JPS6228582B2 - - Google Patents
Info
- Publication number
- JPS6228582B2 JPS6228582B2 JP9453686A JP9453686A JPS6228582B2 JP S6228582 B2 JPS6228582 B2 JP S6228582B2 JP 9453686 A JP9453686 A JP 9453686A JP 9453686 A JP9453686 A JP 9453686A JP S6228582 B2 JPS6228582 B2 JP S6228582B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal silicon
- island
- silicon island
- diffusion
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000002955 isolation Methods 0.000 description 19
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000000926 separation method Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9453686A JPS61234053A (ja) | 1986-04-25 | 1986-04-25 | 集積半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9453686A JPS61234053A (ja) | 1986-04-25 | 1986-04-25 | 集積半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13002679A Division JPS5655061A (en) | 1979-10-11 | 1979-10-11 | Integrated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61234053A JPS61234053A (ja) | 1986-10-18 |
| JPS6228582B2 true JPS6228582B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Family
ID=14113046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9453686A Granted JPS61234053A (ja) | 1986-04-25 | 1986-04-25 | 集積半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61234053A (enrdf_load_stackoverflow) |
-
1986
- 1986-04-25 JP JP9453686A patent/JPS61234053A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61234053A (ja) | 1986-10-18 |
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