JPS6245069A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6245069A JPS6245069A JP18494985A JP18494985A JPS6245069A JP S6245069 A JPS6245069 A JP S6245069A JP 18494985 A JP18494985 A JP 18494985A JP 18494985 A JP18494985 A JP 18494985A JP S6245069 A JPS6245069 A JP S6245069A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cvdsio
- forming
- silicon
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 abstract 3
- 239000011229 interlayer Substances 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Abstract
PURPOSE: To micrify the element by forming a third inter-layer insulating film covering the contact holes, and etching the third inter-layer insulating film so that it remains on the side walls of the conductor film.
CONSTITUTION: On a P-type silicon substrate 11 a field oxide film 12 is formed, a silicon oxide film 13 is formed in the element region surrounded by the field oxide film 12, a phosphorus-doped polycrystalline silicon film 14 and a silicon nitride film 15 are sequentially formed on the whole surface, and photoresist 16 is formed on the nitride film 15. The nitride film 15 and the polycrystalline silicon film 14 are selectively etched away, forming a nitride film pattern 17 and a gate electrode 18 respectively, and an impurity is introduced, forming N+ type source and drain regions 19, 20. After peeling the photoresist 16, a CVDSiO2 film 21 is formed, contact holes 22a, 22b are formed, a CVDSiO2 film 24 is formed on the whole surface, and the film 24 is etched so that it remains on the electrode 18 and the side walls of the CVDSiO2 film 21.
COPYRIGHT: (C)1987,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18494985A JPS6245069A (en) | 1985-08-22 | 1985-08-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18494985A JPS6245069A (en) | 1985-08-22 | 1985-08-22 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6245069A true JPS6245069A (en) | 1987-02-27 |
Family
ID=16162171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18494985A Pending JPS6245069A (en) | 1985-08-22 | 1985-08-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6245069A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63236317A (en) * | 1987-03-25 | 1988-10-03 | Toshiba Corp | Manufacture of semiconductor device |
| JPH02218135A (en) * | 1989-02-17 | 1990-08-30 | Texas Instr Japan Ltd | Semiconductor device and manufacture thereof |
-
1985
- 1985-08-22 JP JP18494985A patent/JPS6245069A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63236317A (en) * | 1987-03-25 | 1988-10-03 | Toshiba Corp | Manufacture of semiconductor device |
| JPH02218135A (en) * | 1989-02-17 | 1990-08-30 | Texas Instr Japan Ltd | Semiconductor device and manufacture thereof |
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