JPS6220226A - Ion beam exposure device - Google Patents

Abstract

PURPOSE:To enhance controllability of an ion beam direction, by providing an ion beam path shutdown means composed of a cylindrical metal member which is movable between the position enclosing an ion beam path and the outer side of the path. CONSTITUTION:An ion beam path shutdown means 12 is composed of a cylindrical metal member 5 and its supporting insulating rod 6, and can be moved between the position enclosing an ion beam path and the outer side of said path by a driving device 13 which is fixed to an outer box 15 via a supporting device 14. In an ion beam exposure device, which has the above described constitution, the ion beam path is enclosed by a cylindrical member 5 insulated from the earth by the insulating rod 6 and isolated from the earth potential of an axial alignment device 17 or the like. As a result, the distortion of the ion beam orbit can be avoided since the electric field in the area is prevented from being disturbed, and accurate ion radiation can be performed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Summary] This is an improvement of an ion beam exposure apparatus using a field ionization type gas ion source.

During ion beam exposure (
When the alignment device is not in use), the ion beam path near the alignment device is shielded with a metal cylindrical member to eliminate the influence of the electrostatic field on the ion beam due to the presence of the alignment device when it is not in use. This improves the beam direction controllability of the ion beam.

[Industrial application field]

The present invention relates to an ion beam exposure apparatus. In particular, the present invention relates to an improvement in improving the directional controllability of an ion beam in an ion beam exposure apparatus using a field ionization type gas ion source.

[Conventional technology]

Ion beam exposure equipment, which is superior to electron beam haze lithography equipment in that it is less affected by the proximity effect, uses either an ion beam exposure equipment that uses a field ionization type gas ion source or a liquid metal ion source, depending on the ion source used. It is broadly divided into ion beam exposure equipment.

Furthermore, ion beam exposure equipment that uses a field ionization gas ion source has a narrower energy distribution than ion beam exposure equipment that uses a liquid metal ion source (all ions have the same energy). ), when focusing using an electrostatic lens, a narrow ion beam with a small cross section can be created with little variation in refraction angle (small chromatic aberration), and the energy of each ion is generally the same ( Therefore, the ion beam irradiated onto the resist reaches a uniform depth within the resist, so there is an advantage that it does not adversely affect the substrate.

However, since the field ionization type gas ion source emits radiation only from the region of high electric field strength on the surface of the emitter chip, it is not necessarily the case that the radiation is uniformly emitted from the entire surface of the emitter chip.

Therefore, in order to obtain an ion beam with high power density, it is necessary to adjust the direction of the emitter tip and align the axes so that the ion beam with the highest current intensity is selected.

In order to make this alignment possible, in an ion beam exposure apparatus using a field ionization type gas ion source according to the prior art, a microchannel plate 2 with a fluorescent screen and a mirror 3 are connected to each other, as shown in FIG. It is equipped with an axis alignment device 17 consisting of a combination of. In the figure, l
is a field ionization type gas ion source, 4 is a first stage lens, 7 is a blanking electrode, 8 is a second stage lens, 9 is a deflector, 1o is a wafer, 1
1 is a stage.

The axis alignment device 17 described in 1- is movable in a direction perpendicular to the beam direction of the ion beam.
7 is used, it is brought into the ion beam path as shown and the FIM image developed on mirror 3 is observed.

After completing the alignment, the alignment device 17 is moved out of the ion beam path for exposure.

[Problem that the invention seeks to solve]

In order to perform exposure, it is necessary to accelerate the ions, but
This ion acceleration voltage is generally applied between the ion source l and the first stage lens 4. That is, the region between the ion source 1 and the first stage lens 4 has a high electric field strength. However, the above-mentioned axis alignment device 17 exists near this region, and although this alignment device 17 is normally at ground potential, since this alignment device 17 is generally a conductor,
This has the disadvantage that it disturbs the electric field in the region between the ions @l and the first stage lens 4, distorts the trajectory of the ion beam, and prevents accurate ion irradiation.

An object of the present invention is to eliminate this drawback, and to provide an improvement that improves the directional controllability of an ion beam in an ion beam exposure apparatus using a field ionization type gas ion source.

[Means for solving problems]

The means taken by the present invention to achieve the above object is, as shown in FIG. An ion beam exposure apparatus that uses a field ionization type gas ion source is equipped with an ion beam consisting of a metal cylindrical member 5 that is movable between a position surrounding an ion beam path and an outside of this ion beam path. This is due to the addition of passage blocking means 12.

[Effect]

The above drawback is caused by the generation of an electrostatic field between the alignment device and the ion beam path, which is generally at ground potential when not in use (during ion beam exposure). This should be resolved by preventing the occurrence of this problem, and for that purpose, it would be better to increase the potential of the alignment device, isolate the alignment device far away, or electrostatically shield the ion beam path. be. In the present invention,
Of these various possible means, this is the simplest,
As it is practically possible and has sufficient effect, we decided to provide a shielding means surrounding the ion beam path, and we decided to arrange this in a replaceable manner with the axis alignment device described in L. be.

〔Example〕

DESCRIPTION OF THE PREFERRED EMBODIMENTS An ion beam exposure apparatus according to an embodiment of the present invention will be further described below with reference to the drawings.

In the diagram shown in FIG. 1, ■ is a field ionization type gas ion source, 4 is a first stage lens, 7 is a blanking electrode, and 2 is a field ionization type gas ion source.
is a microchannel plate with a fluorescent screen, and 3 is a mirror, and these 2.3 constitute an alignment device 17. 8 is a second stage lens, 9 is a deflector, 10 is a wafer, and 11 is a stage. 15 is an outer box of the ion beam exposure apparatus.

Reference numeral 12 denotes an ion beam path shielding means according to the gist of the present invention, which is composed of a metal cylindrical member 5 and an insulating rod 6 that supports it, and is driven by a drive unit N13 fixed to an outer box 15 by a support device 14. , is movable between a position surrounding the ion beam path and a position outside the ion beam path. The position shown with a solid line shows the position in the ion beam exposure state, and the position shown with a broken line shows the position in the axis alignment state.

On the other hand, the axis alignment device 17 is also movable between the position where the ion beam path is formed and the outside of the ion beam path, and therefore the outer box 15 is provided with a bellows portion 16. The positions indicated by solid lines indicate the positions in the ion beam exposure state. In the aligned state, the ion beam path shielding means 12 moves to the position shown in solid lines in the figure.

In the ion beam exposure apparatus having the structure shown below, in the ion beam exposure state, the ion beam passage is surrounded by the metal cylindrical member 5 which is insulated from the ground by the insulating rod 6, Since it is shielded from the ground potential of the alignment device 17 and the like, the electric field is not disturbed in this region, and therefore the trajectory of the ion beam is not distorted, allowing accurate ion irradiation.

〔Effect of the invention〕

As explained below, the ion beam exposure apparatus according to the present invention uses a field ionization type gas ion source, and has an axis movable between a position where an ion beam path is formed and the outside of this ion beam path. Equipped with a matching device,
Furthermore, an ion beam path shielding means made of a metal cylindrical member that is movable between a position surrounding the ion beam path and the outside of the ion beam path is provided to shield the ion beam path during ion beam exposure. Therefore, even if an alignment device that is normally at ground potential exists near this ion beam path, the electric field will not be disturbed near the ion beam path, and the trajectory of the ion beam will therefore be Accurate ion irradiation is performed without distortion.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of an ion beam exposure apparatus according to an embodiment of the present invention. FIG. 2 is a configuration diagram of an ion beam exposure apparatus according to the prior art. ■+1... Field ionization type gas ion whale, 2... Micro channel plate with fluorescent screen, 3...
Mirror, 4, ψ, first stage lens, 5, fist, metal cylindrical member, 6, insulating rod, 7, blanking electrode, 8, second stage lens, 91, deflector, 10-
- Wafer, 11-- Stage, 12... Ion beam path shielding means, 13... Drive device, 14
... Support device, 15-φ ion beam exposure device outer box, No. 16 bellows part, No. 17... Axis alignment device. The main text: 1 Figure promotion technology Figure 2

Claims (1)

[Claims] An axis alignment device (1) movable between a region corresponding to an ion beam path and a region not corresponding to the ion beam path.
7) An ion beam exposure apparatus using a field ionization type gas ion source, comprising: a metal cylindrical member movable between a position surrounding the ion beam path and an area not corresponding to the ion beam path; Element(
5) An ion beam exposure apparatus characterized in that the ion beam path shielding means (12) is provided.