JPS62134260U - - Google Patents

Info

Publication number

JPS62134260U

JPS62134260U JP1387986U JP1387986U JPS62134260U JP S62134260 U JPS62134260 U JP S62134260U JP 1387986 U JP1387986 U JP 1387986U JP 1387986 U JP1387986 U JP 1387986U JP S62134260 U JPS62134260 U JP S62134260U

Authority

JP

Japan

Prior art keywords

active layers

gate electrode

field effect

effect transistor

source

Prior art date

1986-01-31

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
• Discuss

• 230000005669 field effect Effects 0.000 claims description 2
• 239000004065 semiconductor Substances 0.000 claims 1
• JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
• 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 1
• 239000000758 substrate Substances 0.000 description 1