JPS6214105B2 - - Google Patents

Info

Publication number
JPS6214105B2
JPS6214105B2 JP56208675A JP20867581A JPS6214105B2 JP S6214105 B2 JPS6214105 B2 JP S6214105B2 JP 56208675 A JP56208675 A JP 56208675A JP 20867581 A JP20867581 A JP 20867581A JP S6214105 B2 JPS6214105 B2 JP S6214105B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
gaas
active
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56208675A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58107679A (ja
Inventor
Takuji Shimanoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56208675A priority Critical patent/JPS58107679A/ja
Publication of JPS58107679A publication Critical patent/JPS58107679A/ja
Publication of JPS6214105B2 publication Critical patent/JPS6214105B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56208675A 1981-12-21 1981-12-21 電界効果トランジスタ Granted JPS58107679A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56208675A JPS58107679A (ja) 1981-12-21 1981-12-21 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56208675A JPS58107679A (ja) 1981-12-21 1981-12-21 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS58107679A JPS58107679A (ja) 1983-06-27
JPS6214105B2 true JPS6214105B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-03-31

Family

ID=16560193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56208675A Granted JPS58107679A (ja) 1981-12-21 1981-12-21 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS58107679A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2606552B1 (fr) * 1986-06-11 1991-08-23 Raytheon Co Composant a semi-conducteur resistant aux rayonnements
JPS6327804A (ja) * 1986-07-22 1988-02-05 Matsushita Electric Ind Co Ltd 半導体装置
JP2534684B2 (ja) * 1986-10-03 1996-09-18 日本電気株式会社 ヘテロ接合バイポ−ラトランジスタ
FR2611300B1 (fr) * 1987-02-20 1989-04-21 Labo Electronique Physique Circuit de stockage d'informations a faible temps d'acces
WO1999026297A1 (en) * 1997-11-17 1999-05-27 The Furukawa Electric Co., Ltd. Epitaxial wafer and compound semiconductor device

Also Published As

Publication number Publication date
JPS58107679A (ja) 1983-06-27

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