogaku KK
Priority to JP13648380A priority Critical patent/JPS5762052A/ja
Publication of JPS5762052A publication Critical patent/JPS5762052A/ja
Publication of JPS6250811B2 publication Critical patent/JPS6250811B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP13648380A 1980-09-30 1980-09-30 Original plate to be projected for use in transmission Granted JPS5762052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13648380A JPS5762052A (en) 1980-09-30 1980-09-30 Original plate to be projected for use in transmission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13648380A JPS5762052A (en) 1980-09-30 1980-09-30 Original plate to be projected for use in transmission

Publications (2)

Publication Number Publication Date
JPS5762052A JPS5762052A (en) 1982-04-14
JPS6250811B2 true JPS6250811B2 (enrdf_load_stackoverflow) 1987-10-27

Family

ID=15176191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13648380A Granted JPS5762052A (en) 1980-09-30 1980-09-30 Original plate to be projected for use in transmission

Country Status (1)

Country Link
JP (1) JPS5762052A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0838726A1 (en) 1996-10-24 1998-04-29 Toppan Printing Co., Ltd. Halftone phase shift mask, blank for the same, and methods of manufacturing these
US6885433B2 (en) 1990-11-15 2005-04-26 Nikon Corporation Projection exposure apparatus and method
US6897942B2 (en) 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US6967710B2 (en) 1990-11-15 2005-11-22 Nikon Corporation Projection exposure apparatus and method
JP2006179553A (ja) * 2004-12-21 2006-07-06 Toppan Printing Co Ltd 極端紫外線露光用マスクブランク及びマスク並びにパターン転写方法
DE112009000965T5 (de) 2008-05-09 2011-03-10 Hoya Corp. Reflektive Maske, reflektiver Maskenrohling und Verfahren zum Herstellen einer reflektiven Maske

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3374452D1 (en) * 1982-04-05 1987-12-17 Ibm Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
US5235400A (en) * 1988-10-12 1993-08-10 Hitachi, Ltd. Method of and apparatus for detecting defect on photomask
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JP2786693B2 (ja) * 1989-10-02 1998-08-13 株式会社日立製作所 マスクの製造方法
US5290647A (en) * 1989-12-01 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Photomask and method of manufacturing a photomask
US5298365A (en) * 1990-03-20 1994-03-29 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
JPH0566552A (ja) * 1990-12-28 1993-03-19 Nippon Steel Corp レチクル
US5414746A (en) * 1991-04-22 1995-05-09 Nippon Telegraph & Telephone X-ray exposure mask and fabrication method thereof
JPH0536586A (ja) * 1991-08-02 1993-02-12 Canon Inc 像投影方法及び該方法を用いた半導体デバイスの製造方法
JP2759582B2 (ja) * 1991-09-05 1998-05-28 三菱電機株式会社 フォトマスクおよびその製造方法
JPH0567558A (ja) * 1991-09-06 1993-03-19 Nikon Corp 露光方法
JP2655215B2 (ja) * 1991-11-18 1997-09-17 三菱電機株式会社 フォトマスクのパターン欠陥修正方法
JP3194155B2 (ja) * 1992-01-31 2001-07-30 キヤノン株式会社 半導体デバイスの製造方法及びそれを用いた投影露光装置
JP3210123B2 (ja) * 1992-03-27 2001-09-17 キヤノン株式会社 結像方法及び該方法を用いたデバイス製造方法
US5674647A (en) * 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
JP3064769B2 (ja) * 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
US5739898A (en) * 1993-02-03 1998-04-14 Nikon Corporation Exposure method and apparatus
KR0135729B1 (en) * 1993-02-12 1998-04-24 Mitsubishi Electric Corp Attenuating type phase shifting mask and method of manufacturing thereof
US5593801A (en) * 1993-02-12 1997-01-14 Mitsubishi Denki Kabushiki Kaisha Attenuating type phase shifting mask, method of manufacturing thereof and semiconductor device manufactured by using the mask
JP3354305B2 (ja) * 1993-09-24 2002-12-09 大日本印刷株式会社 位相シフトマスクおよび位相シフトマスクの欠陥修正方法
JP3453435B2 (ja) * 1993-10-08 2003-10-06 大日本印刷株式会社 位相シフトマスクおよびその製造方法
JP3209645B2 (ja) * 1993-10-12 2001-09-17 三菱電機株式会社 位相シフトマスクの検査方法およびその方法に用いる検査装置
JPH07192988A (ja) * 1993-12-27 1995-07-28 Nikon Corp 照明光学装置
JP3368653B2 (ja) * 1994-03-11 2003-01-20 株式会社ニコン 照明方法及び装置、並びに露光方法及び装置
JPH07281413A (ja) * 1994-04-05 1995-10-27 Mitsubishi Electric Corp 減衰型位相シフトマスクおよびその製造方法
KR960002536A (enrdf_load_stackoverflow) * 1994-06-29 1996-01-26
JP3315254B2 (ja) * 1994-07-11 2002-08-19 三菱電機株式会社 減衰型位相シフトマスクを用いた露光方法
JP3080024B2 (ja) * 1997-02-20 2000-08-21 日本電気株式会社 露光方法および球面収差量の測定方法
JP2988417B2 (ja) * 1997-02-28 1999-12-13 日本電気株式会社 フォトマスク
JP2000206671A (ja) 1999-01-13 2000-07-28 Mitsubishi Electric Corp フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法
JP2003124339A (ja) 2001-10-11 2003-04-25 Toshiba Corp 半導体装置およびその製造方法
JP4598575B2 (ja) 2005-03-17 2010-12-15 ルネサスエレクトロニクス株式会社 パターン形成方法、半導体装置の製造方法、位相シフトマスク及び位相シフトマスクの設計方法
JP2006269853A (ja) * 2005-03-25 2006-10-05 Sony Corp 露光装置および露光方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6885433B2 (en) 1990-11-15 2005-04-26 Nikon Corporation Projection exposure apparatus and method
US6897942B2 (en) 1990-11-15 2005-05-24 Nikon Corporation Projection exposure apparatus and method
US6967710B2 (en) 1990-11-15 2005-11-22 Nikon Corporation Projection exposure apparatus and method
EP0838726A1 (en) 1996-10-24 1998-04-29 Toppan Printing Co., Ltd. Halftone phase shift mask, blank for the same, and methods of manufacturing these
JP2006179553A (ja) * 2004-12-21 2006-07-06 Toppan Printing Co Ltd 極端紫外線露光用マスクブランク及びマスク並びにパターン転写方法
DE112009000965T5 (de) 2008-05-09 2011-03-10 Hoya Corp. Reflektive Maske, reflektiver Maskenrohling und Verfahren zum Herstellen einer reflektiven Maske
US8372564B2 (en) 2008-05-09 2013-02-12 Hoya Corporation Reflective mask, reflective mask blank and method of manufacturing reflective mask

Also Published As

Publication number Publication date
JPS5762052A (en) 1982-04-14

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