JPS62141717A - Growing method for atomic layer level zincblende-type crystal and its device - Google Patents

Growing method for atomic layer level zincblende-type crystal and its device

Info

Publication number
JPS62141717A
JPS62141717A JP28413285A JP28413285A JPS62141717A JP S62141717 A JPS62141717 A JP S62141717A JP 28413285 A JP28413285 A JP 28413285A JP 28413285 A JP28413285 A JP 28413285A JP S62141717 A JPS62141717 A JP S62141717A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
evaporative
plane
substrate
jars
atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28413285A
Inventor
Koji Ebe
Yoshito Nishijima
Koji Shinohara
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To control an epitaxial growth in an extremely thin unit to improve an integrity of a semiconductor, by putting respective atomic materials, which compose zincblende-type crystal, in a plurality of evaporative jars and opening/closing shutters, by which these evaporative jars are alternately opened/closed, so that atomic layers are made to alternately grow on a substrate.
CONSTITUTION: Atomic materials 12 and 13 composing A and B crystals are put in respectively evaporative jars 7 and 8. For example, Zn is put in the evaporative jar 7 and S being in the evaporative jar 8. After the whole device is made to be in a vacuum state, the evaporative jars 7 and 8 are heated by outside heaters 14 and 15. A 111-plane substrate 3 on a supporting board 4 is heated at about 300°C by a heater 5 in a state in which its A plane 1 (Zn plane) is exposed. With a shutter 10 being opened, the substrate is exposed to a vapor atmosphere of B atom S. The A plane is easy to attach the B atom to. Besides, after one layer of the B atom is attached so that a B plane 2 is formed, more B atoms are repelled. After formation of the B plane, the shutter 10 is closed and a shutter 9 is opened to expose the substrate to the vapor atmosphere of A atom (Zn). Alternate repetition of the said operation enables zincblende-type crystal to epitaxially grow on an atomic layer level on the substrate.
COPYRIGHT: (C)1987,JPO&Japio
JP28413285A 1985-12-16 1985-12-16 Growing method for atomic layer level zincblende-type crystal and its device Pending JPS62141717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28413285A JPS62141717A (en) 1985-12-16 1985-12-16 Growing method for atomic layer level zincblende-type crystal and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28413285A JPS62141717A (en) 1985-12-16 1985-12-16 Growing method for atomic layer level zincblende-type crystal and its device

Publications (1)

Publication Number Publication Date
JPS62141717A true true JPS62141717A (en) 1987-06-25

Family

ID=17674579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28413285A Pending JPS62141717A (en) 1985-12-16 1985-12-16 Growing method for atomic layer level zincblende-type crystal and its device

Country Status (1)

Country Link
JP (1) JPS62141717A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0297497A (en) * 1988-10-03 1990-04-10 Matsushita Electric Ind Co Ltd Production of cadmium sulfide thin film
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0297497A (en) * 1988-10-03 1990-04-10 Matsushita Electric Ind Co Ltd Production of cadmium sulfide thin film
US7781326B2 (en) 2001-02-02 2010-08-24 Applied Materials, Inc. Formation of a tantalum-nitride layer
US9012334B2 (en) 2001-02-02 2015-04-21 Applied Materials, Inc. Formation of a tantalum-nitride layer

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