JPS6227543B2 - - Google Patents
Info
- Publication number
- JPS6227543B2 JPS6227543B2 JP9453786A JP9453786A JPS6227543B2 JP S6227543 B2 JPS6227543 B2 JP S6227543B2 JP 9453786 A JP9453786 A JP 9453786A JP 9453786 A JP9453786 A JP 9453786A JP S6227543 B2 JPS6227543 B2 JP S6227543B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal silicon
- single crystal
- silicon island
- island
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000010354 integration Effects 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000002955 isolation Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9453786A JPS61234054A (ja) | 1986-04-25 | 1986-04-25 | 集積半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9453786A JPS61234054A (ja) | 1986-04-25 | 1986-04-25 | 集積半導体装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13002679A Division JPS5655061A (en) | 1979-10-11 | 1979-10-11 | Integrated semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61234054A JPS61234054A (ja) | 1986-10-18 |
| JPS6227543B2 true JPS6227543B2 (enrdf_load_stackoverflow) | 1987-06-15 |
Family
ID=14113068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9453786A Granted JPS61234054A (ja) | 1986-04-25 | 1986-04-25 | 集積半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61234054A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3124085B2 (ja) * | 1991-12-02 | 2001-01-15 | 沖電気工業株式会社 | 半導体装置 |
-
1986
- 1986-04-25 JP JP9453786A patent/JPS61234054A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61234054A (ja) | 1986-10-18 |
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