JPS62276883A - Manufacture of enamel substrate for solar cell - Google Patents
Manufacture of enamel substrate for solar cellInfo
- Publication number
- JPS62276883A JPS62276883A JP61119136A JP11913686A JPS62276883A JP S62276883 A JPS62276883 A JP S62276883A JP 61119136 A JP61119136 A JP 61119136A JP 11913686 A JP11913686 A JP 11913686A JP S62276883 A JPS62276883 A JP S62276883A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- substrate
- frit
- glass layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 210000003298 dental enamel Anatomy 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 24
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 10
- 239000010935 stainless steel Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 13
- 239000008119 colloidal silica Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000004615 ingredient Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000004927 clay Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000004534 enameling Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000357293 Leptobrama muelleri Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000016674 enamel mineralization Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910000734 martensite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000000375 suspending agent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
３発明の詳細な説明
〔産業上の利用分野〕
本発明は、ステンレス鋼条板の表面にガラス層を形成す
る太陽電池用ほうろう基板の製造方法に関し、特に、ア
七ｐファヌシリコン（以下、ａ−３ｉという）太陽電池
に適したほうろう基板の製造方法に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method for manufacturing an enamel substrate for solar cells in which a glass layer is formed on the surface of a stainless steel strip, and in particular, The present invention relates to a method for manufacturing an enamel substrate suitable for p-fanu silicon (hereinafter referred to as a-3i) solar cells.
ａ−８ｉ太陽電池は基板上に厚さ１μｍ程度のａ−８ｉ
を被覆して太陽電池を構成するものであシ、その基板は
電池の性能とコストの両面に大きな影響を与えるため、
基板材の選択は重要な問題である。A-8i solar cells have a thickness of about 1 μm on the substrate.
The substrate is used to form a solar cell, and the substrate has a major impact on both battery performance and cost.
The selection of substrate material is an important issue.
従来、可焼性絶縁基板としては、金属板上にポリイミド
樹脂を塗布したものが用いられていたが、処理コストが
高く生産性が低いうえ、絶縁性が満足できず、他方、均
質な基板を得るためには、鋼条板の表面粗さく Ｒｍａ
工）をｃＬ５μ雇以下にしなければならなかった。また
金属板上にガラス層を形成したほうろう基板の作成も試
みられているが、基板表面が平滑でかつ、可焼性を満す
基板は得ることができなかった。Conventionally, a metal plate coated with polyimide resin has been used as a combustible insulating substrate, but processing costs are high, productivity is low, and insulation properties are not satisfactory. In order to obtain the surface roughness of the steel strip Rma
The company had to reduce the cost of labor (engineering) to less than cL5μ. Also, attempts have been made to create an enameled substrate with a glass layer formed on a metal plate, but it has not been possible to obtain a substrate with a smooth surface and flammable properties.
ほうろう基板の作成は、金属板上にガラス成分（フリッ
ト）とバインダー（ミル添加物）とからなるガラスペー
スト（スリップ）を塗布し、これを加熱溶融した後硬化
させる。ところがガラスペーストを加熱溶融させるとき
に、ガラス層に無数の気泡が発生し、硬化後のガラス層
表面チクレータ−状やビンホーμ状の表面欠陥となるの
で、その上にａ−８ｉ太暢電池を形成するときにセル特
性の劣化原因となっていた。また、このほうろう基板を
撓ませるとガラス層に加わる応力のためにガラス層にク
ラック、剥離等の破壊が生じ、可焼性基板として満足で
きるものではなかった。To create an enamel substrate, a glass paste (slip) consisting of a glass component (frit) and a binder (mill additive) is applied onto a metal plate, heated and melted, and then hardened. However, when heating and melting the glass paste, countless air bubbles are generated in the glass layer, resulting in ticulator-like and Binho μ-like surface defects on the surface of the glass layer after hardening. This caused deterioration of cell characteristics during formation. Furthermore, when this enamel substrate is bent, the stress applied to the glass layer causes damage such as cracks and peeling of the glass layer, making it unsatisfactory as a combustible substrate.
本発明は、従来の太陽電池用ほうろう基板の製造方法の
欠点を解消し、基板表面が平滑でかつ、可撓性を満す、
安価な太陽電池用ほうろう基板の製造方法を提供しよう
とするものである。The present invention eliminates the drawbacks of the conventional method for manufacturing enamel substrates for solar cells, and provides smooth and flexible substrate surfaces.
The present invention aims to provide a method for manufacturing an inexpensive enamel substrate for solar cells.
本発明は、ステンレス鋼条板の少なくとも片面にフリッ
トを施し、ガラス層を形成する太陽電池用基板の製造方
法において、ＳｉＯ２４０〜６５ ｗｔ％、Ｎａｎｏ
１０〜３０ ｗｔ％ １．Ｂ２Ｏ３６−２０ｗｔ％、
ＰｂＯ１０〜５５ｗｔ％を含有するフリットを施すこと
を特徴とする太陽電池用ほうろう基板の製造方法である
。The present invention provides a method for manufacturing a solar cell substrate in which a frit is applied to at least one side of a stainless steel strip to form a glass layer.
10-30 wt% 1. B2O36-20wt%,
This is a method for manufacturing an enamel substrate for a solar cell, characterized by applying a frit containing 10 to 55 wt% of PbO.
フリットの成分についてみると、ＳｉＯ２は４０ｙｔ％
未満であると太陽電池として使用される際の耐候性特に
紫外線によりガラス層の劣化が生じ可焼性が低下する。Looking at the ingredients of the frit, SiO2 is 40yt%.
If it is less than 100%, the weather resistance when used as a solar cell, especially the glass layer deteriorates due to ultraviolet rays, resulting in a decrease in sinterability.
６５チを越えるとしだいに弾性が低下し、満足すべき可
撓性が得られない。If it exceeds 65 inches, the elasticity gradually decreases and satisfactory flexibility cannot be obtained.
Ｎａ２Ｏは熱膨張係数を上げる効果が大きく、ステンレ
ス鋼条板と充分にｒ８！着し可焼性の良好なガラス層を
得るためには１０ ｗｔ％以上添加することが必要であ
る。しかし３０ ｗｔ％を超えるとフリットの膨張係数
を大きくしすぎてフリット特性を損うおそれがある。Na2O has a large effect of increasing the coefficient of thermal expansion, and is sufficiently r8! In order to obtain a glass layer with good adhesion and sinterability, it is necessary to add 10 wt% or more. However, if it exceeds 30 wt%, the expansion coefficient of the frit becomes too large, which may impair the frit properties.
Ｂ２Ｏ３は熱膨張係数を上げる効果があり、ステンレス
鋼条板の基板に適合させるために６〜２０ｗｔ％が必要
とされる。またさらにこのＢ２０．は焼付面の物性特に
弾性可焼性を向上させる。B2O3 has the effect of increasing the coefficient of thermal expansion, and 6-20 wt% is required to make it compatible with stainless steel strip substrates. Furthermore, this B20. improves the physical properties of the baked surface, especially the elastic sinterability.
ＰｂＯはガラス層の弾性を向上させる効果があυ１０
ｗｔ％以上添加すると、基板の可焼性を向上させるが、
５５ ｗｔ９６を超えるとフリットの耐久性の低下が認
められた。なお、フリットの成分として、Ｋ２Ｏ２〜５
ｗｔ％、ＴｉＯ２５〜８ｗｔチ、ＣａＯ０，５〜五Ｏ
ｗｔチを必要に応じて添加することかできる。PbO has the effect of improving the elasticity of the glass layer υ10
Adding more than wt% improves the scorchability of the substrate, but
When the weight exceeds 55wt96, a decrease in the durability of the frit was observed. In addition, as a component of the frit, K2O2~5
wt%, TiO25-8wt, CaO0,5-5O
Wt water can be added as necessary.
Ｋ２Ｏに関してはλ０〜５． Ｏｉｔ％の範囲が良好で
５．０％を超えるとＮａｎｏの増加と同様な結果となる
。Ｔ ｉ ｏ２ はガラス溶解時に粘度を低下させ、こ
れを含有したものはガラスの透明度を増加させる。これ
に適した範囲としては５〜８ｗｔチが適当である。Ｃａ
Ｏの効果は焼成（焼結）の際熱衝撃による割れを抑制す
る効果があり、これに適した範囲としては０．５〜３ｗ
ｔ％が適当である。Regarding K2O, λ0~5. The range of Oit% is good, and if it exceeds 5.0%, the result will be similar to the increase in Nano. Tio2 lowers the viscosity during glass melting, and those containing it increase the transparency of the glass. A suitable range for this is 5 to 8 wt. Ca
The effect of O is to suppress cracking due to thermal shock during firing (sintering), and the suitable range for this is 0.5 to 3 w.
t% is appropriate.
なお、必要に応じてフリット成分として鳩０３、ＮａＦ
、 ＡｌＦ２、ＺｎＯ１ＣａＦ２を１〜２０ｗｔ％含
有させることができる。またフリットは通常粘土等ミル
添加物を加えてスリップとして基板に施される。粘土を
添加する目的は、（１）フリットを浮遊させるだめの懸
濁剤（２）うわぐすシの乾燥膜の強化（３）ガラス層内
の泡構造の微、細化（４）機械的性質の改善等にあり、
一般に不純物の少ない蛙目粘土（ＳｉＯ２４８〜５２チ
、Ａ１□Ｑ３３０〜３５チ、Ｆｅ２Ｏ３１〜１．５ ％
、その他Ｃａ、０１Ｍｇ○等を含有）が用いられる。ほ
うろう処理の焼成温度を低くしだ場合には、粘土中に含
有する好ましからざる有機物が飛ばずに残存するおそれ
があるが、上記蛙目粘土はこの有機物の含有量が少ない
ので、粘土を用いる場合にはとの蛙目粘土を使用するの
が適当である。In addition, if necessary, Hato 03, NaF may be added as frit components.
, AlF2, ZnO1CaF2 can be contained in an amount of 1 to 20 wt%. The frit is also typically applied to the substrate as a slip with the addition of mill additives such as clay. The purpose of adding clay is (1) as a suspending agent to suspend the frit, (2) to strengthen the dry film of the glaze, (3) to make the bubble structure finer and finer in the glass layer, and (4) to improve mechanical properties. There are improvements in
Frog-eye clay with generally few impurities (SiO248-52%, A1□Q330-35%, Fe2O31-1.5%
, and others containing Ca, 01Mg○, etc.) are used. If the firing temperature for enameling treatment is kept low, there is a risk that undesirable organic matter contained in the clay will remain without being blown away, but since the above-mentioned frog's eye clay has a low content of this organic matter, when using clay It is appropriate to use toadeye clay.
ところが数百μｍの厚みの通常のほうろうではミ／Ｌ／
添加物として好適であった粘土も、可焼性を付与するた
めに薄くしたａ−８ｉ太陽電池用基板のガラス層として
は焼成時の発泡現象により、平滑性を損う原因となる。However, in the case of ordinary enamel with a thickness of several hundred μm, M/L/
Clay, which was suitable as an additive, also causes a loss of smoothness in the glass layer of the A-8I solar cell substrate, which is made thinner to impart sinterability, due to the foaming phenomenon during firing.
そこで、好ましくは粘土を含まないコロイダルシリカ（
コロイダルシリカはＳ１０．を主成分〔９０〜９６チ〕
とし、Ａ １２０５等を含有する）をフリット１００重
量部に対して１〜５重量部添加してスリップを構成する
ことがよい。なお、ミＩＶ添加物として通常使用される
炭酸カリウム、硼酸等を含有してもよい。Therefore, preferably clay-free colloidal silica (
Colloidal silica is S10. The main component [90-96chi]
It is preferable to form a slip by adding 1 to 5 parts by weight of 1 to 5 parts by weight of 1 to 5 parts by weight of 100 parts by weight of frit. Note that potassium carbonate, boric acid, etc., which are commonly used as Mi-IV additives, may be contained.
スリップはスプレー等で所望の厚みにステンレス鋼条板
上に塗布した後通常の方法で乾燥焼成してａ−３ｉ太陽
電池用基板を作成することができる。The slip can be applied to a stainless steel strip to a desired thickness by spraying or the like, and then dried and fired in a conventional manner to produce a substrate for an A-3I solar cell.
なお、ほうろう処理は２回以上繰返してガラス層を形成
してもさしつかえない。Note that the enameling treatment may be repeated two or more times to form the glass layer.
基板上のガラス層の厚みは１７〜５０μｍとすることが
好ましい。１７μｍよシ薄くなると曲げ性が急激に低下
する。また、５０μｍを越えると弾性が低下し可焼性が
失なわれる。The thickness of the glass layer on the substrate is preferably 17 to 50 μm. When the thickness becomes 17 μm, the bendability decreases rapidly. Moreover, if it exceeds 50 μm, elasticity decreases and sinterability is lost.
ステンレス鋼条板はフェライト系、オーステナイト系、
マルテンサイト糸のいずれでも使用することができ、そ
の厚さも０．１鶴程度であれば、ほうろう形成時の焼成
工程においても所定の特性を維持することができる。基
板の可焼性を維持するためにはＱ、３ｍｍ以下の厚みに
する必要はある。Stainless steel strips are ferritic, austenitic,
Any martensitic thread can be used, and as long as its thickness is about 0.1 mm, predetermined characteristics can be maintained even during the firing process during enamel formation. In order to maintain the flammability of the substrate, it is necessary to make the thickness Q, 3 mm or less.
（実施例）
０．１ｍの厚みに冷間加工されたステンレス鋼（ＳＵＳ
３ｏ４）をショツトブラスト、アルカリ脱脂および湯洗
によりほうろう処理に適した表面に調整した。これにス
プレィ法によりスリップを塗布し乾燥させた後大気中８
２０℃で３分間焼成し太陽電池用基板とした。(Example) Stainless steel (SUS) cold-worked to a thickness of 0.1 m
3o4) was adjusted to have a surface suitable for enameling by shot blasting, alkaline degreasing and hot water washing. Apply a slip to this using the spray method, let it dry, and then spray it in the air.
It was baked at 20° C. for 3 minutes to obtain a solar cell substrate.
第１表に示すフリヅト組成、第２表に示すミル配合の各
種組み合せで作成した基板材について特性を調査した結
果を第３表に示す。Table 3 shows the results of investigating the characteristics of substrate materials made with various combinations of frizz compositions shown in Table 1 and mill formulations shown in Table 2.
曲げ性（密着性、可撓性）の試験は、基板の一端をはさ
んで固定し、固定部から３０調離れた基板上の位置を５
調づつ曲げガラス層を光学印微鏡で観察し、クラック又
は剥離の発生した距離で表わし、大きい程可焼性が良い
と評価される。The bendability (adhesion, flexibility) test was performed by fixing one end of the board between the two sides, and placing the board at a position 30 degrees away from the fixed part.
The bent glass layer is observed with an optical microscope and is expressed as the distance at which cracks or peeling occur, and the greater the distance, the better the sinterability is evaluated.
上記ほうろう基板の表面にステンレス製の背面電憧層を
蒸着した後Ｐ型、１型、ｎ型の各ａ−８ｉ層を形成し、
その上に透明電極層を形成して太陽゛電池を得た。After depositing a stainless steel back electroconductive layer on the surface of the enamel substrate, forming P-type, 1-type, and N-type a-8i layers,
A transparent electrode layer was formed thereon to obtain a solar cell.
このようにして得だ太陽電池にＡＭ−１１００＠Ｗ／（
ｙ”の光を照射して変換効率を測定した。AM-1100@W/(
The conversion efficiency was measured by irradiating light of y''.
（発明の効果）
本発明は上記構成を採用することにより、ａ−８ｉ太陽
電池用基板として必要な表面平滑性及び曲げ性を有し、
その結果として太陽電池変換効率を飛Ｒり的に向上させ
ることができた。(Effects of the Invention) By adopting the above configuration, the present invention has surface smoothness and bendability necessary for an A-8I solar cell substrate,
As a result, the solar cell conversion efficiency could be dramatically improved.
第２表 ミ ル 配 合 第３表 太陽電池基板特性 昭和６１年 ６ 月＞ぢ日Table 2 Mill distribution Table 3: Solar cell substrate characteristics June 1986 > day
Claims (4)
施し、ガラス層を形成する太陽電池用ほうろう基板の製
造方法において、ＳｉＯ＿２４０〜６５ｗｔ％、Ｎａ＿
２Ｏ１０〜３０ｗｔ％、Ｂ＿２Ｏ＿３６〜２０ｗｔ％及
びＰｂＯ１０〜３５ｗｔ％を含有するフリットを施すこ
とを特徴とする太陽電池用ほうろう基板の製造方法。(1) In a method for manufacturing an enameled substrate for solar cells in which a glass layer is formed by fritting at least one side of a stainless steel strip, SiO_240 to 65 wt%, Na_
A method for producing an enamel substrate for a solar cell, comprising applying a frit containing 10 to 30 wt% of 2O, 36 to 20 wt% of B_2O_, and 10 to 35 wt% of PbO.
施し、ガラス層を形成する太陽電池用ほうろう基板の製
造方法において、ＳｉＯ＿２４０〜６５ｗｔ％、Ｎａ＿
２Ｏ１０〜３０ｗｔ％、Ｂ＿２Ｏ＿３６〜２０ｗｔ％及
びＰｂＯ１０〜３５ｗｔ％を主成分とし、さらにＫ＿２
Ｏ２〜５ｗｔ％、ＴｉＯ＿２５〜８ｗｔ％、ＣａＯ０．
５〜３．０ｗｔ％の１種又は２種以上を含有するフリッ
トを施すことを特徴とする太陽電池用ほうろう基板の製
造方法。(2) A method for manufacturing an enameled solar cell substrate in which a frit is applied to at least one side of a stainless steel strip to form a glass layer, in which SiO_240 to 65 wt%, Na_
The main components are 10-30 wt% of 2O, 36-20 wt% of B_2O_36-20 wt% and 10-35 wt% of PbO, and further K_2
O2~5wt%, TiO_25~8wt%, CaO0.
A method for manufacturing an enamel substrate for a solar cell, comprising applying a frit containing 5 to 3.0 wt% of one or more types.
ロイダルシリカを添加した、粘土を含まないスリツプを
施すことを特徴とする特許請求の範囲第１項又は第２項
記載の太陽電池用ほうろう基板の製造方法。(3) A solar cell according to claim 1 or 2, characterized in that a clay-free slip is applied to which 1 to 5 parts by weight of colloidal silica is added to 100 parts by weight of the frit. Method for manufacturing enamel substrate.
徴とする特許請求の範囲第１項〜第３項の中のいずれか
１項の記載の太陽電池用ほうろう基板の製造方法。(4) The method for manufacturing an enamel substrate for a solar cell according to any one of claims 1 to 3, wherein the glass layer has a thickness of 17 to 50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61119136A JPS62276883A (en) | 1986-05-26 | 1986-05-26 | Manufacture of enamel substrate for solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61119136A JPS62276883A (en) | 1986-05-26 | 1986-05-26 | Manufacture of enamel substrate for solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62276883A true JPS62276883A (en) | 1987-12-01 |
Family
ID=14753827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61119136A Pending JPS62276883A (en) | 1986-05-26 | 1986-05-26 | Manufacture of enamel substrate for solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62276883A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011075967A1 (en) * | 2009-12-24 | 2011-06-30 | 四会市维力有限公司 | Enamel solar building wall panel |
| JP2014107510A (en) * | 2012-11-29 | 2014-06-09 | Showa Shell Sekiyu Kk | Compound thin film solar cell |
| JP2014110349A (en) * | 2012-12-03 | 2014-06-12 | Showa Shell Sekiyu Kk | Method for manufacturing thin-film solar cell |
-
1986
- 1986-05-26 JP JP61119136A patent/JPS62276883A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011075967A1 (en) * | 2009-12-24 | 2011-06-30 | 四会市维力有限公司 | Enamel solar building wall panel |
| JP2014107510A (en) * | 2012-11-29 | 2014-06-09 | Showa Shell Sekiyu Kk | Compound thin film solar cell |
| JP2014110349A (en) * | 2012-12-03 | 2014-06-12 | Showa Shell Sekiyu Kk | Method for manufacturing thin-film solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1089497A (en) | Lead-free glaze for alumina bodies | |
| US4746578A (en) | Glaze compositions for ceramic substrates | |
| JP2002531360A5 (en) | ||
| JP2017537051A (en) | Chemically temperable glass plate | |
| JP2006206430A (en) | Lead-free and cadmium-free glass for glazing, enameling and decoration of glass or glass-ceramic | |
| CA2797415A1 (en) | Glass substrates for high temperature applications | |
| JP2018127396A (en) | Glass having improved ion-exchanging and thermally expanding properties | |
| US2930713A (en) | Vitreous enamel frit | |
| US3389002A (en) | Heat and corrosion resistant coating composition | |
| US5198393A (en) | Rare earth-containing frits having a high glass transition temperature and their use for the production of enamels having improved heat resistance | |
| JPH0825772B2 (en) | Glass for electronic device substrates | |
| JPS62276883A (en) | Manufacture of enamel substrate for solar cell | |
| US2909438A (en) | Vitreous enamel compositions for aluminum and its alloys | |
| CN114379240B (en) | Thermal print head substrate with composite lead-free protective layer and manufacturing method thereof | |
| WO2017082311A1 (en) | Glass for air-quench tempering and air-quenched tempered glass | |
| US3061449A (en) | Vitreous enamel frit | |
| JP2018203571A (en) | Glass | |
| JP2018505117A (en) | Chemically temperable glass plate | |
| JPS58130547A (en) | Silicon carbide substrate and manufacture thereof | |
| JPS6342705B2 (en) | ||
| JPH028975B2 (en) | ||
| JP2019001662A (en) | Glass for wind cooling strengthening, and wind cooled strengthen glass | |
| JPH0148210B2 (en) | ||
| JP2024031221A (en) | Glaze for porcelain and porcelain | |
| JPS5558372A (en) | Substrate |