JPS62122124A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS62122124A
JPS62122124A JP26289385A JP26289385A JPS62122124A JP S62122124 A JPS62122124 A JP S62122124A JP 26289385 A JP26289385 A JP 26289385A JP 26289385 A JP26289385 A JP 26289385A JP S62122124 A JPS62122124 A JP S62122124A
Authority
JP
Japan
Prior art keywords
film
boron
silicon
bpsg
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26289385A
Inventor
Isao Furuta
Hirotsugu Harada
Shigeru Harada
Katsuhiro Hirata
Masanori Obata
Reiji Tamaki
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP26289385A priority Critical patent/JPS62122124A/en
Publication of JPS62122124A publication Critical patent/JPS62122124A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To reduce Si precipitation generated on the interface between a wiring material and an impurity diffusion layer, and to improve the ohmic contact of the section of the interface by forming a polysilicon thin-film on a boron phosphorus silicate glass (BPSG) film, thermally treating the polysilicon thin-film, accelerating the diffusion of boron into silicon and removing boron.
CONSTITUTION: An silicon oxide film 2 is shaped onto an Si substrate 1, a BPSG film 3 is deposited, a contact hole is formed through etching and an N diffusion layer 4 is shaped to the contact hole section through an ion implantation method, etc. An silicon thin-film 5 is attached to the whole surface of the BPSG film 3 and the contact hole section. Boron in the surface of the BPSG film 3 is diffused into the silicon thin-film through the interface with silicon through heat treatment, thus reducing boron concentration in the surface of the BPSG film 3. Accordingly, the generation of silicon precipitation resulting form the diffusion of boron is inhibited.
COPYRIGHT: (C)1987,JPO&Japio
JP26289385A 1985-11-21 1985-11-21 Manufacture of semiconductor device Pending JPS62122124A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26289385A JPS62122124A (en) 1985-11-21 1985-11-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26289385A JPS62122124A (en) 1985-11-21 1985-11-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS62122124A true JPS62122124A (en) 1987-06-03

Family

ID=17382076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26289385A Pending JPS62122124A (en) 1985-11-21 1985-11-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS62122124A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185294A (en) * 1991-11-22 1993-02-09 International Business Machines Corporation Boron out-diffused surface strap process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185294A (en) * 1991-11-22 1993-02-09 International Business Machines Corporation Boron out-diffused surface strap process

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