JPS6239519B2 - - Google Patents

Info

Publication number
JPS6239519B2
JPS6239519B2 JP12791379A JP12791379A JPS6239519B2 JP S6239519 B2 JPS6239519 B2 JP S6239519B2 JP 12791379 A JP12791379 A JP 12791379A JP 12791379 A JP12791379 A JP 12791379A JP S6239519 B2 JPS6239519 B2 JP S6239519B2
Authority
JP
Grant status
Grant
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12791379A
Other versions
JPS5654693A (en )
Inventor
Toshimasa Kihara
Toshibumi Inoe
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/32Timing circuits
JP12791379A 1979-10-05 1979-10-05 Expired JPS6239519B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12791379A JPS6239519B2 (en) 1979-10-05 1979-10-05

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12791379A JPS6239519B2 (en) 1979-10-05 1979-10-05
DE19803037315 DE3037315C2 (en) 1979-10-05 1980-10-02
US06193411 US4404659A (en) 1979-10-05 1980-10-03 Programmable read only memory

Publications (2)

Publication Number Publication Date
JPS5654693A true JPS5654693A (en) 1981-05-14
JPS6239519B2 true JPS6239519B2 (en) 1987-08-24

Family

ID=14971736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12791379A Expired JPS6239519B2 (en) 1979-10-05 1979-10-05

Country Status (3)

Country Link
US (1) US4404659A (en)
JP (1) JPS6239519B2 (en)
DE (1) DE3037315C2 (en)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4520461A (en) * 1979-01-24 1985-05-28 Xicor, Inc. Integrated high voltage distribution and control systems
JPS56108259A (en) * 1980-02-01 1981-08-27 Hitachi Ltd Semiconductor memory device
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
JPS57202771U (en) * 1981-06-18 1982-12-23
US4653026A (en) * 1981-08-12 1987-03-24 Hitachi, Ltd. Nonvolatile memory device or a single crystal silicon film
DE3279855D1 (en) * 1981-12-29 1989-09-07 Fujitsu Ltd Nonvolatile semiconductor memory circuit
JPS6314437B2 (en) * 1982-09-17 1988-03-30 Nippon Electric Co
NL8400326A (en) * 1984-02-03 1985-09-02 Philips Nv An integrated circuit with field-effect transistors, and a programmable read-only memory.
US4594689A (en) * 1984-09-04 1986-06-10 Motorola, Inc. Circuit for equalizing bit lines in a ROM
US4674328A (en) * 1985-07-19 1987-06-23 Dresser Industries, Inc. Method and apparatus for determining subsurface conditions using a tubing packoff tool
US4723225A (en) * 1985-10-15 1988-02-02 Texas Instruments Incorporated Programming current controller
JPH0530000B2 (en) * 1986-03-31 1993-05-06 Tokyo Shibaura Electric Co
US4823320A (en) * 1986-05-08 1989-04-18 Texas Instruments Incorporated Electrically programmable fuse circuit for an integrated-circuit chip
JP2732601B2 (en) * 1987-11-18 1998-03-30 株式会社東芝 Non-volatile semiconductor memory device
US5050125A (en) * 1987-11-18 1991-09-17 Kabushiki Kaisha Toshiba Electrically erasable programmable read-only memory with NAND cellstructure
US5182725A (en) * 1987-11-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Nonvolatile semiconductor memory device with reduced variation in source potential of floating gate type memory transistor and operating method therefor
JPH01137496A (en) * 1987-11-20 1989-05-30 Mitsubishi Electric Corp Non-volatile semiconductor storage
JPH0814991B2 (en) * 1988-01-28 1996-02-14 株式会社東芝 Electrically erasable nonvolatile semiconductor memory device
JP2573335B2 (en) * 1988-11-09 1997-01-22 東芝マイクロエレクトロニクス株式会社 Non-volatile memory
KR910007434B1 (en) * 1988-12-15 1991-09-26 안시환 Eeprom and the programming method
US5097444A (en) * 1989-11-29 1992-03-17 Rohm Corporation Tunnel EEPROM with overerase protection
US5132933A (en) * 1990-12-21 1992-07-21 Schreck John F Bias circuitry for nonvolatile memory array
US5719806A (en) * 1991-02-18 1998-02-17 Yamane; Masatoshi Memory cell array
US5235550A (en) * 1991-05-16 1993-08-10 Micron Technology, Inc. Method for maintaining optimum biasing voltage and standby current levels in a DRAM array having repaired row-to-column shorts
DE69232470D1 (en) * 1991-11-20 2002-04-11 Fujitsu Ltd Flash erasable semiconductor memory device with improved reliability
US5532623A (en) * 1994-10-21 1996-07-02 Waferscale Integration, Inc. Sense amplifier with read current tracking and zero standby power consumption
JP2917924B2 (en) * 1996-07-30 1999-07-12 日本電気株式会社 Nonvolatile semiconductor memory device
JP4290288B2 (en) * 1999-08-31 2009-07-01 Okiセミコンダクタ株式会社 Nonvolatile semiconductor memory device
WO2001082136A8 (en) * 2000-04-20 2004-02-19 Gen Electric Method and system for graphically identifying replacement parts for generally complex equipment
KR100562508B1 (en) * 2003-12-01 2006-03-21 삼성전자주식회사 Non-volatile memory device for preventing high voltage of bitline from leakaging
US7499345B2 (en) * 2005-11-25 2009-03-03 Giovanni Campardo Non-volatile memory implemented with low-voltages transistors and related system and method
WO2007069322A1 (en) * 2005-12-15 2007-06-21 Spansion Llc Semiconductor device and its control method
DE602006016230D1 (en) * 2006-03-17 2010-09-30 St Microelectronics Srl With low-voltage transistors implemented level shifter for a semiconductor memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4857558A (en) * 1971-11-20 1973-08-13
JPS5158078A (en) * 1974-09-20 1976-05-21 Siemens Ag Ic memori
JPS5634190A (en) * 1979-08-29 1981-04-06 Toshiba Corp Non-volatile semiconductor memory

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA813537A (en) * 1967-10-17 1969-05-20 Joseph H. Scott, Jr. Semiconductor memory device
US3579204A (en) * 1969-03-24 1971-05-18 Sperry Rand Corp Variable conduction threshold transistor memory circuit insensitive to threshold deviations
US3836894A (en) * 1974-01-22 1974-09-17 Westinghouse Electric Corp Mnos/sos random access memory
DE2445078B2 (en) * 1974-09-20 1976-07-15 In integrated engineering produced electronic memory
DE2514582C2 (en) * 1975-04-03 1977-05-26 Siemens Ag Circuit for generating read pulses
FR2375692A1 (en) * 1976-12-27 1978-07-21 Texas Instruments Inc Electrically programmable semiconductor storage matrix - has devices applying high and low voltages to selected row and column lines of matrix
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4857558A (en) * 1971-11-20 1973-08-13
JPS5158078A (en) * 1974-09-20 1976-05-21 Siemens Ag Ic memori
JPS5634190A (en) * 1979-08-29 1981-04-06 Toshiba Corp Non-volatile semiconductor memory

Also Published As

Publication number Publication date Type
JPS5654693A (en) 1981-05-14 application
US4404659A (en) 1983-09-13 grant
DE3037315A1 (en) 1981-04-23 application
DE3037315C2 (en) 1992-06-17 grant

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