JPS62241377A - Thin film transistor and manufacture thereof - Google Patents

Thin film transistor and manufacture thereof

Info

Publication number
JPS62241377A
JPS62241377A JP8386786A JP8386786A JPS62241377A JP S62241377 A JPS62241377 A JP S62241377A JP 8386786 A JP8386786 A JP 8386786A JP 8386786 A JP8386786 A JP 8386786A JP S62241377 A JPS62241377 A JP S62241377A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
electrode
conductive films
transparent conductive
resist
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8386786A
Inventor
Hiroyuki Hebiguchi
Satoru Ito
Yasuhiko Kasama
Kazuya Okabe
Makoto Sasaki
Hitoshi Seki
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To enable self-alignment through methods except a lift-off method, to avoid a malfunction due to the interposition, etc. of a resist residue and to improve yield by constituting a source electrode and a drain electrode of transparent conductive films. CONSTITUTION:With a thin-film transistor, a gate electrode 22, a gate insulating film 23 and a semiconductor layer 24 are laminated on a transparent insulating substrate 21 in succession, a source electrode 25 and a drain electrode 26 are formed, holding a channel section 27 on the semiconductor layer 24, and the source electrode 25 and the drain electrode 26 are constituted of transparent conductive films. A negative type resist 29 is applied onto the transparent conductive films 28 and beams are irradiated from the back side of the insulating substrate 21, and the resist 29 in a section corresponding to the gate electrode 29 is removed, thus etching only the section corresponding to the gate electrode 22, then allowing self-alignment.
JP8386786A 1986-04-11 1986-04-11 Thin film transistor and manufacture thereof Pending JPS62241377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8386786A JPS62241377A (en) 1986-04-11 1986-04-11 Thin film transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8386786A JPS62241377A (en) 1986-04-11 1986-04-11 Thin film transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS62241377A true true JPS62241377A (en) 1987-10-22

Family

ID=13814616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8386786A Pending JPS62241377A (en) 1986-04-11 1986-04-11 Thin film transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS62241377A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure
US5366912A (en) * 1988-09-21 1994-11-22 Fuji Xerox Co., Ltd. Fabrication method of thin-film transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366912A (en) * 1988-09-21 1994-11-22 Fuji Xerox Co., Ltd. Fabrication method of thin-film transistor
US5010027A (en) * 1990-03-21 1991-04-23 General Electric Company Method for fabricating a self-aligned thin-film transistor utilizing planarization and back-side photoresist exposure

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