JPS62211946A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS62211946A
JPS62211946A JP5374886A JP5374886A JPS62211946A JP S62211946 A JPS62211946 A JP S62211946A JP 5374886 A JP5374886 A JP 5374886A JP 5374886 A JP5374886 A JP 5374886A JP S62211946 A JPS62211946 A JP S62211946A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
formed
semiconductor
memory cell
consisting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5374886A
Inventor
Masamizu Konaka
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout

Abstract

PURPOSE:To prevent the occurrence of a punch-through phenomenon between capacitor passive elements as well as to contrive accomplishment of high integration by a method wherein a memory cell 3 is arranged three-dimensionally in a highly efficient manner. CONSTITUTION:A semiconductor element, consisting of a gate 105 and a source 104, is provided on a substrate 101, and the first semiconductor layer 102a and the second semiconductor layer 102b are formed on the above-mentioned semiconductor element through the intermediary of insulating films 106 and 106a. A one transistor/one capacitor memory cell is formed on said semiconductor layers. To be more precise, a transfer gate metal oxide semiconductor field effect transistor (MOSFET), consisting of a gate insulating film 103a, a source and drain diffusion layer 104a and a gate electrode 105a, is formed in the first layer of semiconductor layer 102a, and a vertical type memory cell, consisting of a low impurity density layer 107a, a thin insulating layer 109a and a cell-plate electrode 110, is formed. A transfer gate MOSFET and a vertical type memory cell are formed in the second layer of semiconductor layer 102b in the same manner as above-mentioned.
JP5374886A 1986-03-13 1986-03-13 Semiconductor memory Pending JPS62211946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5374886A JPS62211946A (en) 1986-03-13 1986-03-13 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5374886A JPS62211946A (en) 1986-03-13 1986-03-13 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS62211946A true true JPS62211946A (en) 1987-09-17

Family

ID=12951428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5374886A Pending JPS62211946A (en) 1986-03-13 1986-03-13 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS62211946A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216766A (en) * 1988-07-05 1990-01-19 Toshiba Corp Semiconductor memory device
US5057888A (en) * 1991-01-28 1991-10-15 Micron Technology, Inc. Double DRAM cell
US5468979A (en) * 1992-04-30 1995-11-21 Nippon Steel Corporation Semiconductor device having trench type capacitors formed completely within an insulating layer
KR100596486B1 (en) 2005-05-23 2006-06-27 삼성전자주식회사 Stacked semiconductor device and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216766A (en) * 1988-07-05 1990-01-19 Toshiba Corp Semiconductor memory device
US5057888A (en) * 1991-01-28 1991-10-15 Micron Technology, Inc. Double DRAM cell
US5468979A (en) * 1992-04-30 1995-11-21 Nippon Steel Corporation Semiconductor device having trench type capacitors formed completely within an insulating layer
KR100596486B1 (en) 2005-05-23 2006-06-27 삼성전자주식회사 Stacked semiconductor device and method of manufacturing the same

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