JPS6243152A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To prevent yield of hillocks on a wiring layer, by forming an aluminum hydrated oxide layer on the surface of the wiring layer comprising aluminum or aluminum alloy and on its basis insulating film. CONSTITUTION:After the formation of a wiring layer 3 comprising aluminum or aluminum alloy, the entire surface undergoes sputter etching. The surface is treated in pure water, which is heated to specified temperature or more, or in steam. Thus, an aluminum hydrated oxide layer 8 is formed on the surface of the wiring layer and on its basis insulating film. The aluminum hydrated oxide layer, which is formed on the wiring layer of the aluminum or the aluminum alloy is very hard. Therefore, growth of abnormal projections yielded on the wiring layer is prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device and a method for manufacturing the same, and particularly to a semiconductor device having a metal plate made of aluminum or an aluminum alloy! and its manufacturing method.

[Prior Art] FIG. 6 is a diagram showing a cross-sectional structure of an example of a conventional semiconductor device. In the figure, on the silicon substrate 1, PSG
A (phosphorus glass) film 2 is formed.

An arrangement 1113 made of aluminum or aluminum alloy is formed on this PSGi 12.

On top of the wiring layer 3 is the final protection 1! I4 is formed.

This final protective film 4 is made of, for example, phosphorus glass, silicon nitride, silicon oxide, or the like.

FIG. 7 is a diagram showing a stacked structure of another example of a conventional semiconductor device. In the figure, on the silicon substrate 1 there is a P S
G ffQ 2 is formed. This PSGS2O2 contains a first lIi! made of aluminum or an aluminum alloy! Ii? , IPl 5 is formed. A 11.1 insulating film 6 is formed on this first wiring layer 5. A second lIi! wire wA7 made of aluminum or an aluminum alloy is formed on the interlayer insulation layer 6. On the second insulation layer 7, a 4 is formed.

Next, a conventional method of manufacturing a semiconductor device shown in the sixth period will be explained. Silicon substrate 1 with impurity diffusion layer formed
．． On the PSG film 2 thereon, a film of aluminum or an aluminum alloy film 3 is formed over the entire surface by sputtering or vacuum evaporation.

Next, photo 1! Using a plate-making technique, patterning with a resist (unnecessary 8I1 aluminum or aluminum alloy pattern is removed by etching) to form wiring in the desired shape!!53.

Thereafter, in order to make electrical contact between the wiring 13 and the silicon substrate 1, a heat treatment is applied at about 400 to 500° C. to form an R ridge 4 at the end.

(The point that the defense is trying to solve is that the conventional semiconductor device is configured as described above,
Twice (two times) during the formation of the wiring rgjJ3, the heat treatment after the formation, or the formation of the final protective film 4.
An abnormal aluminum protrusion called l-1i1100 appears on 113, and this is 1! “B ffi ffi
This causes pinholes in l1ff4, and there is a problem in that moisture resistance and deterioration of the semiconductor device are avoided. Also, the seventh
In the semiconductor device with the multilayer two-line structure shown in the figure, l-1i11ock, which is present on the first two lines, is often 1
There were 5 problems that resulted in a low f/f temperature and reduced yield. In Zara, the first one is earned (
1 (if the I9 difference is tight, the D difference part V: majl
J) Step coverage of concave 1, 5, and 6, that is, coverage is sufficient! Get well, second norai! Grudge 1] 7 no 1
There was a problem of not reducing step coverage to 1 or deteriorating step coverage.

This invention was made in order to solve the above-mentioned problems.Hiliock occurs on wiring layers made of aluminum or aluminum alloy. 1 cow Riyaq
Means for Solving Problems L:1 A semiconductor device according to the present invention provides a surface insulation layer for a wiring layer made of aluminum or an aluminum alloy, and an underlying insulation layer for the wiring layer. It is made by forming an aluminum hydrated IM (aluminum tube) on the beaten surface.

Further, in the semiconductor manufacturing method according to the present invention, after forming the wiring IW made of aluminum or aluminum alloy, the whole (3) is subjected to sputtering treatment and heated to a predetermined temperature or higher. By treating the 71i surface in 0-heated pure water or water vapor, an aluminum hydrated oxide layer is formed on the surface of the nε substrate and the underlying insulation 4i1.

(Function) Aluminium for Alcimini formed on a wiring layer of aluminum or aluminum alloy (Mizukawa x Chemical m)! +, t,
Since it is very hard, it acts to prevent the growth of abnormal protrusions that occur in the wiring 1. > A PSGI 2 is formed on the substrate 1. On this PSGI 2, wiring @ 3 made of aluminum or aluminum alloy is formed.
be formed. An aluminum hydrated oxide layer 8 is formed on the wiring 13. , PSGgl12. A respinning layer 4 is formed so as to cover the wafer A layer 3 and the aluminum hydrated oxide M8.

FIG. 2 is a diagram showing the manufacturing process of the entire example shown in FIG. 1. Hereinafter, with reference to this FIG. 2, the production method b shown in FIG. 1 will be explained.

FIG. 2 rl] Silicon pitched board with unloaded material expansion rl11 formed 1. On the PSG layer 2 thereon, a wiring layer 3 made of aluminum or an aluminum alloy is formed using photolithography. Since oxygen plasma is normally used as a method for removing the resist, a very thin but stable aluminum oxide film 9 is formed on the surface of the interconnection I1 layer 3 at this time.

FIG. 2 (H) Next, when the entire surface is sputter-etched using inert gas ions such as aluminum, the stable aluminum oxide film 9 on the surface of the distributed WA layer 3 is removed, leaving the surface in a relatively active state. becomes.

At the same time, the sputter-etched aluminum atoms are also redeposited on the underlying insulating film, that is, the PSG layer 2, and an aluminum layer 110 is formed.

FIG. 2 1m Next, by surface-treating the entire surface of the wiring layer 3 and the aluminum layer Mlo in pure water or steam heated to 40° C. or higher, not only the surface of the wiring layer 3 but also P S G [12 In other words, an aluminum hydrated oxide layer 8 is also formed on the underlying insulating film of the wiring 13. , prevents the growth of abnormal protrusions in the wiring layer 3 that is very cut. It also has some advantages.

2nd [IV: Thereafter, 400 to 500''C&IID heat treatment is applied to make a pneumatic contact between the wiring layer 3 and the silicon substrate 1, and finally &! is applied to form the holly protection film 4.

In the semiconductor device manufactured by the above method (see FIG. 1), the occurrence of hillocks on the wiring layer 3 can be prevented by the aluminum hydrated oxide layer 8. This results in good moisture resistance.

In addition, although the east conductor device with the ψ-layer double line structure was described in the example of the study, the present invention can also be applied to semiconductors with a multi-layer wiring structure. FIGS. 3 and 4 are diagrams showing examples in which the present invention is applied to semiconductor devices having irregularly arranged configurations.

In the figure, the structures of these two embodiments are the same as the conventional example shown in FIG. 7 except for the following points, and corresponding parts are given the same reference numerals and their explanation will be omitted. First, the feature of the embodiment shown in FIG. be. On the other hand, the feature of the embodiment shown in FIG.
The aluminum hydrated oxide layer 8 is also formed on the surface of the substrate and the interlayer insulating layer 16 which is the underlying insulating film.

As mentioned above, when this invention is applied to a semiconductor device with a multilayer wiring structure, fiI? fj! Not only can pinholes be prevented from forming in the FF film 4, but also
It is also possible to prevent interlayer insulation defects due to ock, and the yield can be significantly improved. Furthermore, the first sale! !
Since the slope at the stepped portion of No. 5 is smoothed and flattened, the living room insulation g! 6 can be improved, and disconnection of the second wiring layer 7 and deterioration of the step coverage can be prevented.

FIG. 5 is a diagram showing a product 1 structure of still another embodiment of the present invention. This embodiment is a one-tank device with a single-layer laminated structure similar to the conventional example shown in FIG. Kanbake, bitter 8 is the final protection: JII
It is used as I.

[Effect of explanation] As described above, according to the present invention, after forming a wiring layer made of aluminum or an aluminum alloy, the entire surface is subjected to sputter etching treatment, and the surface treatment is performed in pure water or steam heated to a predetermined temperature or higher. By doing so, the layout R1
Since an aluminum hydrated oxide layer was formed on the surface of the 1FJ and the underlying insulating film, Hil
It is possible to obtain a semiconductor device that does not cause locking and has good moisture resistance and interlayer insulation properties. Further, the step difference at the end of the wiring layer can be smoothed and flattened, and the step coverage of the layer formed thereon can be improved.

[Brief explanation of drawings]

Figure 1 is one example of this invention! FIG. 3 is a diagram showing the laminated structure of the semiconductor device J of FIG. FIG. 2 is a diagram showing a method of manufacturing the semiconductor device Σ shown in FIG. FIG. 3 is a diagram showing a stacked structure of a semiconductor device according to another embodiment of the invention. FIG. 4 is a diagram showing a laminated illumination structure of a semiconductor device 5 according to still another embodiment of the present invention. FIG. 5 is a diagram showing a stacked structure of a semiconductor device according to still another embodiment of the invention. 6th
The figure is a diagram showing a printing surface structure of an example of a conventional semiconductor device. Figure 7 is a conventional semiconductor device! It is a figure which shows the product II structure of other examples. In the figure, 1 is the silicon substrate, 2 is the PSG layer, 3 is the wiring layer, and 4 is the final insulation layer. ! Membrane, 5 is the first! i! line layer,
6 is an insulating film between 1 and 1, 7 is an aluminum hydrated oxide layer from the second 2nd gate 181, 9 is an aluminum oxide film, and 10 is a sputter etching process in which aluminum atoms are formed on the base layer I!
A thin layer of aluminum is shown deposited by redeposition on the lamina. In addition, in the figures, the same reference numerals indicate the same or corresponding parts. Agent Masuo Oiwa/-
--Silicon Group 4 (2-PSQ Akatsuki 3--11 Self-Destruction Guard 4--One Hanging, Fighting) Hanging 1tII Tosuke 3 Zushin 4 Figures Gauge 5 Figure Po/-11 Silicon Shop 4 Anti,> ---PSCT1%. 3--One distribution

Claims (4)

[Claims] (1) A semiconductor device having a wiring layer made of aluminum or an aluminum alloy, characterized in that an aluminum hydrated oxide layer is formed on a surface of the wiring layer and an underlying insulating film thereof. (2) The wiring layer is formed in a plurality of layers, and the aluminum hydrated oxide layer is formed on any one or more of the plurality of wiring layers and the underlying insulating film. The semiconductor device according to item 1. (3) A method for manufacturing a semiconductor device having a wiring layer made of aluminum or an aluminum alloy, wherein after forming the wiring layer, the entire surface is subjected to sputter etching treatment, and the surface is etched in pure water or steam heated to a predetermined temperature or higher. A method for manufacturing a semiconductor device, comprising the step of forming an aluminum hydrated oxide layer on the surface of the wiring layer and the underlying insulating film by processing. (4) The method for manufacturing a semiconductor device according to claim 3, wherein the predetermined temperature is approximately 40°C.