JPS6248062A - Memory cell - Google Patents

Memory cell

Info

Publication number
JPS6248062A
JPS6248062A JP60188818A JP18881885A JPS6248062A JP S6248062 A JPS6248062 A JP S6248062A JP 60188818 A JP60188818 A JP 60188818A JP 18881885 A JP18881885 A JP 18881885A JP S6248062 A JPS6248062 A JP S6248062A
Authority
JP
Japan
Prior art keywords
capacitor
formed
memory cell
wall
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60188818A
Inventor
Shintaro Kurihara
Hideharu Nakajima
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP60188818A priority Critical patent/JPS6248062A/en
Publication of JPS6248062A publication Critical patent/JPS6248062A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • H01L27/10805Dynamic random access memory structures with one-transistor one-capacitor memory cells
    • H01L27/10808Dynamic random access memory structures with one-transistor one-capacitor memory cells the storage electrode stacked over transistor

Abstract

PURPOSE:To increase the electrostatic capacity of a memory cell by adding a capacitor which extends perpendicularly to the peripheral edge of the capacitor extended on a flat surface. CONSTITUTION:An insulating film 11 for forming the height of a side wall 13 is formed on an electrode film 10, the films 10 and 11 are formed, a side wall 13 made of a polycrystalline silicon is formed on the peripheral edge, and one electrode of a capacitor 16 is formed of the film 10 and the wall 13. Thus, the electrostatic capacity can be increased without increasing the occupying area of the capacitor by the wall 13 extended perpendicularly.
JP60188818A 1985-08-28 1985-08-28 Memory cell Pending JPS6248062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60188818A JPS6248062A (en) 1985-08-28 1985-08-28 Memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60188818A JPS6248062A (en) 1985-08-28 1985-08-28 Memory cell

Publications (1)

Publication Number Publication Date
JPS6248062A true JPS6248062A (en) 1987-03-02

Family

ID=16230352

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60188818A Pending JPS6248062A (en) 1985-08-28 1985-08-28 Memory cell

Country Status (1)

Country Link
JP (1) JPS6248062A (en)

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63318152A (en) * 1987-06-19 1988-12-27 Fujitsu Ltd Dynamic random access memory
JPH01257365A (en) * 1988-04-07 1989-10-13 Fujitsu Ltd Semiconductor integrated circuit device
JPH0258374A (en) * 1988-08-24 1990-02-27 Hitachi Ltd Semiconductor integrated circuit device
US4974040A (en) * 1987-06-17 1990-11-27 Fujitsu Limited Dynamic random access memory device and method of producing same
US4977102A (en) * 1987-11-17 1990-12-11 Fujitsu Limited Method of producing layer structure of a memory cell for a dynamic random access memory device
EP0404553A1 (en) * 1989-06-20 1990-12-27 Sharp Kabushiki Kaisha Semiconductor memory device
JPH03135670A (en) * 1989-10-20 1991-06-10 Kubota Corp Data base system containing intelligent retrieving method
JPH03180065A (en) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp Semiconductor device
JPH03180062A (en) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH03214767A (en) * 1990-01-19 1991-09-19 Nec Corp Manufacture of semiconductor device
JPH03232271A (en) * 1989-11-30 1991-10-16 Hyundai Electron Ind Co Ltd Semiconductor device equipped with cylindrical laminated capacitor and its manufacture
JPH03263370A (en) * 1990-02-16 1991-11-22 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
US5071783A (en) * 1987-06-17 1991-12-10 Fujitsu Limited Method of producing a dynamic random access memory device
JPH03296263A (en) * 1990-04-16 1991-12-26 Nec Corp Semiconductor memory cell and its manufacture
JPH04320370A (en) * 1991-03-23 1992-11-11 Samsung Electron Co Ltd Manufacture of semiconductor device
US5314835A (en) * 1989-06-20 1994-05-24 Sharp Kabushiki Kaisha Semiconductor memory device
JPH06236971A (en) * 1993-02-12 1994-08-23 Nec Corp A semiconductor memory device
US5436187A (en) * 1994-02-22 1995-07-25 Nec Corporation Process for fabricating a semiconductor memory device including a capacitor having a cylindrical storage node electrode
JPH07326717A (en) * 1993-12-31 1995-12-12 Hyundai Electron Ind Co Ltd Semiconductor memory device and its manufacturing method
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
US6028334A (en) * 1995-12-18 2000-02-22 Nec Corporation Semiconductor device and method of manufacturing the same
US6057190A (en) * 1996-06-24 2000-05-02 Nec Corporation Method of manufacturing semiconductor device
US6097053A (en) * 1996-08-22 2000-08-01 Nec Corporation Semiconductor device having a multi-wall cylindrical capacitor
US6340619B1 (en) 1996-12-26 2002-01-22 Lg Semicon Co., Ltd. Capacitor and method of fabricating the same
US6403455B1 (en) 2000-08-31 2002-06-11 Samsung Austin Semiconductor, L.P. Methods of fabricating a memory device
US6407420B1 (en) 1996-12-20 2002-06-18 Hitachi, Ltd. Integrated circuit device having line width determined by side wall spacer provided in openings formed in insulating film for connection conductors
US6576510B2 (en) 1999-06-17 2003-06-10 Hitachi Ltd Method of producing a semiconductor memory device using a self-alignment process
US6689668B1 (en) 2000-08-31 2004-02-10 Samsung Austin Semiconductor, L.P. Methods to improve density and uniformity of hemispherical grain silicon layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112646A (en) * 1982-12-20 1984-06-29 Fujitsu Ltd Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112646A (en) * 1982-12-20 1984-06-29 Fujitsu Ltd Semiconductor memory device

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5071783A (en) * 1987-06-17 1991-12-10 Fujitsu Limited Method of producing a dynamic random access memory device
US5650647A (en) * 1987-06-17 1997-07-22 Fujitsu Limited Dynamic random access memory device and method of producing same
US4974040A (en) * 1987-06-17 1990-11-27 Fujitsu Limited Dynamic random access memory device and method of producing same
US5021357A (en) * 1987-06-17 1991-06-04 Fujitsu Limited Method of making a dram cell with stacked capacitor
JPS63318152A (en) * 1987-06-19 1988-12-27 Fujitsu Ltd Dynamic random access memory
US4977102A (en) * 1987-11-17 1990-12-11 Fujitsu Limited Method of producing layer structure of a memory cell for a dynamic random access memory device
JPH01257365A (en) * 1988-04-07 1989-10-13 Fujitsu Ltd Semiconductor integrated circuit device
JPH0258374A (en) * 1988-08-24 1990-02-27 Hitachi Ltd Semiconductor integrated circuit device
EP0404553A1 (en) * 1989-06-20 1990-12-27 Sharp Kabushiki Kaisha Semiconductor memory device
US5334869A (en) * 1989-06-20 1994-08-02 Sharp Kabushiki Kaisha Semiconductor memory device
US5314835A (en) * 1989-06-20 1994-05-24 Sharp Kabushiki Kaisha Semiconductor memory device
JPH03135670A (en) * 1989-10-20 1991-06-10 Kubota Corp Data base system containing intelligent retrieving method
JPH03232271A (en) * 1989-11-30 1991-10-16 Hyundai Electron Ind Co Ltd Semiconductor device equipped with cylindrical laminated capacitor and its manufacture
JPH03180062A (en) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH03180065A (en) * 1989-12-08 1991-08-06 Mitsubishi Electric Corp Semiconductor device
JPH03214767A (en) * 1990-01-19 1991-09-19 Nec Corp Manufacture of semiconductor device
JPH03263370A (en) * 1990-02-16 1991-11-22 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH03296263A (en) * 1990-04-16 1991-12-26 Nec Corp Semiconductor memory cell and its manufacture
JPH04320370A (en) * 1991-03-23 1992-11-11 Samsung Electron Co Ltd Manufacture of semiconductor device
JPH06236971A (en) * 1993-02-12 1994-08-23 Nec Corp A semiconductor memory device
JPH0831575B2 (en) * 1993-02-12 1996-03-27 日本電気株式会社 A semiconductor memory device
JPH07326717A (en) * 1993-12-31 1995-12-12 Hyundai Electron Ind Co Ltd Semiconductor memory device and its manufacturing method
US5436187A (en) * 1994-02-22 1995-07-25 Nec Corporation Process for fabricating a semiconductor memory device including a capacitor having a cylindrical storage node electrode
US6028334A (en) * 1995-12-18 2000-02-22 Nec Corporation Semiconductor device and method of manufacturing the same
US6057190A (en) * 1996-06-24 2000-05-02 Nec Corporation Method of manufacturing semiconductor device
US6097053A (en) * 1996-08-22 2000-08-01 Nec Corporation Semiconductor device having a multi-wall cylindrical capacitor
US6407420B1 (en) 1996-12-20 2002-06-18 Hitachi, Ltd. Integrated circuit device having line width determined by side wall spacer provided in openings formed in insulating film for connection conductors
US6340619B1 (en) 1996-12-26 2002-01-22 Lg Semicon Co., Ltd. Capacitor and method of fabricating the same
US6576510B2 (en) 1999-06-17 2003-06-10 Hitachi Ltd Method of producing a semiconductor memory device using a self-alignment process
US6661048B2 (en) 1999-06-17 2003-12-09 Hitachi, Ltd. Semiconductor memory device having self-aligned wiring conductor
US6403455B1 (en) 2000-08-31 2002-06-11 Samsung Austin Semiconductor, L.P. Methods of fabricating a memory device
US6689668B1 (en) 2000-08-31 2004-02-10 Samsung Austin Semiconductor, L.P. Methods to improve density and uniformity of hemispherical grain silicon layers

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