JPS62152192A - 垂直発振型レーザ - Google Patents
垂直発振型レーザInfo
- Publication number
- JPS62152192A JPS62152192A JP29648185A JP29648185A JPS62152192A JP S62152192 A JPS62152192 A JP S62152192A JP 29648185 A JP29648185 A JP 29648185A JP 29648185 A JP29648185 A JP 29648185A JP S62152192 A JPS62152192 A JP S62152192A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- laser
- hetero
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000010355 oscillation Effects 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000005253 cladding Methods 0.000 claims description 52
- 125000005842 heteroatom Chemical group 0.000 claims description 24
- 230000003213 activating effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 155
- 239000010408 film Substances 0.000 description 43
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 230000012010 growth Effects 0.000 description 14
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 13
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 238000004943 liquid phase epitaxy Methods 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000002023 wood Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29648185A JPS62152192A (ja) | 1985-12-25 | 1985-12-25 | 垂直発振型レーザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29648185A JPS62152192A (ja) | 1985-12-25 | 1985-12-25 | 垂直発振型レーザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62152192A true JPS62152192A (ja) | 1987-07-07 |
| JPH0257708B2 JPH0257708B2 (enrdf_load_stackoverflow) | 1990-12-05 |
Family
ID=17834113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29648185A Granted JPS62152192A (ja) | 1985-12-25 | 1985-12-25 | 垂直発振型レーザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62152192A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02120093A (ja) * | 1988-10-28 | 1990-05-08 | Ibiden Co Ltd | Ｉｃカード用プリント配線板とその製造方法 |
| US5068869A (en) * | 1987-06-19 | 1991-11-26 | Lockheed Missiles & Space Company, Inc. | Surface-emitting laser diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104188A (ja) * | 1982-12-07 | 1984-06-15 | Toshiba Corp | 半導体レ−ザ装置 |
| JPS59152683A (ja) * | 1983-02-21 | 1984-08-31 | Nec Corp | 面発光半導体レ−ザ |
-
1985
- 1985-12-25 JP JP29648185A patent/JPS62152192A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104188A (ja) * | 1982-12-07 | 1984-06-15 | Toshiba Corp | 半導体レ−ザ装置 |
| JPS59152683A (ja) * | 1983-02-21 | 1984-08-31 | Nec Corp | 面発光半導体レ−ザ |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5068869A (en) * | 1987-06-19 | 1991-11-26 | Lockheed Missiles & Space Company, Inc. | Surface-emitting laser diode |
| JPH02120093A (ja) * | 1988-10-28 | 1990-05-08 | Ibiden Co Ltd | Ｉｃカード用プリント配線板とその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0257708B2 (enrdf_load_stackoverflow) | 1990-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |