JPS62269325A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS62269325A
JPS62269325A JP11306286A JP11306286A JPS62269325A JP S62269325 A JPS62269325 A JP S62269325A JP 11306286 A JP11306286 A JP 11306286A JP 11306286 A JP11306286 A JP 11306286A JP S62269325 A JPS62269325 A JP S62269325A
Authority
JP
Japan
Prior art keywords
semiconductor
die pad
heat
bonded
thermal contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11306286A
Other languages
Japanese (ja)
Inventor
Katsuyuki Fukutome
Ryuichiro Mori
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11306286A priority Critical patent/JPS62269325A/en
Publication of JPS62269325A publication Critical patent/JPS62269325A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the stress to be imposed upon a semiconductor element and to improve its heat-radiating feature by a method wherein a mount for a semiconductor element is built of an heat-conducting organic material.
CONSTITUTION: A die pad 3' is built of a heat-conducting organic material, for example, a sheet suitable for treatment by thermal contact bonding, which is bonded to the rear side of a lead frame 2 at whose middle there is a radiating formation. Further, a semiconductor element 1 is bonded to the die pad 3, by means of thermal contact bonding. With the semiconductor element 1 being bonded to the die pad 3' by means of thermal contact bonding without employing any bonding agent, the die pad 3, that is softer than the semiconductor element 1 expands first and allows the semiconductor element 1 to be deformed less, in the presence of difference in thermal expansion between the die pad 3' and semiconductor element 1. This design reduces the stress that may be imposed on the semiconductor element 1 and its heat-radiating feature is improved.
COPYRIGHT: (C)1987,JPO&Japio
JP11306286A 1986-05-16 1986-05-16 Semiconductor device Pending JPS62269325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11306286A JPS62269325A (en) 1986-05-16 1986-05-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11306286A JPS62269325A (en) 1986-05-16 1986-05-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS62269325A true JPS62269325A (en) 1987-11-21

Family

ID=14602532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11306286A Pending JPS62269325A (en) 1986-05-16 1986-05-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS62269325A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179351A (en) * 1987-12-30 1989-07-17 Fujitsu Ltd Plastic-molded semiconductor device and its manufacture
JPH01120356U (en) * 1988-02-05 1989-08-15
JPH01257360A (en) * 1988-04-06 1989-10-13 Nec Corp Lead frame for semiconductor device
US5305344A (en) * 1993-04-29 1994-04-19 Opto Power Corporation Laser diode array

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834934A (en) * 1981-08-26 1983-03-01 Toshiba Corp Semiconductor device
JPS5979536A (en) * 1982-10-29 1984-05-08 Nec Corp Resin-sealed type semiconductor device
JPS6089948A (en) * 1983-10-24 1985-05-20 Toshiba Corp Lead frame

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834934A (en) * 1981-08-26 1983-03-01 Toshiba Corp Semiconductor device
JPS5979536A (en) * 1982-10-29 1984-05-08 Nec Corp Resin-sealed type semiconductor device
JPS6089948A (en) * 1983-10-24 1985-05-20 Toshiba Corp Lead frame

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01179351A (en) * 1987-12-30 1989-07-17 Fujitsu Ltd Plastic-molded semiconductor device and its manufacture
JPH01120356U (en) * 1988-02-05 1989-08-15
JPH01257360A (en) * 1988-04-06 1989-10-13 Nec Corp Lead frame for semiconductor device
US5305344A (en) * 1993-04-29 1994-04-19 Opto Power Corporation Laser diode array

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