JPS6240430A - Liquid crystal light valve - Google Patents
Liquid crystal light valveInfo
- Publication number
- JPS6240430A JPS6240430A JP18135785A JP18135785A JPS6240430A JP S6240430 A JPS6240430 A JP S6240430A JP 18135785 A JP18135785 A JP 18135785A JP 18135785 A JP18135785 A JP 18135785A JP S6240430 A JPS6240430 A JP S6240430A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light
- minute
- film
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は液晶ライトバルブに関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a liquid crystal light valve.
本発明は液晶ライトバルブにおいて、投写のための光反
射層を金属2層構造としたことにより、従来より構造が
簡素化され、作製を容易にしだものである。The present invention provides a liquid crystal light valve in which the light reflecting layer for projection has a two-metal structure, thereby simplifying the structure and making it easier to manufacture.
第1図は従来の液晶ライトバルブを用いた投写型表示シ
ステムを示している。ガラス板1,2の間に透明電極3
,4、半導体層6、液晶層5が形成されている。透明電
極5,4間に適当な?気バイアスを与えて右側からレー
ザやCRTを用いて投写したい画像を光で書き込む。光
が照射された半導体層は低抵抗状態となり、電気バイア
スは液晶に印加され、液晶を励起する。一方光が照射さ
れていない半導体層の部分は高抵抗状態のままであり、
液晶にバイアスは印加されない。液晶5層5は、印加電
圧によりその透過光量が変調される。FIG. 1 shows a conventional projection display system using a liquid crystal light valve. Transparent electrode 3 between glass plates 1 and 2
, 4, a semiconductor layer 6, and a liquid crystal layer 5 are formed. Appropriate between transparent electrodes 5 and 4? Apply an air bias and write the image you want to project with light from the right side using a laser or CRT. The semiconductor layer irradiated with light enters a low resistance state, and an electric bias is applied to the liquid crystal to excite the liquid crystal. On the other hand, the parts of the semiconductor layer that are not irradiated with light remain in a high resistance state,
No bias is applied to the liquid crystal. The amount of transmitted light of the liquid crystal layer 5 is modulated by applied voltage.
この原理は一般的な液晶表示体の原理と同じである。従
って投射光を液晶層にあてると多層誘電体層で反射して
スクリーン10上に書込光による像を形成する。半導体
層6と液晶層5の界面に存在する反射層は、原理的に導
電性のある膜は用いることができない。しかし高度の反
射能を要求するため、誘電体膜を多層化して必要な反射
能を確保している。This principle is the same as that of a general liquid crystal display. Therefore, when the projection light is applied to the liquid crystal layer, it is reflected by the multilayer dielectric layer to form an image on the screen 10 by the writing light. As the reflective layer existing at the interface between the semiconductor layer 6 and the liquid crystal layer 5, a conductive film cannot be used in principle. However, since a high degree of reflection is required, the dielectric film is multilayered to ensure the necessary reflection.
〔発明が解決しようとする問題点及び目的〕この誘電体
膜は屈折率の互いに異なる絶縁物、例えばSin、、T
i□O8を何層も積層することにより、本来透明な膜を
反射膜として形成する。[Problems and objects to be solved by the invention] This dielectric film is made of insulators with different refractive indexes, such as Sin, T, etc.
By stacking many layers of i□O8, an originally transparent film is formed as a reflective film.
このため、この多層誘電体膜の形成方法がむずかしいこ
とと、更に投射光の入射角度が限定される。For this reason, the method for forming this multilayer dielectric film is difficult, and furthermore, the incident angle of the projected light is limited.
又投射光の一部はわずかどうしても半導体層側へもれ、
本来書込光しか当たらない半導体層に照射され、画質を
劣化させる−こととなった。Also, a small portion of the projected light inevitably leaks to the semiconductor layer side,
The semiconductor layer, which was originally only exposed to writing light, was irradiated with the light, degrading the image quality.
従って本発明の目的は、より作製のしやすく、かつ、入
射角度依存性がなく、又反射能の高い、反射膜を提供す
ることにある。Therefore, an object of the present invention is to provide a reflective film that is easier to produce, has no dependence on the angle of incidence, and has high reflective ability.
本発明は、反射膜として微少な形状に分割された金属膜
と、第1の金属層のすき間を透過してきた光を吸収する
光吸収層の2層構造とすることを特徴とする。The present invention is characterized by a two-layer structure including a metal film divided into minute shapes as a reflective film and a light absorption layer that absorbs light transmitted through the gap between the first metal layer.
本発明による反射膜は、光吸収膜と金属膜によって構成
される。従って、反射能はほぼ100%となり、半導体
層へ透過してしまう光はまずない。The reflective film according to the present invention is composed of a light absorption film and a metal film. Therefore, the reflectivity is approximately 100%, and almost no light is transmitted to the semiconductor layer.
同時にどの角度から投射しても所定の方向に反射するこ
とができる。At the same time, it can be reflected in a predetermined direction no matter what angle it is projected from.
第2図は本発明の実施例である。ガラス板20.21、
及びバイアス印加のための透明電極22.23、半導体
層25、液晶層24は、従来例と同一の配置である。反
射膜は微少に分割された金属膜26と、この微少電極の
すき間を通過した光を吸収する光吸収層27よりなる・
金属膜の材料はAA、AP、As等、どれでもよい。微
少電極はマスク蒸M法か、フォトリングラフィにより形
成する。この微少電極のサイズは、ライトバルブ上で、
画像の分能より小さければ問題はない。FIG. 2 shows an embodiment of the invention. glass plate 20.21,
The transparent electrodes 22 and 23 for bias application, the semiconductor layer 25, and the liquid crystal layer 24 are arranged in the same manner as in the conventional example. The reflective film is made up of a metal film 26 that is minutely divided and a light absorption layer 27 that absorbs the light that passes through the gaps between the minute electrodes.
The metal film may be made of any material such as AA, AP, and As. The microelectrodes are formed by mask vaporization method or photolithography. The size of this microelectrode on the light valve is
There is no problem as long as it is smaller than the resolution of the image.
例えば2 Cm X 3 (7Hの有効エリアを有する
ライトバルブ上に、1000X1000の画素を用いる
とすれば、1画素当りのサイズは20μ毒×30μmで
ある。従ってこの微少電極のサイズをこれ同等もしくは
以下とすればよい。また、微少電極の間隔はフォトリソ
グラフィによれば5μm以下、2〜5μmは容易にでき
る。金属膜の厚みは1μm〜0.5μmであれば、蒸着
法、スパッタ法により作製される。但し微少電極のサイ
ズを小さくする際には、特に10μm以下にする場合、
金属膜の厚みは0.2μm以下が望ましい。これはパタ
ーン形成のしやすさと、反射能を高めるためには、金属
表面ができるだけ平坦であるという要請による。For example, if 1000 x 1000 pixels are used on a light bulb with an effective area of 2 Cm x 3 (7H), the size of each pixel is 20 μm x 30 μm. In addition, the distance between the microelectrodes can easily be 5 μm or less by photolithography, and 2 to 5 μm.If the thickness of the metal film is 1 μm to 0.5 μm, it can be produced by vapor deposition or sputtering. However, when reducing the size of the microelectrode, especially to 10 μm or less,
The thickness of the metal film is preferably 0.2 μm or less. This is due to the requirement that the metal surface be as flat as possible in order to facilitate pattern formation and improve reflectivity.
−力先吸収層としては、簡単な例は、有機体層に黒色染
料を染色した方式がある。又、可視光、あるいは入射光
の波長帯域において、その光を吸収する非常に抵抗の高
い材料又は絶縁物であれば所定の目的を達成できる。例
えば炭素、炭化硅素の層である。- A simple example of the force absorbing layer is a method in which an organic layer is dyed with black dye. Further, a predetermined purpose can be achieved if the material or insulator has a very high resistance that absorbs visible light or incident light in the wavelength band. For example, a layer of carbon or silicon carbide.
第3図は本発明の拡大図である。ガラス基板30上に透
明M、極3丁、及びOd −S eやa −S i等の
半導体層をデポジットした後に、ゼラチン等の有機膜を
塗布して黒色染料液中に浸漬して染色する。その後A2
又はA2を0.2μm蒸着し・フォトリングラフィによ
り微少電極を構成する。その後対向ガラスをのせて周辺
をシールしてから液晶を注入して液晶ライトバルブを得
る。FIG. 3 is an enlarged view of the invention. After depositing transparent M, three poles, and semiconductor layers such as Od-S e and A-S i on the glass substrate 30, an organic film such as gelatin is applied and dyed by immersing it in a black dye solution. . Then A2
Alternatively, A2 is deposited to a thickness of 0.2 μm and a microelectrode is formed by photolithography. After that, a facing glass is placed and the surrounding area is sealed, and liquid crystal is injected to obtain a liquid crystal light valve.
以上述べたように、本発明によれば、入射角に依存せず
に、かつ半導体層へのもれる光による画質の低下のない
ライトバルブを実現できる。又何よりの効果は作製が非
常に簡単で楽になることで ゛ある。従来異った材料を
10層前後用いたが、たった2層でよくなる。この結果
プロジェクション表示器の高性能化が画れると共に、シ
ステムのコンパクト化、低コストが可能になる。As described above, according to the present invention, it is possible to realize a light valve that is independent of the incident angle and that does not deteriorate image quality due to light leaking into the semiconductor layer. Moreover, the most important effect is that production is extremely simple and easy. Conventionally, around 10 layers of different materials were used, but now only two layers are needed. As a result, the performance of the projection display device can be improved, and the system can be made more compact and cost-effective.
第1図は従来の液晶ライトバルブの構造図。
第2図は本発明の液晶ライトバルブの構造図。
第6図は本発明の液晶ライトバルブの部分図で、(cL
)は拡大断面図、(b)は拡大平面図。
1.2.20.21.30・・・ガラス板3.4,22
,23.31・・・透明電極6.25.32・・・半導
体層
5.24・・・液晶層
10・・・スクリーン
7・・多層誘電体膜
26.33・・・反射金属膜
27.34・・・光吸収層
以 上Figure 1 is a structural diagram of a conventional liquid crystal light valve. FIG. 2 is a structural diagram of the liquid crystal light valve of the present invention. FIG. 6 is a partial view of the liquid crystal light valve of the present invention, (cL
) is an enlarged sectional view, and (b) is an enlarged plan view. 1.2.20.21.30...Glass plate 3.4, 22
, 23.31...Transparent electrode 6.25.32...Semiconductor layer 5.24...Liquid crystal layer 10...Screen 7...Multilayer dielectric film 26.33...Reflective metal film 27. 34...Light absorption layer or above
Claims (1)
極、及び前記透明電極間に、半導体層と液晶層をはさむ
液晶ライトバルブにおいて、前記半導体層と液晶層の界
面に微少電極からなる金属膜及び光吸収層を有すること
を特徴とする液晶ライトバルブ。(1) In a liquid crystal light valve that includes two glass plates, transparent electrodes on each glass plate, and a semiconductor layer and a liquid crystal layer sandwiched between the transparent electrodes, a microelectrode is formed at the interface between the semiconductor layer and the liquid crystal layer. A liquid crystal light valve characterized by having a metal film and a light absorption layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18135785A JPS6240430A (en) | 1985-08-19 | 1985-08-19 | Liquid crystal light valve |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18135785A JPS6240430A (en) | 1985-08-19 | 1985-08-19 | Liquid crystal light valve |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6240430A true JPS6240430A (en) | 1987-02-21 |
Family
ID=16099302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18135785A Pending JPS6240430A (en) | 1985-08-19 | 1985-08-19 | Liquid crystal light valve |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6240430A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH049925A (en) * | 1990-04-27 | 1992-01-14 | Sharp Corp | Optical writing type liquid crystal display element |
JPH05216060A (en) * | 1992-02-04 | 1993-08-27 | Nippon Hoso Kyokai <Nhk> | Space optical modulating element and production thereof |
US5272554A (en) * | 1991-01-28 | 1993-12-21 | Samsung Electronics Co. Ltd. | Liquid crystal light valve having a SiO2 /TiO2 dielectric mirror and a Si/SiO2 light blocking layer |
US5311338A (en) * | 1991-04-30 | 1994-05-10 | Samsung Electronics Co., Ltd. | Liquid crystal light valve with anodized aluminum light blocking/reflecting layer |
US5384649A (en) * | 1991-12-26 | 1995-01-24 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal spatial light modulator with electrically isolated reflecting films connected to electrically isolated pixel portions of photo conductor |
JPH07294938A (en) * | 1994-04-28 | 1995-11-10 | Matsushita Electric Ind Co Ltd | Liquid crystal display element and its production |
EP1209512A1 (en) * | 2000-11-27 | 2002-05-29 | Asulab S.A. | Reflective liquid crystal display device having an improved contrast |
US6753937B2 (en) | 2000-11-27 | 2004-06-22 | Asulab S.A. | Reflective liquid crystal display device having a black absorbent layer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911149A (en) * | 1972-05-29 | 1974-01-31 | ||
JPS5193195A (en) * | 1975-01-06 | 1976-08-16 | ||
JPS5810720A (en) * | 1981-07-10 | 1983-01-21 | Canon Inc | Electrooptical device |
-
1985
- 1985-08-19 JP JP18135785A patent/JPS6240430A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911149A (en) * | 1972-05-29 | 1974-01-31 | ||
JPS5193195A (en) * | 1975-01-06 | 1976-08-16 | ||
JPS5810720A (en) * | 1981-07-10 | 1983-01-21 | Canon Inc | Electrooptical device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH049925A (en) * | 1990-04-27 | 1992-01-14 | Sharp Corp | Optical writing type liquid crystal display element |
US5272554A (en) * | 1991-01-28 | 1993-12-21 | Samsung Electronics Co. Ltd. | Liquid crystal light valve having a SiO2 /TiO2 dielectric mirror and a Si/SiO2 light blocking layer |
US5311338A (en) * | 1991-04-30 | 1994-05-10 | Samsung Electronics Co., Ltd. | Liquid crystal light valve with anodized aluminum light blocking/reflecting layer |
US5384649A (en) * | 1991-12-26 | 1995-01-24 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal spatial light modulator with electrically isolated reflecting films connected to electrically isolated pixel portions of photo conductor |
JPH05216060A (en) * | 1992-02-04 | 1993-08-27 | Nippon Hoso Kyokai <Nhk> | Space optical modulating element and production thereof |
JPH07294938A (en) * | 1994-04-28 | 1995-11-10 | Matsushita Electric Ind Co Ltd | Liquid crystal display element and its production |
JP2698756B2 (en) * | 1994-04-28 | 1998-01-19 | 松下電器産業株式会社 | Manufacturing method of liquid crystal display element |
EP1209512A1 (en) * | 2000-11-27 | 2002-05-29 | Asulab S.A. | Reflective liquid crystal display device having an improved contrast |
US6753937B2 (en) | 2000-11-27 | 2004-06-22 | Asulab S.A. | Reflective liquid crystal display device having a black absorbent layer |
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