JPS62147774A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS62147774A
JPS62147774A JP28880385A JP28880385A JPS62147774A JP S62147774 A JPS62147774 A JP S62147774A JP 28880385 A JP28880385 A JP 28880385A JP 28880385 A JP28880385 A JP 28880385A JP S62147774 A JPS62147774 A JP S62147774A
Authority
JP
Japan
Prior art keywords
form
insulating film
oxide film
thereon
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28880385A
Inventor
Hidetoshi Nakada
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP28880385A priority Critical patent/JPS62147774A/en
Publication of JPS62147774A publication Critical patent/JPS62147774A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To enable an equivalent resistance received by a current to be reduced to run a large current, by laminating polysilicon containing an impurity of secondary conductive type over a pair of low impurity concentration areas.
CONSTITUTION: Both a gate insulating film 14 and an element separable insulating film 13 are formed on a semiconductor substrate of primary conductive type. A polycrystalline silicon layer 15 is then formed thereon, over which phosphorus is diffused. A flattening substance coat 15b is formed thereon, which is then etched back to form a gate electrode 15b. Using it as a mask, the insulating film 14 is removed to carry out a wet oxidization at a low temperature, thus forming a thicker oxide film 16a on the electrode surface than an oxide film 16b. Leaving the oxide film 16a, then, the oxide film 16b is removed by etching to form a polycrystalline silicon layer 17a thereon, over which phosphorus is diffused. Likely leaving the polycrystalline silicon layer 17a only along the side walls of the gate electrode 15b and using it as a mask, an anisotropic etching is carried out to form a highly-concentrated diffusion layer 18c thereon by the ion implantation method. Thermal treating at a high temperature forms a lowly-concentrated diffusion layer 18b. Then a between-layers insulating film 19 is formed, in which a hole 19b is opened to form a take-out electrode 10.
COPYRIGHT: (C)1987,JPO&Japio
JP28880385A 1985-12-20 1985-12-20 Semiconductor device and its manufacture Pending JPS62147774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28880385A JPS62147774A (en) 1985-12-20 1985-12-20 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28880385A JPS62147774A (en) 1985-12-20 1985-12-20 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPS62147774A true JPS62147774A (en) 1987-07-01

Family

ID=17734932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28880385A Pending JPS62147774A (en) 1985-12-20 1985-12-20 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS62147774A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02100326A (en) * 1988-10-06 1990-04-12 Nec Corp Manufacture of mos type semiconductor device high in breakdown strength
US5079180A (en) * 1988-12-22 1992-01-07 Texas Instruments Incorporated Method of fabricating a raised source/drain transistor
US5089435A (en) * 1987-05-27 1992-02-18 Nec Corporation Method of making a field effect transistor with short channel length
JP2007165853A (en) * 2005-10-19 2007-06-28 Seiko Instruments Inc Semiconductor integrated circuit device and manufacturing method thereof
JP2009191680A (en) * 2008-02-13 2009-08-27 Ogino Kogyo Kk Oil jet device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089435A (en) * 1987-05-27 1992-02-18 Nec Corporation Method of making a field effect transistor with short channel length
JPH02100326A (en) * 1988-10-06 1990-04-12 Nec Corp Manufacture of mos type semiconductor device high in breakdown strength
US5030584A (en) * 1988-10-06 1991-07-09 Nec Corporation Method for fabricating MOS semiconductor device operable in a high voltage range using polysilicon outdiffusion
US5079180A (en) * 1988-12-22 1992-01-07 Texas Instruments Incorporated Method of fabricating a raised source/drain transistor
JP2007165853A (en) * 2005-10-19 2007-06-28 Seiko Instruments Inc Semiconductor integrated circuit device and manufacturing method thereof
TWI423343B (en) * 2005-10-19 2014-01-11 Seiko Instr Inc A semiconductor integrated circuit device and a manufacturing method for the same
JP2009191680A (en) * 2008-02-13 2009-08-27 Ogino Kogyo Kk Oil jet device

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