JPS62107417A - 薄膜磁気ヘツド - Google Patents
薄膜磁気ヘツドInfo
- Publication number
- JPS62107417A JPS62107417A JP24655685A JP24655685A JPS62107417A JP S62107417 A JPS62107417 A JP S62107417A JP 24655685 A JP24655685 A JP 24655685A JP 24655685 A JP24655685 A JP 24655685A JP S62107417 A JPS62107417 A JP S62107417A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- layer
- thin film
- pole piece
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 241
- 239000010409 thin film Substances 0.000 title claims abstract description 80
- 239000010408 film Substances 0.000 claims abstract description 51
- 230000035699 permeability Effects 0.000 claims abstract description 25
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 27
- 229910000702 sendust Inorganic materials 0.000 claims description 9
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000004907 flux Effects 0.000 abstract description 10
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 88
- 239000011241 protective layer Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000000059 patterning Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24655685A JPS62107417A (ja) | 1985-11-01 | 1985-11-01 | 薄膜磁気ヘツド |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24655685A JPS62107417A (ja) | 1985-11-01 | 1985-11-01 | 薄膜磁気ヘツド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62107417A true JPS62107417A (ja) | 1987-05-18 |
| JPH0468683B2 JPH0468683B2 (enrdf_load_stackoverflow) | 1992-11-04 |
Family
ID=17150169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24655685A Granted JPS62107417A (ja) | 1985-11-01 | 1985-11-01 | 薄膜磁気ヘツド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62107417A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487007A (ja) * | 1990-07-30 | 1992-03-19 | Victor Co Of Japan Ltd | 薄膜磁気ヘッド |
-
1985
- 1985-11-01 JP JP24655685A patent/JPS62107417A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487007A (ja) * | 1990-07-30 | 1992-03-19 | Victor Co Of Japan Ltd | 薄膜磁気ヘッド |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0468683B2 (enrdf_load_stackoverflow) | 1992-11-04 |
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