JPS62281351A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS62281351A
JPS62281351A JP12502986A JP12502986A JPS62281351A JP S62281351 A JPS62281351 A JP S62281351A JP 12502986 A JP12502986 A JP 12502986A JP 12502986 A JP12502986 A JP 12502986A JP S62281351 A JPS62281351 A JP S62281351A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
formed
method
surface
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12502986A
Inventor
Kazuma Minami
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To lower contact resistance and to stabilize the characteristics of a transistor, so that the tungsten silicide film at a contact hole part is not oxidized, by implanting arsenic in the entire surface after the contact hole is formed.
CONSTITUTION: An insulating film 12 comprising a silicon dioxide film 12 is formed on the main surface of a P-type single crystal silicon substrate 11 by a thermal oxidation method. A thin polycrystalline silicon film 13 is formed thereon by a CVD method. Phosphorus is introduced in the film 13. A high melting point silicide film 14 is formed thereon by a CVD method or a sputtering method. After a required pattern is formed, patterning is performed by using photoresist in a specified shape. Then, arsenic having a high dozing amount is implanted in the entire surface.
COPYRIGHT: (C)1987,JPO&Japio
JP12502986A 1986-05-29 1986-05-29 Manufacture of semiconductor device Pending JPS62281351A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12502986A JPS62281351A (en) 1986-05-29 1986-05-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12502986A JPS62281351A (en) 1986-05-29 1986-05-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS62281351A true true JPS62281351A (en) 1987-12-07

Family

ID=14900085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12502986A Pending JPS62281351A (en) 1986-05-29 1986-05-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS62281351A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306882A (en) * 1995-05-11 1996-11-22 Nec Corp Semiconductor device and fabrication method thereof
JPH09139360A (en) * 1995-11-03 1997-05-27 Hyundai Electron Ind Co Ltd Method of forming metallic wiring of semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08306882A (en) * 1995-05-11 1996-11-22 Nec Corp Semiconductor device and fabrication method thereof
JPH09139360A (en) * 1995-11-03 1997-05-27 Hyundai Electron Ind Co Ltd Method of forming metallic wiring of semiconductor element

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