JPS62165370A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
JPS62165370A
JPS62165370A JP691386A JP691386A JPS62165370A JP S62165370 A JPS62165370 A JP S62165370A JP 691386 A JP691386 A JP 691386A JP 691386 A JP691386 A JP 691386A JP S62165370 A JPS62165370 A JP S62165370A
Authority
JP
Japan
Prior art keywords
end surfaces
formed
erasing
electrode
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP691386A
Inventor
Toshiki Tsushima
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP691386A priority Critical patent/JPS62165370A/en
Publication of JPS62165370A publication Critical patent/JPS62165370A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To realize uniform writing characteristics and erasing characteristics by a method wherein an erasing electrode is formed to have a trapezoid cross section and its end surfaces are tapered and end surfaces of floating gate electrodes are formed to have reverse tapers which are complementary to the end surfaces of the erasing electrode and those electrodes are made to overlap each other along the tapered end surfaces with thin insulating films between.
CONSTITUTION: An erasing electrode 5 is formed to have a trapezoid cross section and its end surfaces are tapered. On the other hand, end surfaces of floating gate electrodes 41 and 42 are formed to have reverse tapers which are complementary to the end surfaces of the erasing electrode 5. The erasing electrode 5 and the floating gate electrodes 41 and 42 are made to overlap each other along their tapered end surfaces with this oxide films 6 between. Moreover, as the thickness of the erasing electrode 5 and the thicknesses of the floating gate electrodes 41 and 42 are approximately equal, almost no difference in levels exists between those electrodes so that a continuous flat surface can be formed. As a result, a control gate electrode 8 which is laminated on the electrodes 5, 41 and 42 with a thin oxide film 7 between also has very little difference in level and provides excellent flatness.
COPYRIGHT: (C)1987,JPO&Japio
JP691386A 1986-01-16 1986-01-16 Non-volatile semiconductor memory device Pending JPS62165370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP691386A JPS62165370A (en) 1986-01-16 1986-01-16 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP691386A JPS62165370A (en) 1986-01-16 1986-01-16 Non-volatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS62165370A true JPS62165370A (en) 1987-07-21

Family

ID=11651475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP691386A Pending JPS62165370A (en) 1986-01-16 1986-01-16 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS62165370A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03240275A (en) * 1990-02-19 1991-10-25 Toshiba Corp Nonvolatile semiconductor device
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
JPH07130894A (en) * 1993-10-28 1995-05-19 Gold Star Electron Co Ltd Eeprom flash memory cell, memory device and their manufacture
US5554553A (en) * 1988-06-08 1996-09-10 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5554553A (en) * 1988-06-08 1996-09-10 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
JPH03240275A (en) * 1990-02-19 1991-10-25 Toshiba Corp Nonvolatile semiconductor device
JPH07130894A (en) * 1993-10-28 1995-05-19 Gold Star Electron Co Ltd Eeprom flash memory cell, memory device and their manufacture

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