JPS6216028B2 - - Google Patents

Info

Publication number
JPS6216028B2
JPS6216028B2 JP57050092A JP5009282A JPS6216028B2 JP S6216028 B2 JPS6216028 B2 JP S6216028B2 JP 57050092 A JP57050092 A JP 57050092A JP 5009282 A JP5009282 A JP 5009282A JP S6216028 B2 JPS6216028 B2 JP S6216028B2
Authority
JP
Japan
Prior art keywords
region
type
conductivity type
memory device
word line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57050092A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58168273A (ja
Inventor
Yoshinori Okajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57050092A priority Critical patent/JPS58168273A/ja
Priority to DE8383301824T priority patent/DE3380004D1/de
Priority to EP83301824A priority patent/EP0090665B1/fr
Publication of JPS58168273A publication Critical patent/JPS58168273A/ja
Priority to US06/881,475 priority patent/US4677455A/en
Publication of JPS6216028B2 publication Critical patent/JPS6216028B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP57050092A 1982-03-20 1982-03-30 半導体記憶装置 Granted JPS58168273A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57050092A JPS58168273A (ja) 1982-03-30 1982-03-30 半導体記憶装置
DE8383301824T DE3380004D1 (en) 1982-03-30 1983-03-30 Semiconductor memory device
EP83301824A EP0090665B1 (fr) 1982-03-30 1983-03-30 Dispositif semi-conducteur à mémoire
US06/881,475 US4677455A (en) 1982-03-20 1986-07-01 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57050092A JPS58168273A (ja) 1982-03-30 1982-03-30 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS58168273A JPS58168273A (ja) 1983-10-04
JPS6216028B2 true JPS6216028B2 (fr) 1987-04-10

Family

ID=12849402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57050092A Granted JPS58168273A (ja) 1982-03-20 1982-03-30 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS58168273A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6740958B2 (en) 1985-09-25 2004-05-25 Renesas Technology Corp. Semiconductor memory device
US5324982A (en) 1985-09-25 1994-06-28 Hitachi, Ltd. Semiconductor memory device having bipolar transistor and structure to avoid soft error

Also Published As

Publication number Publication date
JPS58168273A (ja) 1983-10-04

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