JPS62117198A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS62117198A JPS62117198A JP60258376A JP25837685A JPS62117198A JP S62117198 A JPS62117198 A JP S62117198A JP 60258376 A JP60258376 A JP 60258376A JP 25837685 A JP25837685 A JP 25837685A JP S62117198 A JPS62117198 A JP S62117198A
- Authority
- JP
- Japan
- Prior art keywords
- output
- circuit
- constitution
- parity bit
- corrected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000001514 detection method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
Abstract
PURPOSE:To prevent a cycle time from extending even in a DRAM with an ECC circuit by selecting either of the output of a circuit which performs an error detection and correction and that of an encoder adding them, and outputting it to a write amplifier. CONSTITUTION:A parity bit is also corrected with the output of a decoder DEC, and a correct read out output of twelve bits can be obtained. A constitution in such a way makes unnecessary the generation of the parity bit at an encoder ENC, and after a data has been read out, or when a corrected data is written in a refresh operation, the output of an error correction circuit EC can be directly written on a memory cell through as selector SEL and write amplifiers WA1-WA12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60258376A JPS62117198A (en) | 1985-11-18 | 1985-11-18 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60258376A JPS62117198A (en) | 1985-11-18 | 1985-11-18 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62117198A true JPS62117198A (en) | 1987-05-28 |
Family
ID=17319383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60258376A Pending JPS62117198A (en) | 1985-11-18 | 1985-11-18 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62117198A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005017914A1 (en) * | 2003-08-18 | 2005-02-24 | Fujitsu Limited | Semiconductor memory and operation method of semiconductor memory |
US7458004B2 (en) | 2004-04-12 | 2008-11-25 | Nec Electronics Corporation | Semiconductor storage device |
US7692943B2 (en) | 2002-12-27 | 2010-04-06 | Renesas Technology Corp. | Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells |
-
1985
- 1985-11-18 JP JP60258376A patent/JPS62117198A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7692943B2 (en) | 2002-12-27 | 2010-04-06 | Renesas Technology Corp. | Semiconductor memory device layout comprising high impurity well tap areas for supplying well voltages to N wells and P wells |
WO2005017914A1 (en) * | 2003-08-18 | 2005-02-24 | Fujitsu Limited | Semiconductor memory and operation method of semiconductor memory |
US7458004B2 (en) | 2004-04-12 | 2008-11-25 | Nec Electronics Corporation | Semiconductor storage device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS58139399A (en) | Semiconductor storage device | |
JPS62222497A (en) | Semiconductor memory device | |
JPH03248251A (en) | Information processor | |
JPS6151253A (en) | Memory error correctng circuit | |
JPS62117198A (en) | Semiconductor memory device | |
JPS63308800A (en) | Storage device | |
JPH04149899A (en) | Dynamic random access memory | |
JPS567299A (en) | Error correcting circuit | |
JPH02206099A (en) | Dynamic ram | |
JPS60225954A (en) | Storage device | |
JPH04289599A (en) | Nonvolatile memory | |
JPH0383300A (en) | Semiconductor memory | |
JPS63228248A (en) | Plural-error correctable main memory device | |
JPS61261896A (en) | Semiconductor memory device | |
JPS61278100A (en) | Semiconductor memory device | |
JPS59229799A (en) | Memory device | |
JPS5683896A (en) | Memory circuit | |
JPS5870500A (en) | Semiconductor storing circuit | |
JPS60113394A (en) | Error correction system | |
JPS63269233A (en) | Error detecting and correcting circuit | |
JPS61272851A (en) | Storage device | |
JPS57150196A (en) | Storage device | |
JPS60225955A (en) | Storage device | |
JPH02128258A (en) | Error self-correcting memory | |
JPS56169295A (en) | Error retrieval system of information processor |