JPS62145719A - 半導体薄膜結晶層の製造方法 - Google Patents

半導体薄膜結晶層の製造方法

Info

Publication number
JPS62145719A
JPS62145719A JP28543385A JP28543385A JPS62145719A JP S62145719 A JPS62145719 A JP S62145719A JP 28543385 A JP28543385 A JP 28543385A JP 28543385 A JP28543385 A JP 28543385A JP S62145719 A JPS62145719 A JP S62145719A
Authority
JP
Japan
Prior art keywords
film
thin film
semiconductor thin
layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28543385A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0243331B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Toshio Yoshii
俊夫 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP28543385A priority Critical patent/JPS62145719A/ja
Publication of JPS62145719A publication Critical patent/JPS62145719A/ja
Publication of JPH0243331B2 publication Critical patent/JPH0243331B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
JP28543385A 1985-12-20 1985-12-20 半導体薄膜結晶層の製造方法 Granted JPS62145719A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28543385A JPS62145719A (ja) 1985-12-20 1985-12-20 半導体薄膜結晶層の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28543385A JPS62145719A (ja) 1985-12-20 1985-12-20 半導体薄膜結晶層の製造方法

Publications (2)

Publication Number Publication Date
JPS62145719A true JPS62145719A (ja) 1987-06-29
JPH0243331B2 JPH0243331B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-09-28

Family

ID=17691458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28543385A Granted JPS62145719A (ja) 1985-12-20 1985-12-20 半導体薄膜結晶層の製造方法

Country Status (1)

Country Link
JP (1) JPS62145719A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276614A (ja) * 1988-04-28 1989-11-07 Agency Of Ind Science & Technol Ｓｏｉ膜形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPL.PHYS.LETT.=1982 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01276614A (ja) * 1988-04-28 1989-11-07 Agency Of Ind Science & Technol Ｓｏｉ膜形成方法

Also Published As

Publication number Publication date
JPH0243331B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-09-28

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term