JPS6245069A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6245069A
JPS6245069A JP18494985A JP18494985A JPS6245069A JP S6245069 A JPS6245069 A JP S6245069A JP 18494985 A JP18494985 A JP 18494985A JP 18494985 A JP18494985 A JP 18494985A JP S6245069 A JPS6245069 A JP S6245069A
Authority
JP
Japan
Prior art keywords
film
cvdsio
forming
silicon
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18494985A
Other languages
Japanese (ja)
Inventor
Masakazu Shiozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18494985A priority Critical patent/JPS6245069A/en
Publication of JPS6245069A publication Critical patent/JPS6245069A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To micrify the element by forming a third inter-layer insulating film covering the contact holes, and etching the third inter-layer insulating film so that it remains on the side walls of the conductor film.
CONSTITUTION: On a P-type silicon substrate 11 a field oxide film 12 is formed, a silicon oxide film 13 is formed in the element region surrounded by the field oxide film 12, a phosphorus-doped polycrystalline silicon film 14 and a silicon nitride film 15 are sequentially formed on the whole surface, and photoresist 16 is formed on the nitride film 15. The nitride film 15 and the polycrystalline silicon film 14 are selectively etched away, forming a nitride film pattern 17 and a gate electrode 18 respectively, and an impurity is introduced, forming N+ type source and drain regions 19, 20. After peeling the photoresist 16, a CVDSiO2 film 21 is formed, contact holes 22a, 22b are formed, a CVDSiO2 film 24 is formed on the whole surface, and the film 24 is etched so that it remains on the electrode 18 and the side walls of the CVDSiO2 film 21.
COPYRIGHT: (C)1987,JPO&Japio
JP18494985A 1985-08-22 1985-08-22 Manufacture of semiconductor device Pending JPS6245069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18494985A JPS6245069A (en) 1985-08-22 1985-08-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18494985A JPS6245069A (en) 1985-08-22 1985-08-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6245069A true JPS6245069A (en) 1987-02-27

Family

ID=16162171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18494985A Pending JPS6245069A (en) 1985-08-22 1985-08-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6245069A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236317A (en) * 1987-03-25 1988-10-03 Toshiba Corp Manufacture of semiconductor device
JPH02218135A (en) * 1989-02-17 1990-08-30 Texas Instr Japan Ltd Semiconductor device and manufacture thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63236317A (en) * 1987-03-25 1988-10-03 Toshiba Corp Manufacture of semiconductor device
JPH02218135A (en) * 1989-02-17 1990-08-30 Texas Instr Japan Ltd Semiconductor device and manufacture thereof

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