JPS62196885A - Manufacture of semiconductor laser array - Google Patents

Manufacture of semiconductor laser array

Info

Publication number
JPS62196885A
JPS62196885A JP3964986A JP3964986A JPS62196885A JP S62196885 A JPS62196885 A JP S62196885A JP 3964986 A JP3964986 A JP 3964986A JP 3964986 A JP3964986 A JP 3964986A JP S62196885 A JPS62196885 A JP S62196885A
Authority
JP
Japan
Prior art keywords
mesa
layer
heights
semiconductor laser
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3964986A
Other languages
Japanese (ja)
Inventor
Masanori Hirose
Takashi Sugino
Atsuya Yamamoto
Akio Yoshikawa
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP3964986A priority Critical patent/JPS62196885A/en
Publication of JPS62196885A publication Critical patent/JPS62196885A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To monolithically integrate lasers having different oscillating wavelengths by providing mesa having different heights on the same substrate.
CONSTITUTION: A mesa 9a of 1.5μm high, a mesa 9b of 3.0μm high and a mesa 9c of 4.5μm high are formed in 20μm of width on a conductive P-type GaAs substrate 1. A P-type AlyGa1-yAs clad layer 2, an AlxGa1-xAs active layer 3, an N-type AlyGa1-yAs clad layer 4 and an N-type GaAs cap layer 5 are sequentially grown thereon, and an SiO2 oxide film 6 is formed on the layer 5 to form a stripe window. When the heights of the mesa 9a∼9c formed on the substrate 1 are varied and a semiconductor laser is liquid grown on the mesas, the active layers of different thicknesses are formed in response to the heights of the means 9a∼9c even if the growth of the active layer is once.
COPYRIGHT: (C)1987,JPO&Japio
JP3964986A 1986-02-24 1986-02-24 Manufacture of semiconductor laser array Pending JPS62196885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3964986A JPS62196885A (en) 1986-02-24 1986-02-24 Manufacture of semiconductor laser array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3964986A JPS62196885A (en) 1986-02-24 1986-02-24 Manufacture of semiconductor laser array

Publications (1)

Publication Number Publication Date
JPS62196885A true JPS62196885A (en) 1987-08-31

Family

ID=12558928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3964986A Pending JPS62196885A (en) 1986-02-24 1986-02-24 Manufacture of semiconductor laser array

Country Status (1)

Country Link
JP (1) JPS62196885A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013150465A1 (en) 2012-04-03 2013-10-10 ベバスト エスエー Drive device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013150465A1 (en) 2012-04-03 2013-10-10 ベバスト エスエー Drive device
US20150038291A1 (en) * 2012-04-03 2015-02-05 Webasto SE Drive device
US9667120B2 (en) * 2012-04-03 2017-05-30 Webasto SE Drive device

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