JPS6247161U - - Google Patents

Info

Publication number

JPS6247161U

JPS6247161U JP13895485U JP13895485U JPS6247161U JP S6247161 U JPS6247161 U JP S6247161U JP 13895485 U JP13895485 U JP 13895485U JP 13895485 U JP13895485 U JP 13895485U JP S6247161 U JPS6247161 U JP S6247161U

Authority

JP

Japan

Prior art keywords

gallium arsenide

substrate

semiconductor device

buffer layer

epitaxial growth

Prior art date

1985-09-10

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 239000004065 semiconductor Substances 0.000 claims description 5
• JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
• 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
• 239000000758 substrate Substances 0.000 claims description 4
• FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims 2
• 239000013078 crystal Substances 0.000 description 2
• 238000001000 micrograph Methods 0.000 description 2

Cited By (1)